Sumco Corporation

Kei Matsumoto

Noritomo Mitsugi

Masataka Hourai

Tsuyoshi Kubota

Kiyoshi Nagai

Kazutaka Eriguchi

Shuichi Samata

Ryuji Ohno

An aspect of the present invention relates to a method of evaluating metal contamination in a semiconductor wafer that has been subjected to a heat treatment, which comprises obtaining analysis values by analyzing a plurality of analysis points on a surface of the semiconductor wafer by a first analysis method or a second analysis method, wherein in the first analysis method, analysis values employed in evaluation decrease as an amount of contamination by a metal element that is to be evaluated increases, and in the second analysis method, analysis values employed in evaluation increase as an amount of contamination by a metal element that is to be evaluated increases, and wherein determination of presence or absence of localized contamination by the metal element that is to be evaluated is made by evaluating the analysis values based on the normal value specified by a probability distribution function.

Method of evaluating metal contamination in semiconductor wafer and method of manufacturing semiconductor wafer

An aspect of the present invention relates to a method of evaluating metal contamination in a semiconductor sample by DLTS method, which includes obtaining a first DLTS spectrum by measuring a DLTS signal while varying a temperature, the DLTS signal being generated by alternatively and cyclically applying to a semiconductor junction on a semiconductor sample a reverse voltage Vto form a depletion layer and a weak voltage Vto trap carriers in the depletion layer; obtaining a second DLTS spectrum by measuring a DLTS signal while varying a temperature, the DLTS signal is being generated by cyclically applying the Vto the semiconductor junction; obtaining a differential spectrum of the first DLTS spectrum with a correction-use spectrum in the form of the second DLTS spectrum or a spectrum that is obtained by approximating the second DLTS spectrum as a straight line or as a curve.

Method of evaluating metal contamination in semiconductor sample and method of manufacturing semiconductor substrate

To provide a method of removing a heavy metal contained in a thinned semiconductor substrate. A method of removing a heavy metal in a semiconductor substrate of the present invention comprises: attaching, to a rear surface of the semiconductor substrate, a material that lowers a potential barrier of the rear surface of the semiconductor substrate, on a front surface of which a circuit is to be formed or is formed; applying a thermal treatment to the semiconductor substrate under a condition based on a thickness and a resistivity of the semiconductor substrate; and, depositing the heavy metal in the semiconductor substrate on the rear surface.

Method of removing heavy metal in semiconductor substrate

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Hiroshima, Japan

Kei Matsumoto