Shin-etsu Chemical Co., Ltd.

Keiichi Goto

Makoto Kawai

Kazuyoshi Tamura

Yoshihiro Kubota

Toshimi Kobayashi

There is disclosed a silicon focus ring consisting of silicon single crystal used as a silicon focus ring in a plasma apparatus, wherein concentration of interstitial oxygen contained in the silicon focus ring is not less than 5&times;10 atoms/cm and not more than 1.5&times;10 atoms/cm , and a producing method for a silicon focus ring used for a plasma apparatus, wherein a single crystal silicon wherein concentration of interstitial oxygen contained in the silicon focus ring is not less than 5&times;10 atoms/cm and not more than 1.5&times;10 atoms/cm is grown by a Czochralski method, the single crystal silicon is processed in a circle, and a silicon focus ring is produced. There can be provided a silicon focus ring, which can prevent disadvantage due to impurities such as heavy metal.

Silicon focus ring and method for producing the same

There is disclosed a silicon electrode plate including silicon single crystal used as an upper electrode in a plasma etching apparatus wherein concentration of interstitial oxygen contained in the silicon electrode plate is not less than 5&times;10 atoms/cm and not more than 1.5&times;10 atoms/cm , and the silicon electrode plate wherein nitrogen concentration in the silicon electrode plate is not less than 5&times;10 atoms/cm and not more than 5&times;10 atoms/cm . There can be provided a silicon electrode plate consisting of silicon single crystal used as an upper electrode in a plasma etching apparatus wherein problems due to adhesion of impurities such as heavy metal or the like can be prevented.

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Annaka, Japan

Keiichi Goto