Lam Research Ag

Sony Corporation

Sez Japan, Inc.

Kei Kinoshita

Hayato Iwamoto

Philipp Engesser

Hajime Ugajin

Keisuke Sato

An apparatus for treating a wafer-shaped article, comprises a spin chuck for holding a wafer-shaped article in a predetermined orientation, a liquid dispenser for dispensing a treatment liquid onto a downwardly facing surface of a wafer-shaped article when positioned on the spin chuck, and a gas dispenser for dispensing a gas within a gap defined between the downwardly-facing surface of the wafer-shaped article and an upper surface of the spin chuck.

Method and apparatus for liquid treatment of wafer-shaped articles

A method and device for treating a wafer-shaped article utilizes a novel clamping mechanism, which permits wafer shift to be performed with reduced wear to the chuck pins. A wafer is rotated on a spin chuck that has a plurality of pins positioned at a periphery of the wafer shaped article. The pins each have a head portion which, in a service position, extends radially inwardly of and above the wafer. Gas is supplied onto a surface of the wafer facing the spin chuck at a flow rate sufficient to displace the wafer upwardly into contact with the head portions of the pins. This serves to clamp the wafer against the head portions of the pins. However, the pins contact the wafer only on upwardly oriented wafer surfaces and the wafer is supported from below solely by the gas flow.

Method and device for processing wafer shaped articles

Disclosed is a method for treating semiconductor wafer including:

Method for treating a semiconductor wafer

Method for drying a surface of a disc-shaped article includes covering the surface with a rinsing liquid, whereby a closed liquid layer is formed, and removing the rinsing liquid, wherein the rinsing liquid containing at least 50 wt. % water and at least 5 wt. % of a substance, wherein the substance lowers the surface energy of water, wherein the removing of the liquid is initiated by blowing gas onto the closed liquid layer, whereby the closed liquid layer is opened at on discrete area.

Method for drying a surface

According to the present invention, a process for changing the form of a processed film is performed to planarize it before the processed film which is formed on a wafer is processed in a manufacturing process of a semiconductor device. As the process for changing the form of the processed film, there may be exemplified a single wafer type wet etching process. The compatibility of the processed film with processing means is taken into consideration and, for instance, the wet etching process is applied to the processed film so as to eliminate parts incompatible with the processing means, so that a distribution in-plane of the processed film is previously improved.

Method for manufacturing semiconductor device

An etching method and etching device are provided, enabling uniform rendering of the thickness of a film for processing on a wafer regardless of the film thickness profile thereof, and thereby enabling global planarizing of the wafer surface. In an etching method, the film thickness profile of the film for processing formed on the wafer is ascertained in advance, and wet etching is performed by discharging an etchant liquid Lat a thick portion of the film for processing; simultaneously with the discharge of the etchant liquid L, a diluting liquid Lfor the etchant liquid Lis discharged at a thin portion of the film for processing.

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Villach, Austria

Kei Kinoshita