Japan Pionics Co., Ltd.

Mitsubishi Gas Chemical Company, Inc.

Japan Pionics., Ltd.

Keiichi Iwata

Takashi Shimada

Noboru Akita

Toshiya Hatakeyama

Koichi Kitahara

Yasuo Tanaka

Morio Gaku

Tetsuo Aoyama

Kenichi Nakamura

Ryuji Hasemi

Hidetoshi Ikeda

Tetsuya Karita

Katsuji Komatsu

Mayumi Hada

Ken-ichi Shimizu

Kazushi Gouroku

Nobuyuk Ikeguchi

Masako Yasuda

Process for producing a high-density printed wiring board, comprising:

Process for the production of high-density printed wiring board

Developing solution for a photoresist comprising an alicyclic amine compound and a non-metallic alkali compound is described. The developing solution exhibits excellent wettability and dissolution selectivity to alicyclic compound-based resists. Also, the developing solution does not produce dissolution residues, and it makes it possible to reliably form ultra fine patterns.

Developing solution for a photoresist and a method for developing the photoresist

A removing agent composition for a photoresist comprising 0.01 to 20% by weight of a quaternary ammonium hydroxide, 1 to 80% by weight of a nucleophilic amine having an oxidation-reduction potential, 0.5 to 20% by weight of a sugar and/or a sugar alcohol, and water in the remaining amount; and a process for producing a semiconductor integrated circuit comprising removing a photoresist applied onto an inorganic substrate by using the above removing agent composition. A layer of a photoresist applied onto an inorganic substrate, a layer of a photoresist remaining after dry etching of an inorganic substrate which is masked by the layer, or residues of a layer of a photoresist remaining after dry etching of an inorganic substrate which is masked by the layer and subsequent ashing of the layer can easily be removed at a low temperature in a short time. The wiring material of the circuit is not corroded at all, and ultra-fine working can be performed.

Removing agent composition for a photoresist and process for producing a

There is disclosed a process for cleaning a harmful gas which comprises bringing a harmful gaseous halogenide such as chlorine, hydrogen chloride, dichlorosilane, silicon tetrachloride, phosphorus trichloride, chlorine trifluoride, boron trichloride, boron trifluoride, tungsten hexafluoride, silicon tetrafluoride, fluorine, hydrogen fluoride and hydrogen bromide into contact with a cleaning agent comprising zinc oxide, aluminum oxide and an alkali compound to remove the above halogenide. The above process is extremely effective for promptly and efficiently removing the above gaseous halogenide that is contained in the gas discharged from semiconductor manufacturing process.

Process for cleaning harmful gas

A removing agent composition for a photoresist is disclosed which comprises 5 to 50% by weight of an alkanolamine, an alkoxyalkylamine or an alkoxyalkanolamine, 1 to 30% by weight of a glycol monoalkyl ether, 0.5 to 15% by weight of a sugar or a sugaralcohol, 0.01 to 10% by weight of a quaternary ammonium hydroxide, if necessary, and water as the balance; and a method of removing by the use of this composition is also disclosed herein. According to the present invention, there can be provided the removing agent composition for the photoresist which can easily remove, at a low temperature in a short time, a photoresist film applied onto an inorganic substrate in a manufacturing process of semiconductor integrated patterns, a remaining photoresist layer after dry etching or a remaining photoresist residue after ashing and which does not corrode a wiring material at all and which can be rinsed with water alone.

Removing agent composition for photoresist and method of removing

There is disclosed a process for purification a gaseous organometallic compound containing impurities by bringing the compound into contact with a catalyst comprising a copper or nickel component as the essential ingredient to remove oxygen contained in the compound. The above-mentioned process is capable removal of oxygen in an organometallic compound as low as 0.1 ppm and further to a ultralow concentration of 0.01 ppm, which removal has heretofore been impossible, and thereby the production of a ultrapure organometallic compound has been made possible.

Process for purification of gaseous organometallic compound

There is disclosed a process for cleaning a gas containing a nitrogen fluoride especially nitrogen trifluoride as the harmful component which comprises bringing the gas into contact with a cleaning agent comprising zirconium or a zirconium-based alloy such as Zr-Fe, Zr-Cu, Zr-Ni, Zr-Al, Zr-Mg, Zr-Ca, Zr-Zn, Zr-La and Zr-Ce to remove the harmful component at 100.degree. to 800.degree. C., especially 150.degree. to 500.degree. C. The process is capable of efficiently removing nitrogen fluoride, especially nitrogen trifluoride at a relatively low temperature without generating a harmful byproduct such as nitrogen oxide, and thus exhibits excellent effect on the cleaning of exhaust gas from semiconductor manufacturing process, etc.

There is disclosed a process for cleaning a harmful gas which comprises bringing a harmful gaseous halogenide such as chlorine, hydrogen chloride, dichlorosilane, silicon tetrachloride, phosphorus trichloride, chlorine trifluoride, boron trichloride, boron trifluoride, tungsten hexafluoride, silicon tetrafluoride, fluorine, hydrogen fluoride and hydrogen bromide into contact with a cleaning agent comprising zinc oxide, aluminum oxide and an alkali compound to remove the above halogenide. The above process is extremely effective for promptly and efficiently removing the above gaseous halogenide that is contained in the gas discharged from semiconductor manufacturing process or leaked suddenly from a gas bomb in an emergency.

A method for purifying a gaseous hydride, which comprises bringing a crude gaseous hydride into contact with at least one material selected from copper arsenides, copper phosphides, copper silicides, copper selenides, copper borides or copper sulfides to remove oxygen contained in the crude gaseous hydride.

Method for purifying gaseous hydrides

A method for purifying a gaseous hydride, which comprises bringing a crude gaseous hydride into contact with at least one material from nickel arsenides, nickel phosphides, nickel silicides, nickel selenides, or nickel borides to remove oxygen contained in the crude gaseous hydride.

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Hiratsuka, Japan

Keiichi Iwata