Mitsubishi Electric Corporation

Kei Hayashi

Kazuaki Hiyama

Yuji Imoto

Yosuke Nakata

Tatsuya Kawase

Kentaro Yoshida

Hiroya Sannai

A semiconductor device according to the disclosure includes a first semiconductor chip, a second semiconductor chip, a first metal plate provided on an upper surface of the first semiconductor chip, a second metal plate provided on an upper surface of the second semiconductor chip and a sealing resin covering the first semiconductor chip, the second semiconductor chip, the first metal plate and the second metal plate, wherein a groove is formed in the sealing resin, the groove extending downwards from an upper surface of the sealing resin, the first metal plate includes, at an end facing the second metal plate, a first exposed portion exposed from a side face of the sealing resin forming the groove, and the second metal plate includes, at an end facing the first metal plate, a second exposed portion exposed from a side face of the sealing resin forming the groove.

Semiconductor package with a plurality of chips having a groove in the encapsulation

A semiconductor device includes a semiconductor switching element, a correction current voltage generation circuit, a voltage dividing circuit, an overcurrent protection circuit, and a drive circuit. The switching element is capable of outputting a sense current from its sense terminal. A sense resistor receives the sense current from the sense terminal and produces a sense voltage. The correction current voltage generation circuit generates a correction voltage. The voltage dividing circuit can output a corrected sense voltage by performing resistance voltage dividing on the sense voltage and the correction voltage with resistors. The overcurrent protection circuit is supplied with the corrected sense voltage and outputs a halt signal to the drive circuit when the corrected sense voltage Vin is higher than a threshold voltage.

Semiconductor device

It is an object of the present invention to provide a buffer circuit that reduces a reverse voltage applied to transistors being a complementary pair during turn-on and turn-off. A buffer circuit is a buffer circuit that turns on and turns off a switching element and includes a drive-side element that has an end connected to a base of a drive transistor and a sink-side element that has an end connected to a base of a sink transistor. The drive-side element and the sink-side element are respectively a drive-side diode and a sink-side diode, or a drive-side capacitor and a sink-side capacitor.

Growing community of inventors

Tokyo, Japan

Kei Hayashi