Fuji Electric Co., Ltd.

Keiichi Higuchi

Shin Soyano

Takahiro Koyama

Hayato Nakano

Yoshikazu Takamiya

Akihiro Osawa

Hiromichi Gohara

Akira Morozumi

Yoshikazu Takayima

A semiconductor assembly is provided, that includes a semiconductor chip including an upper surface electrode and a lower surface electrode opposite to the upper surface electrode, a metallic wiring plate electrically connected to the semiconductor chip, and a soldering portion that bonds the upper surface electrode of the semiconductor chip to the metallic wiring plate by soldering, the semiconductor chip including a temperature detection portion, an anode wire for the temperature detection portion, and a first insulation layer that blocks the soldering portion and insulates the soldering portion from the anode wire. A deterioration detection method for a semiconductor module is provided, that includes a semiconductor assembly, the deterioration detection method including monitoring a temperature of a temperature detection portion disposed in a semiconductor chip, and detecting a temperature anomaly based on short circuit of an anode wire disposed in the semiconductor chip to detect deterioration of the semiconductor module.

Semiconductor assembly and deterioration detection method

A semiconductor module includes: a first lead frame connected to a plurality of semiconductor chips in a first arm circuit; a second lead frame connected to a plurality of semiconductor chips in a second arm circuit; a first main terminal connected to the first lead frame; and a second main terminal connected to the second lead frame, wherein each of the first lead frame and second lead frame has a facing part, a first terminal connection portion connected to the first main terminal is provided at a first end portion of the first lead frame, a second terminal connection portion connected to the second main terminal is provided at a second end portion of the second lead frame, and the first terminal connection portion and second terminal connection portion are arranged on opposite sides when viewed from the facing parts of the first lead frame and second lead frame.

Semiconductor module, electric automobile and power control unit

A reverse-conducting semiconductor device includes a semiconductor chip having a top surface, a first side and a second side orthogonal to the first side in a plan view, in which a plurality of transistor regions and a plurality of diode regions are alternately arranged and an upper-electrode is provided on top surface-sides of the transistor regions and the diode regions; and a wiring member having a flat-plate portion having a rectangular-shape which is metallurgically jointed to the upper-electrode via a joint member above the diode regions. The wiring member has a conductive wall rising from a bending edge of the flat-plate portion in a direction opposite to the upper-electrode, and the bending edge of the flat-plate portion is arranged parallel to the first side.

Reverse-conducting insulated gate bipolar transistor

Semiconductor module

A semiconductor module including a cooling unit by which a fine cooling effect is obtained is provided. A plurality of cooling flow paths () which communicate with both of a refrigerant introduction flow path which extends from a refrigerant introduction inlet and a refrigerant discharge flow path which extends to a refrigerant discharge outlet are arranged in parallel with one another in a cooling unit (). Fins () are arranged in each cooling flow path (). Semiconductor elements () and () are arranged over the cooling unit () so that the semiconductor elements () and () are thermally connected to the fins (). By doing so, a semiconductor module () is formed. Heat generated by the semiconductor elements () and () is conducted to the fins () arranged in each cooling flow path () and is removed by a refrigerant which flows along each cooling flow path ().

Growing community of inventors

Matsumoto, Japan

Keiichi Higuchi