Tokyo Electron Limited

Kei Miyazaki

Shinji Nagashima

Kenji Yasuda

Kiminari Sakaguchi

Yuichiro Uchihama

Takeshi Tamura

Kyoshige Katayama

Yuta Yoshimura

Processing of applying ultraviolet rays to a front face of an insulating film material formed on a wafer W is performed, whereby a contact angle of the front face thereof becomes smaller. Accordingly, when an insulating film material is applied on the aforesaid front face, the material smoothly spreads, and projections and depressions never occur on a front face of an upper layer insulating film material. Thereby, it is possible to form the insulating film thick and flatter on a substrate.

Substrate processing method and substrate processing apparatus

In a heat processing apparatus of a low-oxygen curing and cooling processing station, a plurality of blast ports are provided in a ring shutter along a thickness direction of a wafer and a heated inert gas is supplied into a heat processing chamber via the blast ports, so that both faces of the wafer can be heated while the inside of the heat processing chamber is exchanged for the inert gas. Accordingly, heat processing for the substrate can be efficiently performed in a short period of time.

Substrate processing apparatus and substrate processing method

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Kikuyo-Machi, Japan

Kei Miyazaki