Sony Corporation

Sony Semiconductor Solutions Corporation

Sony Group Corporation

Keiichi Maeda

Mitsuru Taguchi

Takashi Sakairi

Koichi Amari

Kazuhide Koyama

Hirofumi Sumi

Teruo Hirayama

Kyoko Izuha

Kazuhiro Hoshino

Naoki Komai

Tsuyoshi Okazaki

Tadayuki Dofuku

Toshiharu Suzuki

Yukiyasu Sugano

Hidenori Kenmotsu

Kunihiko Hikichi

Tomoaki Honda

Yasuhiro Chiba

Kazuhiro Tamura

Takuma Matsuno

Yosuke Takita

Yuu Kawaguchi

Tatsuji Oda

Hideki Kawaguchi

Seiya Haraguchi

Takayoshi Masaki

Atsushi Tanaka

Toshiaki Okada

Kouta Fukumoto

Chiho Araki

Yuuji Adachi

Hitori Tanigawa

Katsumi Kouno

Takuya Fujino

Hiroshi Suzawa

Katsunori Dai

Shunsuke Narui

An electrode structure includes: a plurality of pixel electrodes arranged separately from each other; and a plurality of dielectric layers laminated in a first direction with respect to the plurality of pixel electrodes, in which the plurality of dielectric layers includes: a first dielectric layer that spreads over the plurality of pixel electrodes in a direction intersecting with the first direction; and a second dielectric layer that includes dielectric material having a refractive index higher than that of the first dielectric layer, sandwiches the first dielectric layer together with the plurality of pixel electrodes, and has a slit at a position overlapping space between pixel electrodes adjacent when viewed from the first direction.

Electrode structure, liquid crystal display device, projective display device, and method of manufacturing electrode structure

[Object] To provide a display device, a method for producing a display device, and a display apparatus of projection type, which are capable of suppressing deterioration of image quality attributable to a depressed space between pixel electrodes. [Solving Means] A display device of the present disclosure includes pixel electrodes formed for individual pixels and an insulating film for insulation between the pixel electrodes. The insulating film is so formed as to protrude from an electrode surface between the pixel electrodes. A display apparatus of projection type of the present disclosure uses the display device of the present disclosure as a light modulator to module light from a light source. A method for producing a display device of the present disclosure having pixel electrodes formed for individual pixels and an insulating film for insulation between the pixel electrodes includes forming the insulating film as to protrude between the pixel electrodes.

Display device, method for producing display device, and display apparatus of projection type

A liquid crystal display unit of the present disclosure has a liquid crystal panel having a pixel region including a plurality of pixels, and the liquid crystal panel includes: a first substrate on which a plurality of pixel electrodes having light reflectivity are provided for each of the pixels; a second substrate disposed in opposition to the first substrate; a liquid crystal layer disposed between the first substrate and the second substrate; and an interlayer film provided between the first substrate and the liquid crystal layer, and the interlayer film has a plurality of sloped sections each including at least a portion facing a corresponding one of the plurality of pixel electrodes, and the plurality of sloped sections each have a slope width that faces the corresponding one of the plurality of pixel electrodes and that differs from one another.

Liquid crystal display unit and projection display unit

A solid-state imaging device includes an imaging element and a logic element. The imaging element includes a first semiconductor substrate, a first wiring layer, and a first metal layer, in which a pixel region which is a light sensing surface is formed. The logic element includes a second semiconductor substrate, a second wiring layer, and a second metal layer, in which a signal processing circuit that processes a pixel signal obtained at the pixel region is formed. The logic element is laminated to the imaging element so that the first metal layer and the second metal layer are bonded to each other, and the first metal layer and the second metal layer are formed on a region excluding a region in which a penetrating electrode layer penetrating a bonding surface of the imaging element and the logic element is formed.

Solid-state imaging device, semiconductor device, manufacturing methods thereof, and electronic apparatus

A film thickness prediction method of predicting a film thickness of a second processed layer after planarization includes the steps of: creating first to third actual measurement databases; obtaining a reference film thickness of a second processed layer formed on a region in which no circuit pattern exists; segmenting a first processed layer to be formed on a substrate into grid-like meshes, and obtaining a pattern area ratio occupied by a circuit pattern to be formed on a first processed layer in each mesh and further obtaining a circumferential length of the circuit pattern in each mesh; obtaining an initial thickness of the second processed layer in each mesh; and predicting the film thickness of the second processed layer after planarization from an initial film thickness predicted value and an amount of planarization Hof the second processed layer in the mesh.

Film thickness prediction method, layout design method, mask pattern design method of exposure mask, and fabrication method of semiconductor integrated circuit

Disclosed is a magnetron sputtering system enabling formation of a film of a ferroelectric substance by suppressing occurrence of a magnetic field due to an eddy current. The magnetron sputtering system includes a flat target; magnetic field applying means (magnets), provided in the vicinity of a back surface of the target, for applying a magnetic field to a front surface of the target; and magnetic field rotating means (motor) for rotating the magnetic field applying means so as to rotate the magnetic field applied to the front surface of the target. The magnetic field rotating means is provided with rotational speed varying means (speed controller) for varying the rotational speed of the magnetic field applied by the magnetic field rotating means.

