Fujikoshi Machinery Corp.

Shinshu University

Chichibu Cement Co., Ltd.

Kyocera Corporation

Novel Crystal Technology, Inc.

Keigo Hoshikawa

Takumi Kobayashi

Toshinori Taishi

Yoshio Otsuka

Etsuko Ohba

Tsuguo Fukuda

Hiroshi Machida

Akeo Fukui

Jun Yanagisawa

Yasuyuki Fujiwara

Xinming Huang

Keiichi Kohama

Tatsuo Fukami

Shinji Nakanishi

A production apparatus for a metal oxide single crystal according to the present invention includes a crucible for housing a crystal raw material and a seed crystal, which has a first end and a second end, and in which the crystal raw material is disposed on a first end side, and the seed crystal is disposed on a second end side, a heater that heats the crucible, and a cooling rod, which has a third end and a fourth end, and in which the third end is provided in contact with or in proximity to the second end of the crucible so as to cool the second end by depriving the second end of heat.

Production apparatus for metal oxide single crystal and production method for metal oxide single crystal

A production apparatus for a metal oxide single crystal according to one aspect of the present invention includes: a furnace having an interior heated to a temperature of 1,500&#xb0; C. or more in an oxidative atmosphere, a heater heating the interior of the furnace, an inlet pipe being disposed in a lower part of the furnace and connecting an interior and an exterior of the furnace, an exhaust pipe being disposed in an upper part of the furnace and connecting an interior and an exterior of the furnace, a duct being disposed above the furnace, and an exhaust fan and a harmful substance elimination device being disposed in the middle of the duct.

Production apparatus for gallium oxide crystal capable of preventing harmful substances formed in furnace from being diffused to surroundings of furnace

A crucible for growing a metal oxide single crystal is provided that can facilitate the balance between the thickness and the strength (hardness) of the constant diameter portion of the crucible and is capable of performing growth of a crystal having a large diameter. The crucible according to the present invention is a crucible for growing a metal oxide single crystal, including a reinforcing belt material provided on an outer periphery of a constant diameter portion of the crucible. It is possible that the crucible has an upper portion having a thickness that is smaller than a thickness of a lower portion of the crucible, and the upper portion of the crucible is the constant diameter portion.

Crucible for growing metal oxide single crystal

A gallium oxide crystal manufacturing device includes a crucible to hold a gallium oxide source material therein, a crucible support that supports the crucible from below, a crucible support shaft that is connected to the crucible support from below and vertically movably supports the crucible and the crucible support, a tubular furnace core tube that surrounds the crucible, the crucible support and the crucible support shaft, a tubular furnace inner tube that surrounds the furnace core tube, and a resistive heating element including a heat-generating portion placed in a space between the furnace core tube and the furnace inner tube. Melting points of the furnace core tube and the furnace inner tube are not less than 1900&#xb0; C. A thermal conductivity of a portion of the furnace core tube located directly next to the crucible in a radial direction thereof is higher than a thermal conductivity of the furnace inner tube.

Gallium oxide crystal manufacturing device

A sapphire ribbon of the present disclosure has a width, a thickness, and a length that are orthogonal to one another, a length direction is a growth direction, and the sapphire ribbon further has two main surfaces separate from each other in a thickness direction, and the width is at least 40 cm. Further, a monocrystalline ribbon manufacturing apparatus using EFG method according to the present disclosure includes a crucible having a width greater than a depth thereof, a die pair installed in the crucible and facing each other across a slit in the depth direction, a first heater and a second heater disposed around the crucible and facing each other in the depth direction, and a third heater and a fourth heater disposed around the crucible and facing each other in the width direction.

Sapphire ribbon and apparatus for manufacturing single crystal ribbons

The apparatus for producing a gallium oxide crystal relating to the invention contains a vertical Bridgman furnace containing: a base body; a cylindrical furnace body having heat resistance disposed above the base body; a lid member occluding the furnace body; a heater disposed inside the furnace body; a crucible shaft provided vertically movably through the base body; and a crucible disposed on the crucible shaft, heated with the heater, the crucible is a crucible containing a Pt-based alloy, the furnace body has an inner wall that is formed as a heat-resistant wall containing plural ring shaped heat-resistant members each having a prescribed height accumulated on each other, and the ring shaped heat-resistant members each contain plural divided pieces that are joined to each other to the ring shape.

Apparatus and method for producing gallium oxide crystal

To provide a single crystal production apparatus that is capable of prolonging the lifetime of a heater, and capable of reducing the cost. A single crystal production apparatus of the present invention is the single crystal production apparatus which produces a single crystal of a metal oxide in an oxidative atmosphere, containing: a base body; a cylindrical furnace body having heat resistance disposed above the base body; a lid member occluding the furnace body; a heater disposed inside the furnace body; a high frequency coil heating the heater through high frequency induction heating; and a crucible heated with the heater, the heater containing a Pt-based alloy and having a zirconia coating on an overall surface of the heater.

Apparatus for producing a single crystal of a metal oxide comprising a Pt-Rh alloy heater coated with zirconia

A method for manufacturing a dislocation-free silicon single crystal, includes the steps of preparing a silicon seed crystal formed of a dislocation-free single crystal having a boron concentration of 1&times;10 atoms/cm or more, preparing a silicon melt having a boron concentration which differs from that of the seed crystal by 7&times;10 atoms/cm or less, and bringing the seed crystal into contact with the silicon melt to grow the silicon single crystal.

Method for manufacturing dislocation-free silicon single crystal

A method of growing a rod form of a single oxide crystal is disclosed. The method uses a slit die which is placed in a crucible with a starting melt. The melt is seeded with a seed crystal while being rotated. The resulting crystal will have the same sectional shape as the shape of the upper surface of the die.

Growth method for a rod form of single oxide crystal

A rutile single crystal with no grain boundaries of large inclination is obtained by an EFG crystal growth process wherein a die provided with slits is incorporated in a feed melt 2 to deliver up the melt through the slits until it reaches the upper face of the die, thereby obtaining a single crystal conforming in configuration to the die by pulling growth.

Growing community of inventors

Nagano, Japan

Keigo Hoshikawa