Screen Holdings Co., Ltd.

Kei Suzuki

Masaki Inaba

Linh Da Ho

Koji Ando

Noritake Sumi

Tomohiro Motono

A substrate processing method for removing an organic film on a substrate includes a) carrying out introduction of ozone-containing gas into a substrate processing chamber to fill at least a space above the substrate in the substrate processing chamber with ozone-containing gas, b) starting spraying through the space a heated chemical liquid containing sulfuric acid onto the substrate after the a), c) continuing the spraying started in the b), and d) stopping the spraying continued in the c).

Substrate processing method and substrate processing apparatus

A substrate processing method is provided, which includes: a sulfuric acid immersing step of immersing a plurality of substrates in a sulfuric acid-containing liquid within a sulfuric acid vessel; a transporting step of taking out the substrates from the sulfuric acid vessel and transporting the substrates to an ozone gas treatment unit; and an ozone exposing step of exposing the substrates transported to the ozone gas treatment unit to an ozone-containing gas. The ozone gas treatment unit may include a gas treatment chamber which accommodates the substrates. The ozone exposing step may include the step of placing the substrates taken out of the sulfuric acid vessel in a treatment space within the gas treatment chamber to expose the substrates to the ozone-containing gas.

A substrate processing apparatus according to the present invention includes a support tray that is configured in such a manner that a residual liquid getting in between a lower surface of a substrate and a substrate facing surface of the support tray is trapped in a groove. The support tray further includes a discharge part through which the residual liquid trapped in the groove is discharged from the groove through a discharge part. As a result, backflow of the residual liquid is prevented effectively, thereby preventing re-adhesion of the residual liquid to the upper surface of the substrate.

Substrate processing apparatus and substrate processing method

The substrate processing method includes a liquid film forming step of forming a liquid film of a sulfuric acid-containing liquid on a principal surface of a substrate, an ozone-containing gas exposing step of filling an ozone-containing gas inside a processing chamber capable of housing the substrate to expose the liquid film to the ozone-containing gas, and a substrate heating step of heating the substrate in a state that the substrate is disposed inside the processing chamber which is filled with the ozone-containing gas and the liquid film is also formed on the principal surface of the substrate.

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Kyoto, Japan

Kei Suzuki