Panasonic Corporation

Matsushita Electric Industrial Co., Ltd.

Sumitomo Chemical Company, Limited

Joled Inc.

Kyushu University

Matsushita Electrical Industrial Co., Ltd.

Kei Sakanoue

Takahiro Komatsu

Shozo Oshio

Hidenori Kamei

Toshihide Maeda

Yasuyuki Hanada

Tadaaki Ikeda

Katsuaki Iwama

Hiromi Kitahara

Takayuki Takeuchi

Satoru Ohuchi

Yoshiaki Tsukamoto

Kenji Harada

Seiji Nishiyama

Shinya Fujimura

Shuhei Nakatani

Seiji Shinkai

Hidenobu Kakimoto

Osamu Goto

Shuichi Haraguchi

Ryuichi Yatsunami

Masashi Ogawa

Tomohiro Shiraki

Chihaya Adachi

Kenichi Nendai

Shigeyuki Matsunami

Ryuuta Yamada

Shintaro Hara

Kensei Fukuda

Hideaki Iwanaga

Tetsuro Kondoh

Yoshinobu Kuwamoto

Akira Gyotoku

Qisheng Zhang

Shoji Kuroda

A chip-type light-emitting semiconductor device includes: a substratea blue LEDmounted on the substrateand a luminescent layermade of a mixture of yellow/yellowish phosphor particlesand a base material(translucent resin). The yellow/yellowish phosphor particlesis a silicate phosphor which absorbs blue light emitted by the blue LEDto emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (SrBaCaEu)SiO(0&#x2264;a1&#x2264;0.3, 0&#x2264;b1&#x2264;0.8 and 0&#x3c;x&#x3c;1). The silicate phosphor particles disperse substantially evenly in the resin easily. As a result, excellent white light is obtained.

Luminescent layer and light-emitting semiconductor device

An organic light-emitting element comprising: an anode; a cathode; banks; a functional layer between the anode and the cathode; and a hole injection layer between the anode and the functional layer. The functional layer includes one or more sublayers including a light-emitting sublayer defined by the banks and that contains an organic material. The hole injection layer comprises tungsten oxide, includes an occupied energy level that is approximately 1.8 electron volts to approximately 3.6 electron volts lower than a lowest energy level of a valence band of the hole injection layer in terms of a binding energy, has a surface facing the functional layer, and has a recessed structure such that a portion of the surface overlapping with the light-emitting sublayer is located closer to the anode than other portions. The recessed structure has a recessed portion whose inner surface is in contact with the functional layer.

Organic electroluminescence element

A problem of the present invention is to prevent a base layer beneath the layer to be irradiated with light from deterioration in property and a functional thin film from deterioration in property as the fine patterning of a functional film is performed with light irradiation. Means for solving the problem is a compound obtained by dimerizing with light irradiation a compound (A) containing a group that has photosensitivity and can be photodimerized and a group having lyophilicity and a compound (B) containing a group that has photosensitivity and can be photodimerized and a group having liquid-repellency.

Compound obtained by dimerizing with light irradiation, a compound containing a group having lyophilicity, and a compound containing a group having liquid-repellency

In an organic EL element, a bank is formed on a hole injection layer so as to surround light-emitting layer. The hole injection layer is formed with a tungsten oxide thin film, and has, in an electronic state thereof, an occupied energy level 1.8 eV to 3.6 eV lower than the lowest energy level of a valence band of the hole injection layer. The hole injection layer has a recessed portion in an upper surface thereof. An inner surface of the recessed portion is in contact with a functional layer (light-emitting layer). the inner side surface of the recessed portion includes an upper edge that is one of aligned with part of a lower edge of the bank, the part being in contact with the functional layer, and in contact with a bottom surface of the bank.

Organic EL element

An organic electroluminescent (EL) element comprises: an anode; a cathode; a functional layer disposed between the anode and the cathode, and including a light-emitting layer containing an organic material; a hole injection layer disposed between the anode and the functional layer; and a bank that defines an area in which the light-emitting layer is to be formed, wherein the hole injection layer includes tungsten oxide and includes an occupied energy level that is approximately 1.8 electron volts to approximately 3.6 electron volts lower than a lowest energy level of a valence band of the hole injection layer in terms of a binding energy, the hole injection layer has a recess in an upper surface of the area defined by the bank, and an upper peripheral edge of the recess is covered with a part of the bank.

