Semiconductor Energy Laboratory Co., Ltd.

Sony Corporation

Other

Sharp Kabushiki Kaisha Corporation

Sony Group Corporation

The Furukawa Electric Co., Ltd.

Sony Computer Entertainment Inc.

Furukawa Automotive Systems Inc.

Toray Industries, Inc.

Nlt Technologies, Ltd.

Yamaichi Electronics Co., Ltd.

Kabushiki Kaisha Toshiba

Hitachi-kokusai Electric Inc.

Nec Lcd Technologies, Ltd.

Sony Mobile Communications Inc.

Kei Takahashi

Shunpei Yamazaki

Koji Kusunoki

Kouhei Toyotaka

Hiroyuki Miyake

Susumu Kawashima

Jun Koyama

Kazunori Watanabe

Junpei Momo

Yoshiaki Ito

Takayuki Ikeda

Hidetomo Kobayashi

Hiroki Inoue

Minoru Takahashi

Masashi Tsubuku

Kosei Noda

Yuki Okamoto

Masaaki Hiroki

Hideaki Kuwabara

Ikuo Yamano

Hideaki Shishido

Kensuke Yoshizumi

Yoshifumi Tanada

Tsuyoshi Ishikawa

Takeshi Aoki

Yuichi Yanagisawa

Yoshiyuki Kurokawa

Munehiro Kozuma

Kazuhiko Miyata

Takahiko Ishizu

Junichi Shimizu

Takuya Kawata

Roh Yamamoto

Takanori Matsuzaki

Takeshi Osada

Ryota Tajima

Toshiyuki Isa

Takahiro Fukutome

Ryota Fukumoto

Yuto Yakubo

Tatsuji Nishijima

Junichi Nagahara

Tomoo Mizukami

Kentaro Hayashi

Ryu Aoyama

Satoshi Seo

Hajime Kimura

Hidekazu Miyairi

Hideto Ohnuma

Daisuke Kubota

Satoshi Murakami

Hiromichi Godo

Tatsuya Onuki

Shunichi Kasahara

Tsubasa Tsukahara

Shinichi Kawano

Koichiro Kamata

Yasushi Okumura

Jun Kimura

Yuji Iwaki

Masataka Nakada

Kazuo Nishi

Masato Ishii

Yoshihito Ohki

Tomohiro Tsunoda

Mayumi Mikami

Yosuke Tsukamoto

Shuhei Maeda

Ryouhei Yasuda

Kiyotaka Kimura

Shigeru Onoya

Ayumi Kato

Naoki Izumimoto

Shintaro Harada

Mitsuaki Osame

Hisao Ikeda

Naoto Kusumoto

Junya Maruyama

Hideyuki Suzuki

Atsushi Miyaguchi

Hideo Nagasaka

Kohei Yokoyama

Yohei Momma

Tomoyuki Iwabuchi

Sheng Wang

Tamae Moriwaka

Ayako Iwase

Masaru Fujii

Hiroyuki Mizunuma

Masaaki Saito

Mizuki Sato

Ayumi Nakagawa

Junji Kato

Naoaki Tsutsui

Takeya Hirose

Satoshi Yoshimoto

Haruo Ikeda

Yasushi Aoyagi

Takehisa Sato

Satoshi Nagai

A battery control circuit with a novel structure, a battery protection circuit with a novel structure, and a power storage device including either of the battery circuits are provided. The power storage device includes a first circuit portion, a second circuit portion, a third circuit portion, and a secondary battery; the first circuit portion has a function of controlling charging of the secondary battery; the first circuit portion has a function of supplying the start time and the end time of the charging of the secondary battery to the third circuit portion; the second circuit portion has functions of generating a first voltage and a first current and supplying them to the third circuit portion; the third circuit portion has a function of generating a second voltage by charging the first current in a capacitor; and the third circuit portion has a function of comparing the first voltage and the second voltage.

