Nippon Micrometal Corporation

Nippon Steel Materials Co., Ltd.

Nippon Steel Corporation

Nippon Steel & Sumikin Materials Co., Ltd.

Nippon Steel & Sumitomo Metal Corporation

Nippon Steel Chemical & Material Co., Ltd.

Ichikawa Co., Ltd.

Nippon Steel & Sumikin Chemical Co., Ltd.

Centre National De La Recherche Scientifique

The Foundation for the Promotion of Industrial Science

Keiichi Kimura

Tomohiro Uno

Takashi Yamada

Shinichi Terashima

Akihito Nishibayashi

Yutaka Sato

Masamoto Tanaka

Keisuke Tokuhashi

Takuya Hiraga

Yuji Kuma

Masahiro Fukuda

Wataru Ohashi

Mitsuru Morita

Yasuyuki Sakai

Seiki Takebayashi

Mitsuharu Yonemura

Kiyoshi Sawano

Misao Hashimoto

Katsuyoshi Miyamoto

Atsushi Miyajima

Koichi Hattori

Naoya Kuwasaki

Kagehito Nishibayashi

Katuyoshi Miyamoto

Taketomo Kido

Kazuaki Kaneko

Yuuki Yoshida

Eric Leclerc

Stainless steel foil with improved durability to repeated bending under the extreme bending conditions demanded of foldable displays and rollable displays. This stainless steel foil is flexible stainless steel foil comprising rolled stainless steel foil with a thickness of 0.1 mm or less, having a tensile strength of 1,800 MPa or more, and having a maximum height roughness of Rz of 0.35 μm or less obtained from a roughness curve of the stainless steel foil surface as measured in the same direction as a tensile direction.

Flexible stainless steel foil and flexible light emitting device

An austenitic stainless steel foil according to this disclosure consists of, in mass %, C: 0.150% or less, Si: 1.00% or less, Mn: 2.00% or less, P: 0.045% or less, S: 0.0300% or less, Cr: 16.00 to 20.00%, Ni: 6.00 to 10.50%, N: 0.100% or less, Mo: 0 to 2.50%, Nb: 0 to 0.12%, V: 0 to 1.00%, Ta: 0 to 0.50%, Hf: 0 to 0.10%, Co: 0 to 0.50%, B: 0 to 0.0100%, Ca: 0 to 0.0200%, Mg: 0 to 0.0200%, rare earth metal: 0 to 0.0100%, Al: 0 to 0.010%, Ti: 0 to 0.500%, Zr: 0 to 0.100%, and Cu: 0 to 3.00%, with the balance being Fe and impurities. In an X-ray diffraction profile obtained using CuKα radiation, a full width at half maximum Fw of a peak of a {111} plane is greater than 0.366°.

Austenitic stainless steel foil

The present invention provides a ceramic laminate having excellent mechanical properties, heat dissipation property, insulating property, heat resistance and anti-reactivity, and particularly an insulative heat dissipating body having an excellent thermal cycle reliability and a high withstand voltage. The ceramic laminateaccording to the present invention is a ceramic laminate in which a ceramic filmis formed on a metal layer, wherein the ceramic filmhas a minimum film thickness of 1 &#x3bc;m or more, contains silicon nitride and inevitable impurities, and has silicon nitride crystal grains having an average grain size of 300 nm or less in the film thickness direction and an average grain size of 500 nm or less in the in-plane direction. As a result, the present invention can provide a ceramic laminate having excellent mechanical properties, heat dissipation property, insulating property, heat resistance and anti-reactivity, and particularly an insulative heat dissipating body having an excellent thermal cycle reliability and a high withstand voltage.

Ceramic laminate

A ceramic laminate improving the mechanical characteristics of a composite ceramic layer which has excellent thermal fatigue resistance, thermal conductivity, and insulation ability and having excellent durability and heat dissipation and insulation ability and a ceramic insulating substrate and a method of production of a ceramic laminate are provided. In a cross-section perpendicular to the bonding interfaces, the average size of the second phase particlesis 0.02 &#x3bc;m to 0.3 &#x3bc;m and the average value of the ratio of the long axis and short axis of an equivalent ellipse when viewing a second phase particleas an ellipse is 2 to 10. Further, 60% or more of the number of the second phase particleshas an orientation angle of 30&#xb0; or less while the average orientation angle is 5&#xb0; to 35&#xb0;.

Ceramic laminate, ceramic insulating substrate, and method for manufacturing ceramic laminate

According to this invention, an oriented copper plate which has a highly developed cube texture and has strength and breaking elongation greater than those of a conventional material having a cube texture, a copper-clad laminate, a flexible circuit board that is excellent in terms of folding flexibility, and an electronic device are provided, and a process for producing the oriented copper plate is established. This invention relates: an oriented copper plate, which contains 0.03% by mass to 1.0% by mass of Cr, the remainder of which is composed of copper and inevitable impurities, wherein the copper plate has a &#x3c;100&#x3e; main orientation so that the area percentage of a &#x3c;100&#x3e; preferred orientation region is not less than 60.0%, the region satisfying a condition that allows each of a thickness direction of the copper plate and a specific in-plane direction of the copper plate to have an orientation difference of not more than 15&#xb0; with respect to a &#x3c;100&#x3e; basic copper crystal axis of unit lattice of copper, and wherein Cr precipitates having equivalent circle diameters of 4 nm to 52 nm are present at 300 precipitates/&#x3bc;mto 12000 precipitates/&#x3bc;m; a copper-clad laminate and a flexible circuit board using the copper plate; and an electronic devices equipped with the flexible circuit board.

