Seiko Epson Corporation

Central Glass Company, Limited

Kei Kawahara

Katsumi Mori

Mikihiro Takahashi

Yoshikazu Kasuya

Takayoshi Morinaka

Wataru Kawabata

Katsumasa Mori

A multilayer semiconductor device includes first wirings extending in a first direction and arranged adjacent to each other in a second direction. Dummy wirings are arranged between the first wirings and the second wiring at crossing points between first virtual linear lines extending in a third direction and second virtual linear lines extending in a fourth direction. The third and fourth directions are neither parallel nor orthogonal to the first and second directions. The dummy wirings have a first, a second, and a third dummy wiring. Centers of the second and third dummy wirings are nearest to a center of the first dummy wiring relative to others of the dummy wirings. The respective centers of the first, second, and third dummy wirings are aligned on a third virtual linear line extending in a fifth direction neither parallel to nor perpendicular to the first and second directions.

Semiconductor device

Semiconductor device, method for manufacturing the same, method for generating mask data, mask and computer readable recording medium

A semiconductor device has first wiring layers and a plurality of dummy wiring layers that are provided on the same level as the first wiring layers. The semiconductor device defines a row direction, and first virtual linear lines extending in a direction traversing the row direction. The row direction and the first virtual linear lines define an angle of 2-40 degrees, and the dummy wiring layers are disposed in a manner to be located on the first virtual linear lines. The semiconductor device also defines a column direction perpendicular to the row direction, and second virtual linear lines extending in a direction traversing the column direction. The column direction and the second virtual linear lines define an angle of 2-40 degrees, and the dummy wiring layers are disposed in a manner to be located on the second virtual linear lines.

A multilayer semiconductor device includes first wirings extending in a first direction adjacent to each other in a second direction. Dummy wirings are arranged between the first wirings and a second wiring at crossing points between first virtual linear lines extending in a third direction and second virtual linear lines extending in a fourth direction. The dummy wirings have a first dummy wiring, a second dummy wiring, a third dummy wiring, a fourth dummy wiring, and a fifth dummy wiring. When the dummy wirings are rotated around a center of the first dummy wiring through 90 degrees, centers of the second, third, fourth, and fifth dummy wirings are aligned with centers of the fourth, fifth, third, and second dummy wirings prior to being rotated.

A semiconductor device has first wiring layersand a plurality of dummy wiring layersthat are provided on the same level as the first wiring layers. The semiconductor device defines a row direction, and first virtual linear lines Lextending in a direction traversing the row direction. The row direction and the first virtual linear lines Ldefine an angle of 2-40 degrees, and the dummy wiring layersare disposed in a manner to be located on the first virtual linear lines L. The semiconductor device also defines a column direction perpendicular to the row direction, and second virtual linear lines Lextending in a direction traversing the column direction. The column direction and the second virtual linear lines Ldefine an angle of 2-40 degrees, and the dummy wiring layersare disposed in a manner to be located on the second virtual linear lines L

Semiconductor device having dummy wiring layers and a method for manufacturing the same

A semiconductor device has first wiring layersand a plurality of dummy wiring layersthat are provided on the same level as the first wiring layersThe semiconductor device defines a row direction, and first virtual linear lines Lextending in a direction traversing the row direction. The row direction and the first virtual linear lines Ldefine an angle of 2-40 degrees, and the dummy wiring layersare disposed in a manner to be located on the first virtual linear lines LThe semiconductor device also defines a column direction perpendicular to the row direction, and second virtual linear lines Lextending in a direction traversing the column direction. The column direction and the second virtual linear lines Ldefine an angle of 2-40 degrees, and the dummy wiring layersare disposed in a manner to be located on the second virtual linear lines L

A semiconductor device includes a silicon substrate having a trench isolation region . A plurality of dummy convex regions are formed in the trench isolation region . The trench isolation region defines a row direction and a column direction. Also, the trench isolation region define first virtual linear lines L that extend in a direction traversing the row direction and second virtual linear lines L that extend in a direction traversing the column direction. The first virtual linear lines L and the row direction define an angle of 2-40 degree, and the second virtual linear lines L and the column direction define an angle of 2-40 degree. The dummy convex regions are disposed on the first virtual linear lines L and the second virtual linear lines L

Semiconductor device and method for manufacturing the same including forming a plurality of dummy convex regions on a matrix with a virtual linear line defining an angle

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Isahaya, Japan

Kei Kawahara