Power storage device and method for operating power storage device

A secondary battery control system that conducts abnormality detection while predicting other parameters (internal resistance, SOC, and the like) with high accuracy is provided. A difference between an observation value (voltage) at a certain point in time and a voltage that is estimated using a prior-state variable is sensed. A threshold voltage is set in advance, and from the voltage difference that is sensed, a sudden abnormality, specifically a micro-short circuit or the like is detected. Furthermore, it is preferable that detection be performed by using a neural network to learn data on voltage difference in a time series and determine abnormality or normality.

Device detecting abnormality of secondary battery, abnormality detection method, and program

To provide a flexible, highly reliable power storage device or light-emitting device. The device includes a battery unit or a light-emitting unit and a member with rubber elasticity. The battery unit includes a secondary battery. The light-emitting unit includes a light-emitting element. The member with rubber elasticity is provided with a first projection and a second projection. The first projection and the second projection are arranged on a first surface of the battery unit or the light-emitting unit. The first projection and the second projection come in contact with each other when the power storage device is bent such that the first surface of the battery unit faces inward.

Power storage device, light-emitting device, and electronic device

A novel display device or the like in which a transistor connected to a scan line has small gate capacitance is provided. A novel display device or the like in which a scan line has low resistance is provided. A novel display device or the like in which pixels can be arranged with high density is provided. A novel display device or the like that can be manufactured without an increase in cost is provided. In a transistor including a first gate electrode and a second gate electrode, the first gate electrode is formed using a metal material with low resistance and the second gate electrode is formed using a metal oxide material that can reduce oxygen vacancies in an oxide semiconductor layer. The first gate electrode is connected to the scan line, and the second gate electrode is connected to a wiring to which a constant potential is supplied.

Display device, display module, and electronic device

An object is to reduce leakage current and parasitic capacitance of a transistor used for an LSI, a CPU, or a memory. A semiconductor integrated circuit such as an LSI, a CPU, or a memory is manufactured using a thin film transistor in which a channel formation region is formed using an oxide semiconductor which becomes an intrinsic or substantially intrinsic semiconductor by removing impurities which serve as electron donors (donors) from the oxide semiconductor and has larger energy gap than that of a silicon semiconductor. With use of a thin film transistor using a highly purified oxide semiconductor layer with sufficiently reduced hydrogen concentration, a semiconductor device with low power consumption due to leakage current can be realized.

Semiconductor device and manufacturing method thereof

A display apparatus includes a data generation circuit, a source driver circuit, and a pixel. The source driver circuit is electrically connected to the pixel through first and second wirings. The pixel includes a display device that is a liquid crystal device, a potential of one electrode of the display device can be a potential of the first wiring, and a potential of the other electrode of the display device can be a potential of the second wiring. The image data generation circuit has a function of generating digital image data including first and second data. One of the first and second wirings is made to have a potential corresponding to first data, and the other of the first and second wirings is made to have a potential corresponding to the second data. The potential of the first wiring and the potential of the second wiring are interchanged.

Display apparatus

A novel display is provided. A display having a small change in chromaticity of a micro light-emitting diode in proportion to current density is provided. A display capable of reducing power consumption in the driver circuit when displaying a still image is provided. The display includes a plurality of pixels each including a display element and a microcontroller. The microcontroller includes a first transistor, a triangular wave generator circuit, a comparator, a switch, and a constant current circuit. The first transistor has a function of retaining a potential corresponding to data written to the pixel by being switched off. The triangular wave generator circuit has a function of generating a triangular wave signal. The comparator has a function of generating an output signal corresponding to the potential and the triangular wave signal. The switch has a function of controlling whether or not to make a current flowing in the constant current circuit flow to the display element in accordance with the output signal.

Display and electronic device including the display

A semiconductor device includes a switch, a capacitor, a chopping circuit, and an amplifier. The amplifier includes a non-inverting input terminal, an inverting input terminal, an inverting output terminal, and a non-inverting output terminal. The semiconductor device, with use of the switch and the capacitor, has a function of sampling and holding a first potential and a second potential input in a first period. The chopping circuit is provided on each of the input terminal side and the output terminal side of the amplifier, and the first potential and the second potential are each input to either one of the non-inverting input terminal and the inverting input terminal in a second period. In a third period, the first potential and the second potential are each input to either one of the non-inverting input terminal and the inverting input terminal, which is different from the second period.

