Kabushiki Kaisha Toshiba

Ntn Corporation

Tomoegawa Paper Co., Inc.

Tokyo Electron Limited

Toshiba Memory Corporation

Shibaura Engineering Works Co., Ltd.

Kei Hattori

Takuya Ishii

Isahiro Hasegawa

Takaya Matsushita

Tadao Matsunaga

Hajime Asada

Hiroshi Akai

Katsuya Okumura

Shinichi Ito

Seiji Morita

Soichi Inoue

Haruo Okano

Masao Ito

Masaru Hori

Yoshinori Ito

Akira Kobayashi

Makoto Sekine

Makoto Hasegawa

Naoya Hayamizu

Satoru Fukuzawa

Fumio Komatsu

Tatsuhiko Higashiki

Koichi Matsuno

Masaki Narita

Yoshifumi Tahara

Kazuo Hirose

Yukimasa Yoshida

Tomokazu Sonozaki

Keiji Fujita

Masato Shimoda

Takahito Nagamatsu

Katsuaki Aoki

Yasuhiro Kaga

Fumihiko Higuchi

Tomoaki Yoshimori

Ikuma Fujitsuka

Hidemi Kanetaka

Masaru Kasai

Makoto Muto

Masayuki Jinguuji

Michishige Aoyama

Toshiyasu Onoda

Mikio Nonaka

Yukihiro Oka

Tetsuya Kamigaki

A sliding member () includes an iron and steel-based sintered compact containing chromium, molybdenum, and carbon and having a content of chromium, of 5 mass % or less. The sliding member () includes: a compound layer () which has a sliding surface () and is formed mainly of an iron and steel nitride; and a diffusion layer () which is adjacent to the compound layer () and has an iron and steel structure into which nitrogen and carbon diffuse. The concentrations of carbon and nitrogen in the diffusion layer () are gradually reduced with increasing depth from the sliding surface ().

Sliding member and method for producing same

A waveguide tube slot antenna () includes a waveguide tube () that is made of a resin and includes a waveguide () extending in a tube axis direction; and a plurality of radiating slots () provided in the waveguide tube (). The waveguide tube () includes first and second waveguide tube forming members (and) each having a traverse section having a shape with an end at each part in an extending direction of the waveguide (), and is configured to define the waveguide () by being coupled to each other. The waveguide tube slot antenna () includes metal cores () disposed along the tube axis direction, and the metal cores () are held by both the waveguide tube forming members (and).

Waveguide slot antenna and method for producing same

A transverse internal gear pumphaving a trochoid, in which an inner rotorhaving a plurality of outer teeth is rotatably accommodated within an outer rotorhaving a plurality of inner teeth, the inner rotor being rotatably accommodated within the outer rotor in an eccentric state and with the outer teeth and the inner teeth meshing, and in which an intake-side volume chamber for taking in a liquid and an ejection-side volume chamber for ejecting liquid taken into the intake-side volume chamber are formed between the inner teeth and the outer teeth; a liquid intake nozzleextending in a non-perpendicular direction with respect to the trochoid rotation surfaces and having a distal end immersed in a liquid reservoir; a pump casingin which a recessed portionfor accommodating the trochoid is formed; and a pump cover

Transverse internal gear pump

A semiconductor memory device includes a stacked body including a first electrode layer and a second electrode layer stacked on the first electrode layer, and first and second interconnections on a first surface of the stacked body. The first and second electrode layers have first and second end surfaces respectively in the first surface. The first interconnection is electrically connected to the first electrode layer through a first region of the first end surface; and the second interconnection is electrically connected to the second electrode layer through a second region of the second end surface. The first and second interconnections extend in a first direction on the first surface. The first and second regions are arranged in a second direction crossing the first direction with a crossing angle smaller than 90 degrees. The first region and the second region each have a boundary along the second direction.

Semiconductor memory device and method for manufacturing same

Provided is an internal gear pump requiring fewer machining steps, allowing inexpensive manufacture, and offering high safety from the standpoint of function. The internal gear pumpcomprises: a trochoidin which an inner rotorhaving a plurality of outer teeth is eccentrically and rotatably accommodated in an outer rotorhaving a plurality of inner teeth, the outer teeth meshing with the inner teeth, and in which a suction-side chamber for suctioning liquid and a discharge-side chamber for discharging liquid that has been suctioned into the suction-side chamber are formed in between the inner teeth and outer teeth; a casingin which is formed a recessfor accommodating the trochoid; and a coverfor closing off the recessof the casing. At least some of the casingis a body injection-molded from a resin composition. The invention also comprises a groovein a portion of the recessof the casingin which the outer periphery is sealed, with a sealing ringinstalled therein, and bushingsmade from sintered metal that are provided integrally during injection molding in bolt fixing hole portions.

Internal gear pump

A radial sliding bearing provided with a sliding bearing (), an inner ring (), and an outer ring (), the inner ring () is made of melt-cast metal and the outer ring () being constituted by an article molded from a resin composition, the inner ring () comprising a concavely curved surface () on part of the axial direction of the outer circumference and a bearing hole () for mating with a support shaft on the inner circumference, the outer ring () having a convexly curved surface () that contacts and slides against the concavely curved surface () on the outer circumference of the inner ring () along part of the axial direction of the inner circumference, and the inner ring () and the outer ring () relatively rotating without contacting each other apart from the contact between the convexly curved surface and the concavely curved surface.

