Nec Corporation

Keiichi Harashima

Takeshi Akimoto

A method of treatment of a freon gas consisting only of carbon and fluorine is provided, wherein the freon gas is exposed to a plasma to decompose and chemically activate the freon gas. The freon gas having been chemically activated is then made into contact with a reactant to form a reaction product.

Method and apparatus for treatment of freon gas

A method of treatment of a fleon gas consisting only of carbon and fluorine is provided, wherein the fleon gas is exposed to a plasma to decompose and chemically activate the fleon gas. The fleon gas having been chemically activated is then made into contact with a reactant to form a reaction product.

An electrostatic chuck applicable to, e.g., an epitaxial apparatus or an etching apparatus for electrostatically chucking a semiconductor substrate or wafer is disclosed. The chuck includes a stage for electrostatically retaining the wafer thereon. A plurality of lift pins are elevatable to thrust up the wafer. A plurality of release pins are arranged on the stage for thrusting up the peripheral portion of the wafer. A plurality of drive mechanisms respectively thrust up the release pins stepwise within the allowable elastic deformation range of the wafer. A control device selectively actuates the release pins via the associated drive mechanisms.

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Tokyo, Japan

Keiichi Harashima