Matsushita Electric Industrial Co., Ltd.

Mitsui Minings & Melting Co., Ltd.

Atect Corporation

Matsushita Electric Indus. Co. Ltd.

Keiichi Kagawa

Kiyoyuki Morita

Takashi Uehara

Akihira Shinohara

Akio Miyajima

Hiroshi Matsuda

Takeshi Ishihara

Mototsugu Ogura

Kanji Takata

Akira Miura

Yuichi Hirofuji

Toyohide Uemura

Ryoji Okazaki

Akira Oyama

Yusuke Tanaka

Yohei Sone

Hirotada Tanimoto

Mitsuo Shinoda

Kiyoshi Taniyasu

Norio Kotaka

Yoshiaki Tanino

Kouji Morita

Yoshitaka Fukushima

Makoto Matsuo

Seiji Fuchino

Provided is an alumina sintered body which has a high heat conductivity and a high infrared ray emissivity and is excellent in electrical insulation property and chemical resistance. An alumina sintered body contains cubic aluminum nitride.

Alumina sintered body and method for producing same

Zinc alloy powder for alkaline batteries containing Bi at a rate of 0.01-0.1% by weight, In at a rate of 0.01-0.1% by weight, Mg at a rate of 0.0005-0.03 % by weight and unavoidable impurities, such as Pb, Cd and Cu, capable of improving high-rate performance and being suitable for using as a cathode active substance for alkaline batteries is provided.

Zinc alloy powder and alkaline battery using the same

An ion implantation stopper is formed on a gate electrode extending on a substrate. When ions are implanted into the substrate to form an LDD layer or source and drain regions in the substrate, the stopper functions to prevent the gate electrode from being exposed to ion implantation. The prevention of the exposure of the gate electrode to the ion implantation ensures the prevention of channeling in the gate electrode. The invention includes forming a first protective film on the gate of an NMOS, implanting to form LDD region for the NMOS, implanting to form source and drain regions of a PMOS, forming a second protective film on the gate of the NMOS, implanting to form source and drain regions of the NMOS, the first and second protective films prevent the gate electrode of the NMOS from being exposed to ion implantation during the respective implanting steps so that channeling is prevented from occurring in the gate electrode of the NMOS.

Method of fabricating a CMOS semiconductor devices

Semiconductors are treated with such surface-treating solutions as ultra-pure water, dilute hydrofluoric acid and an organic solvent and then subjected to removal of the surface-treating solutions remaining on the surface of the semiconductor in an inert gas atmosphere of high purity while contacting the surface of the surface-treated semiconductor only with the inert gas of high purity, whereby contamination with impurities on atom level from the atmosphere can be prevented.

Process for treating semiconductors

An ion implantation stopper is formed on a gate electrode extending on a substrate. When ions are implanted into the substrate to form an LDD layer or source and drain regions in the substrate, the stopper functions to prevent the gate electrode from being exposed to ion implantation. The prevention of the exposure of the gate electrode to the ion implantation ensures the prevention of channeling in the gate electrode.

Method of fabricating a CMOS semiconductor device

This invention uses as the anode active material a zinc alloy containing Ni, at least one element selected from In, Pb, Ga and Cd and, optionally further, one element selected from Al, Mg, Ca, Ba and Sr for the anode of a conventional zinc-alkaline battery which employs zinc as the anode active material, aqueous alkaline solution as the electrolyte, and manganese dioxide, silver oxide, oxygen and so forth as the cathode active material. The use of such zinc alloy permits the reduction of the amount of mercury to be used for amalgamation of the anode zinc surface which is made for the purpose of corrosion inhibition, thereby enabling the provision of a low-pollution zinc-alkaline battery.

Zinc-alkaline battery

An anode active material of zinc powder with indium coexisting therewith, the metals being amalgamated, an alkaline cell using the anode active material therein, and a method for the production of the anode active material or the alkaline cell.

Anode active material and alkaline cells containing same, and method for

A method of masking semiconductor devices provided with selectively formed oxide film patterns, can be made by very precisely copying from selective oxidation mask patterns. The method in accordance with the present invention comprises

Method of making semiconductor devices

Growing community of inventors

Osaka, Japan

Keiichi Kagawa