Sliding bearing and image forming apparatus

An ion implantation apparatus according to an embodiment includes an ion implantation unit, a position detection unit, a charge supply unit, a current value detection unit, and a determination unit. The ion implantation unit scans the surface of a substrate with an ion beam containing positively charged ions and implants the ions into the substrate. The position detection unit detects the scan position of the ion beam on the substrate. The charge supply unit generates a plasma, emits electrons contained in the plasma, and supplies the electrons to the substrate. The current value detection unit detects a current value that changes in accordance with the amount of electrons emitted by the charge supply unit. The determination unit determines the charge build-up state of the substrate based on a change in the current value, the change being accompanied by a change in the scan position.

Ion implantation apparatus and method of determining state of ion implantation apparatus

A surface treatment method includes: removing a fluorocarbon-containing reaction product from a surface of a workpiece by oxygen gas plasma processing. The workpiece includes a plurality of layers. The fluorocarbon-containing reaction product is deposited by successively etching the layers of the workpiece. The method further includes after removing the reaction product, removing an oxide-containing reaction product from the surface of the workpiece using hydrogen fluoride gas.

Surface treatment method, etching method, and method for manufacturing electronic device

A semiconductor processing apparatus includes a load chamber, an unload chamber, a common transfer chamber, a first process chamber, and a second process chamber, which are connected via gate valves. The load and unload chambers are connected to a first vacuum-exhaust mechanism including a common dry pump. The common transfer chamber is connected to a second vacuum-exhaust mechanism including a dry pump. The first and second processes chambers are connected to a third vacuum-exhaust mechanism including a common dry pump, and first and second turbo molecular pumps. The processing apparatus includes a controller which can drive and stop the dry pumps independently of each other in coordination with open/closed switching of the gate valves, while keeping the turbo molecular pumps driven.

Plasma processing apparatus and method

The present invention is to provide an electrostatic chucking device having improved heat conductivity and at the same time increased adsorption area and improved adsorptity as well as having no uneveness on the wafer-provided face. The electrostatic chucking device of the present invention comprises a metal base, an adhesive layer, an electrode layer comprising a metal-deposited or metal-plated layer, and an electrically insulating layer possessing a face for providing a substance to be adhered by suction, laminated thereon in this order. The electrostatic chucking device is produced by a process comprising a stage for forming a metal-deposited or metal-plated layer on one face of a heat resistant film, a stage for providing a photoresist layer on the surface of the electrode layer, carrying out pattern exposure, development, and an etching processing, a stage for forming a semi-cured adhesive layer on the surface of the etched electrode layer, a stage for punching the formed laminated sheet according to the shape of a metal base, and stage for laminating the metal base and the laminate sheet via the above-mentioned adhesive and curing the laminated product.

Electrostatic chucking device

A metal film etching method etches selectively a metal film formed on a layer insulating film provided with viaholes so as to cover the surface of the layer insulating film and fill up the viaholes so that the metal film excluding portions there of filling up the viaholes are removed completely without forming a pit in the portions of the metal film filling up the viaholes. The metal film etching method uses a mixed reactive gas of a gas containing fluorine atoms, a gas containing chlorine atoms and oxygen gas.

Metal film etching method

According to this invention, a dry etching method includes the step of sequentially forming an SiO.sub.2 film, an Al--Si--Cu thin film, and a photoresist on an Si substrate to sequentially form a mask pattern, the step of etching the Al--Si--Cu thin film by RIE using a gas mixture of Cl.sub.2 and BCl.sub.3 as an etching gas, and the step of removing etching residues by a sputter effect obtained by the plasma of the BCl.sub.3 gas.

Dry etching method

Disclosed is an electrostatic chucking method, comprising the steps of: (a) placing a substrate to be chucked electrostatically on a chucking material containing an electrode; (b) chucking the substrate to the chucking material by supplying a predetermined electrical potential to the electrode in the chucking material; (c) removing the substrate from the chucking material; and (d) eliminating residual charges on the chucking material by sputtering it with a plasma gas for a predetermined period. Further, the plasma gas may be capable of etching the chucking material.

Electrostatic chucking method

A pattern profile measuring method and apparatus for measuring the profile of a measuring portion of a pattern of a specimen placed on a specimen stage by controlling a deflector of a scanning electron microscope capable of setting a desired inclination angle of one of the specimen stage and an electron optical column, applying an electron beam to the measuring portion of the specimen, and image processing a secondary electron signal from the measuring portion. The method comprises: a first step of calculating the distance at the bottom portion of the measuring portion of the pattern by image processing the secondary electron signal when the electron beam is applied to the measuring portion at an inclination angle of zero; a second step of obtaining the number of pixels at a taper portion of the measuring portion of the pattern by image processing the secondary electron signal when the electron beam is applied to the measuring portion at a first predetermined inclination angle; a third step of obtaining the number of pixels at the taper portion by image processing the secondary electron signal when the electron beam is applied to the measuring portion at a second predetermined inclination angle different from the first inclination angle; a fourth step of calculating the taper angle and depth of the pattern in accordance with the numbers of pixels of the taper portion obtained at the second and third steps and the first and second predetermined inclination angles; and a fifth step of obtaining the profile of the taper portion in accordance with the strength change of the secondary electron signal from the taper portion.

Method of and apparatus for measuring pattern profile

Growing community of inventors

Mie, Japan

Kei Hattori