Semiconductor device and operation method thereof

Provided is a display device or a display system capable of displaying images along a curved surface, a display device or a display system capable of displaying images seamlessly in the form of a ring, or a display device or a display system that is suitable for increasing in size. The display device includes a display panel. The display panel includes a first part and a second part and is flexible. The first part can display images. The second part can transmit visible light. The display panel is curved so that the second part and the first part overlap with each other.

Display device, display unit, and display system

Provided is an information processing apparatus, and an information processing method in which data of content is acquired, and a first visual field image corresponding to a visual field of a first user is cut out from a content image based on the data of the content. In addition, visual field information representing a visual field of a second user viewing the content image is acquired. Furthermore, in a display apparatus, the first visual field image is displayed, and the visual field of the second user is displayed based on the visual field information of the second user.

Information processing apparatus and information processing method

To achieve multifunctionality, a large number of components and the time and effort for implementing the components are required, which leads to an increase in the manufacturing cost and a reduction in yield. A matrix display portion and a matrix optical sensor portion are formed over one substrate. In addition, a driver circuit of the display portion and a driver circuit of the optical sensor portion formed over the same substrate as that for the display portion are built in one chip, whereby the number of components can be reduced. When the optical sensor is formed in a display panel, a barcode reader function or a scanner function can be given to the display panel. Furthermore, a function of authenticating fingerprints or the like or an input/output function of a touch sensor can be given to the display panel.

A semiconductor device with reduced power consumption is provided. With three transistors, potentials of two nodes are switched and a voltage is detected. One of a source and a drain of a first transistor is electrically connected to a first terminal. The other of the source and the drain of the first transistor is electrically connected to a non-inverting input of a comparator through a first node. One of a source and a drain of a second transistor is electrically connected to a second terminal. The other of the source and the drain of the second transistor is electrically connected to one of a source and a drain of a third transistor through a second node. The other of the source and the drain of the third transistor is electrically connected to a third terminal. A first capacitor is provided between the first node and the second node. An inverting input of the comparator is electrically connected to a fourth terminal. An output of the comparator is electrically connected to a fifth terminal.

Semiconductor device, battery pack, and electronic device

The safety is ensured in such a manner that an abnormality of a secondary battery is detected, for example, a phenomenon that lowers the safety of the secondary battery is detected early and a warning is given to a user. A first protection circuit and a second protection circuit are provided for one secondary battery. The first protection circuit includes a memory circuit including a transistor including an oxide semiconductor. Combination of a plurality of protection circuits enables a complementary double protection system in charging, and the safety can be further enhanced.

Protection circuit for secondary battery and abnormality detection system of secondary battery

A display device with favorable display quality is provided. A display portion where a plurality of pixels is arranged in a matrix is divided into Region A and Region B, i.e., regions on the upstream side and the downstream side of a scanning direction. A signal line for supplying an image signal is provided in each of Region A and Region B. Region A and Region B adjoin each other such that a boundary line showing the boundary between the regions is bent. Bending the boundary line suppresses formation of a stripe in a boundary portion. For example, in a given column, the total number of pixels electrically connected to a signal line in Region A is made different from the total number of pixels electrically connected to a signal line in Region B.

Display device

A novel oscillator, an amplifier circuit, an inverter circuit, an amplifier circuit, a battery control circuit, a battery protection circuit, a power storage device, a semiconductor device, an electric device, and the like are provided. The semiconductor device includes an oscillator including a first transistor containing a metal oxide, and a second transistor to a fifth transistor, in which a first potential is supplied to a gate of the second transistor and a gate of the third transistor when the first transistor is turned on, and the first potential is held when the first transistor is turned off. The oscillator supplies a first signal based on the first potential to a first circuit. The first circuit performs at least one of shaping and amplification on the first signal. The second transistor and the fourth transistor are connected in series, and the third transistor and the fifth transistor are connected in series. A source or a drain of the third transistor is electrically connected to a gate of the fourth transistor, and a source or a drain of the fourth transistor is electrically connected to the gate of the third transistor.

Semiconductor device and method for operating semiconductor device

Growing community of inventors

Kanagawa, Japan

Kei Takahashi