Kabushiki Kaisha Toshiba

Toshiba Memory Corporation

Nippon Telegraph and Telephone Corporation

Kioxia Corporation

Canon Kabushiki Kaisha

Toray Industries, Inc.

Olympus Corporation

Lenovo (singapore) Pte. Ltd.

Tohoku University

Kei Watanabe

Shinichi Nakao

Atsuko Sakata

Takeshi Ishizaki

Satoshi Wakatsuki

Shinya Okuda

Kosuke Horibe

Shunsuke Ochiai

Masayuki Kitamura

Junichi Wada

Mitsuhiro Omura

Daisuke Ikeno

Soichi Yamazaki

Toshiyuki Sasaki

Yusuke Oshiki

Yuya Matsubara

Yukio Nishiyama

Hirotaka Ogihara

Kazusada Takeda

Ichiro Mizushima

Kazuhiko Yamamoto

Yasuhito Yoshimizu

Toshikazu Hashimoto

Noriaki Matsunaga

Makoto Wada

Hiroshi Toyoda

Ryoichi Kasahara

Hideshi Miyajima

Akifumi Gawase

Hiroshi Takezaki

Yumi Hayashi

Junji Sakamoto

Daichi Watanabe

Satomi Katayose

Ryohei Kitao

Yu Kurata

Hisashi Miyama

Yosuke Nishimura

Mikiya Nishida

Hiroyuki Ishii

Yoshio Ozawa

Takeshi Yamaguchi

Naoki Fujiwara

Satoshi Ishikawa

Hideaki Suzuki

Tamio Ikehashi

Shinya Arai

Shigeki Kobayashi

Toshihiko Mimura

Tomohiro Saito

Miyoko Shimada

Yasushi Nakasaki

Hiroshi Itokawa

Hiroyuki Fukumizu

Keisuke Kikutani

Hiroshi Kitajima

Yoshiaki Shimooka

Kenji Aoyama

Kouji Matsuo

Yasuhiro Nojiri

Hidekazu Hayashi

Masataka Nakazawa

Nobuhide Yamada

Jun Nishimura

Hideyuki Kinoshita

Mikitaka Itoh

Naruhiko Kaji

Keita Dan

Junichi Hashimoto

Satoshi Kokubo

Kenichi Otsuka

Shingo Amano

Kenichi Ootsuka

Hideaki Masuda

Shigeto Oshino

Hisashi Harada

Kenkichi Yamamoto

Tomo Hasegawa

Naoki Yamakoshi

Kei Makita

Kaori Narumiya

Yusuke Kondo

Hiroto Mizohana

Takehiro Kondoh

Kazuki Otake

Hiroshi Katoh

Hirokazu Miyamori

Junya Fujita

Yasuaki Tokunaga

Keisuke Kasai

An external input device is employed, the external input device being configured to operate a robot system including an imaging apparatus capable of changing an imaging point of view and a robot apparatus, the external input device includes a display area, a robot apparatus operation unit configured to operate the robot apparatus, an imaging operation unit configured to operate the imaging apparatus, and an image display unit configured to display an image captured by the imaging apparatus, wherein the robot apparatus operation unit, the imaging operation unit, and the image display unit are displayed on the display area, and wherein the image display unit is disposed between the robot apparatus operation unit and the imaging operation unit.

External input device, robot system, control method of robot system, control program, and recording medium

A semiconductor device includes: a stacking part in which the plurality of conductor layers are separately stacked in a z direction; a stair part that is arranged alongside the stacking part in a y direction and in which the plurality of conductor layers are extended in the y direction in a stair shape; a first insulating film covering at least part of the stair part; a second insulating film covering at least part of the first insulating film and different from the first insulating film; and a contact connected with one of the plurality of conductor layers and penetrating through the first insulating film and the second insulating film. The linear expansion coefficient of the second insulating film is larger than the linear expansion coefficient of the first insulating film.

Semiconductor device with multilayer insulating layer in recess and method of manufacturing the same

In one embodiment, the semiconductor device includes a first insulator including Si (silicon) and O (oxygen). The device further includes a first interconnect provided in the first insulator and including a metal element. The device further includes a second insulator provided on the first insulator and the first interconnect and including Si, C (carbon) and N (nitrogen), content of Si—H groups (H represents hydrogen) in the second insulator being 6.0% or less, content of Si—CHgroups in the second insulator being 0.5% or less. The device further includes a second interconnect provided on the first interconnect in the second insulator and including the metal element.

Semiconductor device and method of manufacturing the same

A method for producing a semiconductor device includes forming, on a substrate, a film to be processed. The method further includes forming, on the film to be processed, a first film containing a metallic element and a second film containing at least one of carbon or boron. The method further includes forming an insulating film on the first and second films. The method further includes processing the film to be processed using the first film, the second film, and the insulating film, as a mask.

Method for producing semiconductor device

A system includes an information processing device. The information processing device is configured to acquire an image group from each of a plurality of cameras. The image group includes a plurality of images of an object that moves relative to each of the plurality of cameras. The plurality of images are captured by a corresponding camera at predetermined intervals and having different image capture times. The information processing device is configured to calculate an amount of movement of the object relative to each of the plurality of cameras, based on the image group acquired from each of the plurality of cameras. The information processing device is configured to detect a lag between image capture timings of the plurality of cameras, by using the amount of movement of the object relative to each of the plurality of cameras.