The compounds represented by the following general formula have excellent properties as a charge transport material. In the formula, Rto Rrepresent a substituent, n1 and n2 indicate an integer of from 0 to 5, n3 indicates an integer of from 0 to 4, X represents a linking group of &#x2014;O&#x2014;, &#x2014;S&#x2014;, &#x2014;SO&#x2014;, &#x2014;CS&#x2014;, &#x2014;R&#x2014;, &#x2014;C(R)(R)&#x2014;, &#x2014;PO(R)&#x2014;, &#x2014;Si(R)(R)&#x2014;, &#x3e;PO&#x2014;, &#x3e;Si(R)&#x2014; or &#x3e;Si&#x3c;, m is an integer of from 2 to 4, Rrepresents an aliphatic cyclic linking group, and Rto Rrepresent a hydrogen atom, an alkyl group, an aryl group, etc. 

Compound and organic device employing same

An organic light-emitting element includes an anode, a functional layer, and a hole injection layer between the anode and the functional layer. The functional layer contains an organic material. The hole injection layer injects holes to the functional layer. The hole injection layer comprises tungsten oxide and includes an occupied energy level that is approximately 1.8 electron volts to approximately 3.6 electron volts lower than a lowest energy level of a valence band of the hole injection layer in terms of binding energy.

Organic el element

A problem of the present invention is to provide a device having good characteristics and long life, wherein a functional thin film is formed in a desired region by a coating method; a thin film transistor; a method for producing the device; and a method for producing the thin film transistor. This problem can be solved by a device comprising: a substrate, a first electrode formed on the substrate, a functional thin film formed above the first electrode, and a second electrode disposed above the functional thin film, characterized by further comprising, in a region surrounding the region where the functional thin film is formed, a film containing a compound in which a group containing fluorine and a &#x3c0;-conjugated system are bound together by a cycloalkene structure or a cycloalkane structure.

Device, thin film transistor, method for manufacturing the device and method for manufacturing the thin film transistor

To improve the light emission characteristics of a device when a transition metal oxide is used for the hole injection layer, in particular, to enhance the electron blocking characteristics of a transition metal oxide. An organic electroluminescence element comprising an anode, a cathode and a plurality of functional layers formed between the anode and the cathode, the functional layer containing a layer with a light-emitting function composed of at least one kind of an organic semiconductor and, between the anode and the layer with a light-emitting function, a charge injection layer composed of at least one kind of a transition metal oxide, wherein the ratio of the metal to oxygen at the anode side of the transition metal oxide layer is smaller than the stoichiometric ratio and at the same time, the ratio of the metal to oxygen at the layer with a light-emitting function side is greater than that at the anode side.

Organic electroluminescence element with enhanced electron blocking characteristics and manufacturing method thereof

To provide an organic electroluminescence element including a structure that facilitates manufacturing of a large scale organic EL panel and a manufacturing method thereof, the organic electroluminescence element includes: an anode; a cathode; an organic luminescent layer located between the anode and the cathode; and a hole injection layer located between the anode and the organic luminescent layer. The hole injection layer comprises a mixture of molybdenum oxide and tungsten oxide that contains a molybdenum element in a range of 9 atomic percent to 35 atomic percent.

Organic electroluminescence element and manufacturing method thereof

An organic EL device which drives over a wide range from low brightness to high brightness for light source applications, operates stably over a wide range of brightness and has excellent life property is provided. The device comprises at least one pair of electrodesand, and a plurality of functional layers disposed between the electrodesand, the functional layers comprising a layerhaving the light emitting function, which is composed of at least one polymeric material and contains an organic solvent and a charge injection layercomposed of at least one inorganic material.

Organic electroluminescent device and method for manufacturing the same

A chip-type light-emitting semiconductor device includes: a substrate; a blue LEDmounted on the substrate; and a luminescent layermade of a mixture of yellow/yellowish phosphor particlesand a base material(translucent resin). The yellow/yellowish phosphor particlesis a silicate phosphor which absorbs blue light emitted by the blue LEDto emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (SrBaCaEu)SiO(0&#x2266;a&#x2266;0.3, 0&#x2266;b&#x2266;0.8 and 0&#x3c;x&#x3c;1). The silicate phosphor particles disperse substantially evenly in the resin easily. As a result, excellent white light is obtained.

Light-emitting semiconductor device, light-emitting system and method for fabricating light-emitting semiconductor device

A chip-type light-emitting semiconductor device includes: a substrate; a blue LEDmounted on the substrate; and a luminescent layermade of a mixture of yellow/yellowish phosphor particlesand a base material(translucent resin). The yellow/yellowish phosphor particlesis a silicate phosphor which absorbs blue light emitted by the blue LEDto emit a fluorescence having a main emission peak in the wavelength range from 550 nm to 600 nm, inclusive, and which contains, as a main component, a compound expressed by the chemical formula: (SrBaCaEu)SiO(0&#x2266;a1&#x2266;0.3, 0&#x2266;b1&#x2266;0.8 and 0&#x3c;x&#x3c;1). The silicate phosphor particles disperse substantially evenly in the resin easily. As a result, excellent white light is obtained.

Growing community of inventors

Fukuoka, Japan

Kei Sakanoue