Method for fabricating a semiconductor device in a magnetron sputtering system

A method of forming wirings which comprises forming a film of a silicon-containing metal layer at a high temperature on an underlying metals, thereby forming a silicon alloy layer comprising the underlying metal and the silicon-containing metal during film formation. In a case of forming wirings by a silicon-containing metal layer occurrence of Si nodules can be eliminated to obtain wirings of high reliability.

Method of forming wirings

An apparatus and a method for electroplating for forming a metal film by an electroplating method. The apparatus comprises a plating bath provided in a non-oxidative atmosphere, and in the method, an article to be plated is immersed in a plating bath through a non-oxidative atmosphere.

Apparatus and method for electroplating

A method of forming wirings which includes forming a film of a silicon-containing metal layer at a high temperature on an underlying metal, thereby forming a silicon alloy layer which includes the underlying metal and the silicon-containing metal during film formation. In a case of forming wirings by a silicon-containing metal layer, occurrence of Si nodules can be eliminated to obtain wirings of high reliability.

In a method for making a multilayer wiring structure, a second insulating film having an etching rate slower than a first insulating film is provided on the first insulating film covering a wiring pattern; an opening is formed in the second insulating film in a portion corresponding to a connecting hole to be formed afterwards; a third insulating film having an etching rate faster than the second insulating film is provided on the opening and the second insulating film; a groove is formed, so as to expose the opening, in the third insulating film in a portion where an upper-layer wiring pattern is formed, and the connecting hole reaching the wiring pattern is formed; and a connecting plug is formed by packing a conductive material in the connecting hole, and the upper-layer wiring pattern is formed by packing a conductive material in the groove.

Method for making multilayer wiring structure

The present invention provides a process for fabricating a connection structure comprising a anti-reaction layer having excellent barrier properties and having improved ohmic characteristics with respect to the semiconductor substrate. Accordingly, the present invention comprises forming a first anti-reaction layer by temporarily ceasing the film deposition, and then initiating the film deposition again to form a second anti-reaction layer on the surface of the previously deposited first anti-reaction layer. A heat treatment can be applied to the structure after depositing a anti-reaction layer.

Process for fabricating connection structures

A multilayer interconnect structure for a semiconductor device. The structure comprises a lower patterned metallization layer, a higher patterned metallization layer, and filled holes for electrically interconnecting these two layers. The two metallization layers are formed out of aluminum or an aluminum alloy by high-temperature aluminum sputtering or aluminum reflow techniques. A suction-preventing layer is formed either at the bottoms of the contact holes or on the surface of the lower metallization layer to prevent the material of the lower metallization layer from being sucked into the overlying contact holes.

Multilayer interconnect structure for semiconductor device and method of

A method for forming an interconnect film (of aluminum or aluminum alloy) by high-temperature sputtering such that the resulting film has a flat surface. The flat surface is desirable for the multilayer interconnect structure, relieves the resist film from halation at the time of exposure, and makes the interconnect immune to electromigration. An interconnect for semiconductor devices which is fabricated from an underlying film, with crystals therein orienting in the direction perpendicular to the substrate surface, and an interconnect film formed on the underlying film, with crystals therein orienting in alignment with the orientation of crystals in the underlying film and in the direction perpendicular to the substrate surface. The underlying film may be a titanium film with its (002), (001), or (011) crystal plane orienting in the direction perpendicular to the substrate surface. The interconnect film may be an aluminum film or aluminum alloy film with its (111) crystal plane orienting in alignment with the orientation of crystals in the titanium film and in the direction perpendicular to the substrate surface.

Interconnect for semiconductor devices and method for fabricating same

A method for forming an interconnect film (of aluminum or aluminum alloy) by high-temperature sputtering such that the resulting film has a flat surface. The flat surface is desirable for the multilayer interconnect structure, relieves the resist film from halation at the time of exposure, and makes the interconnect immune to electromigration. The interconnect for semiconductor devices is fabricated from an underlying film, with crystals therein orienting in the direction perpendicular to the substrate surface, and an interconnect film formed on the underlying film, with crystals therein orienting in alignment with the orientation of crystals in the underlying film and in the direction perpendicular to the substrate surface. The underlying film may be a titanium film with its (002), (001), or (011) ) crystal plane orienting in the direction perpendicular to the substrate surface. The interconnect film may be an aluminum film or aluminum alloy film with its (111) crystal plane orienting in alignment with the orientation of crystals in the titanium film and in the direction perpendicular to the substrate surface.

Growing community of inventors

Kanagawa, Japan

Keiichi Maeda