Toshiba Memory Corporation

Keigo Hara

Marie Takada

Kiwamu Watanabe

Daisuke Iwai

Tetsuya Sunata

Yu Nakanishi

Kenji Funaoka

Shan Li

A semiconductor memory device includes a memory cell transistor, a word line coupled to the memory cell transistor, a temperature detection element configured to detect a temperature, and a control unit. The control unit is configured to determine, responsive to receiving a first command from a controller, a compensation value for a read voltage designated by the controller according to the detected temperature, and to lock updating of the compensation value.

Semiconductor memory device and memory system

According to one embodiment, a memory system includes: a non-volatile memory; a memory interface that reads a received word from the non-volatile memory; a decoder that decodes the received word; a control unit that predicts the number of error bits in the received word read from the non-volatile memory, predicts decoding time on the basis of the number of error bits predicted, and determines an operating clock frequency of the decoder on the basis of the predicted decoding time and requested decoding time being the decoding time requested; and a frequency control unit that supplies the operating clock frequency determined by the control unit to the decoder and supplies voltage corresponding to the operating clock frequency being determined to the decoder.

Memory system and memory control method

Growing community of inventors

Kanagawa, Japan

Keigo Hara