System, information processing method, method of manufacturing product, and recording medium with images of object that moves relative to cameras being captured at predetermined intervals and having different image capture times

According to one embodiment, a method of manufacturing a semiconductor device includes forming a first film on a substrate. The method further includes forming a second film on the first film. The method further includes forming a recess in the first film using the second film as a mask. The second film includes a first layer having carbon and a second layer having carbon formed on the first layer. The second layer has a second carbon density lower than a first carbon density of the first layer.

Manufacturing method of semiconductor device

A method of manufacturing a semiconductor device according to one embodiment includes forming a first film including a first metal above a processing target member. The method includes forming a second film including two or more types of element out of a second metal, carbon, and boron above the first film. The method includes forming a third film including the first metal above the second film. The method includes forming a mask film by providing an opening part to a stacked film including the first film, the second film and the third film. The method includes processing the processing target member by performing etching using the mask film as a mask.

Method for manufacturing semiconductor device

An image processing apparatus includes an identifiability value obtaining portion, an inspection region generation portion, and an image inspection portion. The identifiability value obtaining portion is configured to obtain, for each pixel address constituting an image plane, an identifiability value for identifying which of a first inspection result and a second inspection result the pixel address corresponds to. The inspection region generation portion is configured to generate an inspection region serving as a target of image processing by setting a portion of the image plane including the pixel address where the obtained identifiability value satisfies a specific condition as the inspection region. The image inspection portion is configured to perform image processing for inspection on a partial image corresponding to the inspection region among a third image obtained by imaging a third target object.

Image processing method and image processing apparatus that generate an inspection region serving as a target of image processing

An image processing apparatus includes a provisional model generation portion, a matching score obtaining portion, an evaluation portion, and a determination portion. The provisional model generation portion is configured to generate a plurality of provisional models. The matching score obtaining portion is configured to perform the pattern matching between each of the plurality of provisional models and each of a plurality of evaluation images, and obtain a first matching score group that is a set of first matching scores indicating a highest degree of similarity and a second matching score group. The evaluation portion is configured to calculate an evaluation value from the first matching score group and the second matching score group. The determination portion is configured to determine a matching model from among the plurality of provisional models on a basis of the calculated evaluation value.

Image processing method and image processing apparatus

Provided is an optical multiplexing circuit. The waveguide width of each waveguide is set such that the effective refractive index of a first optical waveguide with a first light beam in the 0-th order mode is equal to the effective refractive index of a MM conversion waveguide with the first light beam in the higher order mode and that the effective refractive indexes of the MM conversion waveguide with second and third light beams in the higher order mode are not equal to the effective refractive indexes of a second optical waveguide with the second and third light beams in the 0-th order mode.

Optical multiplexing circuit

A polyarylene sulfide resin particulate has a mean particle diameter from more than 1 &#x3bc;m to 100 the uniformity is 4 or less, the melt viscosity measured at temperature of 300&#xb0; C. and shear rate of 1216 secis 150 to 500 Pa&#xb7;s, and the recrystallization temperature, defined as temperature of the heat generation peak at the time of crystallization when cooled from 340&#xb0; C. to 50&#xb0; C. at 20&#xb0; C./min using a differential scanning calorimeter, is 150 to 210&#xb0; C. The polyarylene sulfide resin particulate is suitable as a material powder for producing a three-dimensional molding by a powder sintering three-dimensional printer can be provided efficiently.

Polyarylene sulfide resin particulate and method of producing same

A fringe projector apparatus includes: a phase modulator having a first waveguide, a second waveguide, and a plurality of heaters including a first heater and a second heater, wherein the first and second waveguides and the plurality of heaters are provided on a single substrate, and wherein the first heater heats the first waveguide and the second heater heats a position away from the first waveguide; a light source that generates a light beam to be input to the first waveguide and the second waveguide; and a controller that controls a phase difference between the first waveguide and the second waveguide by changing an electric power consumption of the first heater under a condition that a total electric power consumption of the plurality of heaters is constant.

Phase modulator, control method for phase modulator, and fringe projector apparatus

A method of producing polybutylene terephthalate resin shaped moldings includes supplying a 3D printer with a polybutylene terephthalate resin powder mixture that contains 100 parts by weight of a polybutylene terephthalate resin powder material having a mean diameter of more than 1 &#x3bc;m and 100 &#x3bc;m or less, a uniformity coefficient of 4 or less, and a terminal carboxyl group quantity of 35 eq/t or more and 50 eq/t or less, and 0.1 to 5 parts by weight of inorganic particles having a mean diameter of 20 to 500 nm.

Polybutylene terephthalate resin powder mixture

An illumination apparatus generates an interference fringe. An input arm receives an input light beam from a light source. A splitter splits the input light beam that has passed through the input arm into a first output arm and a second output arm. A phase modulator changes a phase difference between the output light beams of the first output arm and the second output arm. A phase detector detects the phase difference between output light beams respectively output from the first output arm and the second output arm based on a return light beam generated by combining a first reflected light beam and a second reflected light beam respectively reflected by ends of the first output arm and the second output arm.

Illumination apparatus

In one embodiment, a semiconductor device includes electrode layers and insulating layers alternately provided on a substrate and stacked in a first direction perpendicular to a surface of the substrate, and semiconductor layers provided in the electrode layers and insulating layers, extending in the first direction, and adjacent to each other in a second direction parallel to the surface of the substrate. The device further includes first and second charge trapping layers provided between the semiconductor layers and electrode layers sandwiching the semiconductor layers in a third direction parallel to the surface of the substrate. The device further includes insulators provided between the semiconductor layers being adjacent to each other in the second direction, and including a first insulator having a first width, and a second insulator having a second width longer than the first width and having nitrogen concentration different from that in the first insulator.

Growing community of inventors

Tokyo, Japan

Kei Watanabe