Sharp Kabushiki Kaisha Corporation

Kei Yamamoto

Koji Takahashi

Hidenori Kawanishi

Ken Ohbayashi

Yoshie Fujishiro

Mototaka Taneya

Toshihiko Yoshida

Yoshiyuki Takahira

Junichi Nakamura

Yosuke Maemura

Yukio Yamasaki

Takuma Hiramatsu

Fumihiro Konushi

Yasuo Fukai

A light emitting apparatus includes: a laser element which emits laser light; a light emitting section which generates fluorescence in response to the laser light emitted from the laser element; a parabolic mirror which reflects the fluorescence generated by the light emitting section; and a multilayer filter which transmits the laser light and reflects the fluorescence, the laser element being provided outside the parabolic mirror, the parabolic mirror being provided with a window part through which the laser light passes, and the multilayer filter being provided so as to cover the window part.

Light emitting apparatus, vehicle headlamp, illuminating apparatus, and vehicle, and method for assembling the light emitting apparatus

The present invention relates to a nitride semiconductor laser device having a structure in which two or more of nitride semiconductor laser elements, having at least a first electrode on a first main surface of a first conductive type conductive substrate, having at least a first conductive type nitride semiconductor layer, an active layer, a second conductive type nitride semiconductor layer, and a second electrode on a second main surface of the conductive substrate, and having a stripe-waveguide structure parallel to the first main surface, are arranged in a direction parallel to the first main surface and a direction perpendicular to the direction of light that is emitted from the stripe waveguide structure in the nitride semiconductor laser device, and the first sub-mount and the first electrode of the nitride semiconductor laser element are electrically and heat-conductively connected, and the second sub-mount and the second electrode of the nitride semiconductor laser element are electrically and heat-conductively connected.

Nitride semiconductor laser device

In a semiconductor laser device having an oscillation wavelength larger than 760 nm and smaller than 800 nm, at least a lower clad layer, a lower guide layer, an active region, an upper guide layer and an upper clad layer are supported by a GaAs substrate, the active region having a quantum well structure in which one or more well layers and barrier layers are stacked. The one or more well layers and the barrier layers are formed of any one of InGaP, InGaAsP and GaAsP, and the upper and/or lower guide layer is formed of AlGaAs (0.20&#x3c;z&#x2266;1).

Semiconductor laser device and optical disk unit using the same

There are provided preflow periods t, tin which group III element materials TMG, TMA and TMI are not supplied from a group III element material container to a reaction region (reactor), while a group V element material PHand an Mg dopant material are supplied from a group V element material container and a dopant material container to the reaction region (reactor) after an Mg-undoped group III-V compound semiconductor layer is crystallinically grown and before an Mg-doped group III-V compound semiconductor layer is crystallinically grown. According to the semiconductor manufacturing method, an Mg doping profile can be accurately controlled.

Semiconductor manufacturing method and semiconductor laser device manufacturing method

A 780 nm band semiconductor laser device has an InGaAsP well layer, phosphorous composition of which is 0.51 smaller than 0.55 to prevent spinodal decomposition in growing InGaAsP. A compressive strain of 0.65% less than 1% and more than 0.25% is introduced into the well layer to reduce threshold current thereof. Thus, the 0.78-&#x3bc;m band semiconductor laser device having the InGaAsP well layer stably operates for a long time even in outputting a high optical power of 100 mW or more. A tensile strain of 1.2% is also introduced into barrier layers within the active region so as to compensate the stress due to the compressive strain of the well layer. As a result, the reliability of the semiconductor laser device is further increased during a high output operation.

Semiconductor laser device and optical disc drive

A semiconductor laser device has an n-type AlGaAs first cladding layera multiple quantum well active layerand a p-type AlGaAs second cladding layerformed in this order and supported by an n-type GaAs substrateThe multiple quantum well active layerhas two quantum well layersand barrier layersprovided on both sides of each quantum well layerThe quantum well layersare each made of InGaAsP, while the barrier layersare each made of InGaAsP. Here, vand vsatisfy v&#x3c;vwhile wand wsatisfy w&#x3c;wThe barrier layers have a tensile strain with respect to the GaAs substrate, while the well layers have a compressive strain with respect to the GaAs substrate.

Semiconductor laser device

A gain-coupling type distributed feedback semiconductor laser device having a periodically varying gain along a cavity direction includes: a first periodic undulation formed along the cavity direction, the first periodic undulation including convex and concave portions; a semiconductor embedded layer formed on the first periodic undulation; and at least one active layer formed within the semiconductor embedded layer so as to extend along a direction which is perpendicular to the surface of a substrate, the at least one active layer being present on the concave portions of the first periodic undulation with a period which is substantially equal to a period of the first periodic undulation.

Gain-coupling type distributed feedback semiconductor laser and method for producing the same

A ridge waveguide type distributed feedback semiconductor laser device includes a diffraction grating formed on a surface of a semiconductor wafer, a semiconductor layer formed on the diffraction grating, the semiconductor layer serving to alleviate the irregularity of the diffraction grating, and a stripe-like ridge having a cladding layer and a contact layer formed on the semiconductor layer. Also, a method for manufacturing the ridge waveguide type distributed feedback semiconductor laser device is disclosed.

Growing community of inventors

Nara, Japan

Kei Yamamoto