Kabushiki Kaisha Toshiba

National Institute of Advanced Industrial Science and Technology

Kei Yakushiji

Hiroaki Yoda

Toshihiko Nagase

Masatoshi Yoshikawa

Tadashi Kai

Masahiko Nakayama

Eiji Kitagawa

Tadaomi Daibou

Naoharu Shimomura

Katsuya Nishiyama

Shinji Yuasa

Makoto Nagamine

Akio Fukushima

Koji Ando

Hitoshi Kubota

Taro Nagahama

According to one embodiment, a magnetoresistive element includes a first magnetic layer with a variable magnetization and an easy-axis in a perpendicular direction to a film surface, a second magnetic layer with an invariable magnetization and an easy-axis in the perpendicular direction, and a first nonmagnetic layer between the first and second magnetic layers. The first magnetic layer comprises a ferromagnetic material including an alloy in which Co and Pd, or Co and Pt are alternately laminated on an atomically close-packed plane thereof. The first magnetic layer has C-axis directing the perpendicular direction. And a magnetization direction of the first magnetic layer is changed by a current flowing through the first magnetic layer, the first nonmagnetic layer and the second magnetic layer.

Magnetoresistive element and magnetic memory

Growing community of inventors

Tsukuba, Japan

Kei Yakushiji