Oriented copper plate, copper-clad laminate, flexible circuit board, and electronic device

A metal tape material contains a metal having face centered cubic lattice structure, in which metal tape material an area fraction Aof a preferentially &#x3c;100&#x3e;oriented region are within an orientation difference of 15&#xb0; C. relative to a thickness direction of the metal tape material and further within an orientation difference of 15&#xb0; C. relative to a first in-plane direction of the metal tape material is 60% or greater and not greater than 100%, and, where an area fraction of a preferentially &#x3c;212&#x3e;oriented region are within an orientation difference of 15&#xb0; relative to the thickness direction and further within an orientation difference of 15&#xb0; relative to the first in-plane direction is defined as A, the total of the area fraction of the preferentially &#x3c;212&#x3e;oriented region and the area fraction of the preferentially &#x3c;100&#x3e;oriented region, A+A, is greater than 70% and not greater than 100%.

Metal tape material and interconnector for solar module current collection

It is an object of the present invention to provide a copper-based bonding wire whose material cost is low, having excellent ball bondability, reliability in a heat cycle test or reflow test, and storage life, enabling an application to thinning of a wire used for fine pitch connection. The bonding wire includes a core material having copper as a main component and an outer layer which is provided on the core material and contains a metal M and copper, in which the metal M differs from the core material in one or both of components and composition. The outer layer is 0.021 to 0.12 &#x3bc;m in thickness.

Bonding wire for semiconductor device

Provided are a flexible circuit board with excellent bendability and durability against hard conditions particularly in a repeated bend portion having a small curvature radius, and a method of producing the same. The flexible circuit board includes a resin layer and a wiring formed of a metal foil and is used with a bend portion provided at least one position of the wiring. The metal foil is made of a metal having a cubic crystal structure, and a cross section of the wiring cut in a thickness direction from a ridge line in the bend portion forms a principal orientation on any one of planes within a range of (20 1 0) to (1 20 0) in a rotation direction from (100) to (110) with [001] set as a zone axis. The wiring is formed so that the metal foil is made of a metal having a cubic crystal structure, and that the ridge line in the bend portion has an angle in a range of 2.9&#xb0; to 87.1&#xb0; relative to one of fundamental crystal axes &#x3c;100&#x3e; in a surface of the metal foil.

Flexible circuit board and method for producing same and bend structure of flexible circuit board

The present invention provides a semiconductor-device copper-alloy bonding wire which has an inexpensive material cost, ensures a superior ball joining shape, wire joining characteristic, and the like, and a good loop formation characteristic, and a superior mass productivity. The semiconductor-device copper-alloy bonding wire contains at least one of Mg and P in total of 10 to 700 mass ppm, and oxygen within a range from 6 to 30 mass ppm.

Copper alloy bonding wire for semiconductor device

A gold wire for semiconductor element connection having high strength and bondability. The connection has a limited amount of at least one element selected from calcium and rare earth elements, and a limited amount of at least one element selected from a group consisting of titanium, vanadium, chromium, hafnium, niobium, tungsten, and zirconium. The incorporation of a suitable amount of palladium or beryllium is preferred. The incorporation of calcium and rare earth element can improve the strength and young's modulus of a gold wire, and the incorporation of titanium and the like can reduce a deterioration in the roundness of press-bonded shape of press-bonded balls in the first bonding caused by the incorporation of calcium and rare earth elements. The bonding wire can simultaneously realize mechanical properties and bondability capable of meeting a demand for a size reduction in semiconductor and a reduction in electrode pad pitch.

Gold wire for semiconductor element connection

A bonding wire for semiconductor devices includes a core member formed of an electrically-conductive metal, and a skin layer mainly composed of a face-centered cubic metal different from the core member and formed thereon. An orientation ratio of &#x3c;100&#x3e; orientations in crystalline orientations &#x3c;hkl&#x3e; in a wire lengthwise direction at a crystal face of a surface of the skin layer is greater than or equal to 50%, and the &#x3c;100&#x3e; orientations have an angular difference relative to the wire lengthwise direction. The angular difference is within 15 degrees.

Bonding wire for semiconductor devices

A semiconductor-device bonding wire includes a core member formed of an electrically-conductive metal, and a skin layer mainly composed of a face-centered cubic metal different from the core member and formed thereon. An orientation ratio of &#x3c;111&#x3e; orientations in crystalline orientations &#x3c;hkl&#x3e; in a wire lengthwise direction at a crystal face of a surface of the skin layer is greater than or equal to 50%, and the &#x3c;111&#x3e; orientations have an angular difference relative to the wire lengthwise direction, the angular difference being within 15 degrees.

Provided is a bonding structure of a bonding wire and a method for forming the same which can solve problems of conventional technologies in practical application of a multilayer copper wire, improve the formability and bonding characteristic of a ball portion, improve the bonding strength of wedge connection, and have a superior industrial productivity. A bonding wire mainly composed of copper, and a concentrated layer where the concentration of a conductive metal other than copper is high is formed at a ball bonded portion. The concentrated layer is formed in the vicinity of the ball bonded portion or at the interface thereof. An area where the concentration of the conductive metal is 0.05 to 20 mol % has a thickness greater than or equal to 0.1 &#x3bc;m, and it is preferable that the concentration of the conductive metal in the concentrated layer should be five times as much as the average concentration of the conductive metal at the ball bonded portion other than the concentrated layer.

Growing community of inventors

Tokyo, Japan

Keiichi Kimura