Mitsubishi Denki Kabushiki Kaisha

Honda Motor Co., Ltd.

Kei Goto

Akira Inoue

Yoshihiro Notani

Yasuharu Nakajima

Yukio Ohta

Hiroto Matsubayashi

Yusuke Inoue

Takayuki Katoh

Tomoya Matsuo

Hiroto Matubayashi

A vehicle body frame manufactured by welding is configured for weight reduction, and includes first and second frame members. The first frame member has a predetermined thickness including a first flat surface portion wider than the predetermined thickness. The second frame member includes a second flat surface portion touching the first flat surface portion. The first and second frame members are joined by bringing the flat surface portions together and welding the first and second flat surface portions together with laser beams parallel to the first flat surface portion. In this way, the laser welding can be performed with a reduced gap between the two members. Welding using laser beams applied from directions parallel to the flat surfaces allows the weld area to be significantly larger than conventional fillet welding.

Vehicle body frame for a saddle-ride vehicle, and motorcycle including same

An integrated circuit device includes a substrate, circuit elements on the substrate, and an electrically conductive thermoplastic resin substance electrically connecting the circuit elements on the substrate. Therefore, since variations in the configuration of the thermoplastic resin are quite small relative to those of interconnecting wires, variation in parasitic inductance due to variation in the configuration of the connections is reduced and the uniformity and the reproducibility of the high frequency characteristics of the integrated circuit device are enhanced. A method for fabricating an integrated circuit device includes forming circuit elements on a substrate and forming an electrically conducting thermoplastic resin substance electrically connecting the circuit elements.

Integrated circuit device and fabricating thereof

The method for mounting a semiconductor chip comprises disposing conductive thermoplastic polyimide as a bonding material between an inner lead of the TAB tape and an external connecting electrode of the semiconductor chip, applying pressure to the conductive thermoplastic polyimide by a wedge with heating by a hot stage via the semiconductor chip. The semiconductor chip comprises the external connecting electrode adhered the conductive thermoplastic polyimide. The method for fabricating the semiconductor chip comprises forming a signal line and a protective film, forming an electrode pad on the signal line not provided the protective film, forming a conductive thermoplastic polyimide layer on the semiconductor wafer by spin coating, forming a resist on the conductive thermoplastic polyimide layer and performing an etching with using the resist as a mask. The inner lead of the TAB tape is made of conductive thermoplastic polyimide, not gilded. The flip-chip mounting substrate comprises a semiconductor chip connecting electrode comprising a signal line made of conductive thermoplastic polyimide, a protective film protecting the signal line, and adhering conductive thermoplastic polyimide on the signal line not providing the protective film. The microwave device comprises mounting the semiconductor chip in the inner lead of the TAB tape by adhering the external connecting electrode of the semiconductor chip to the inner lead of the TAB tape. Therefore, it is not required using high cost material for mounting the semiconductor chip, so that reducing in cost is accomplished.

Tab tape and semiconductor chip mounted on tab tape

An integrated circuit device includes a substrate; circuit elements including an active element and a bias line for applying a DC bias voltage to the active element, disposed on the substrate; a thermoplastic material layer disposed on a region of the substrate; and a magnetic substance layer disposed on a region of the substrate including a region of the bias line, and adhered to and supported by the thermoplastic material layer. In this structure, the magnetic substance layer can be formed in an appropriate shape and at an appropriate position on the bias line according to the oscillation characteristics of the active element, such as a transistor, and the magnetic substance layer absorbs the frequency components of the oscillation of the active element, whereby oscillation of the active element is easily prevented. Further, since the magnetic substance layer is disposed on the bias line, unwanted increase in the chip area of the integrated circuit device due to the use of the prior art oscillation preventing circuit is avoided.

Integrated circuit device

A semiconductor device includes a substrate having a microwave semiconductor element, a microwave transmission line disposed on the substrate and electrically connected to the microwave semiconductor element, and a waveguide terminal structure disposed in the substrate and connected to an end of an external waveguide, wherein an end of a signal conductor of the microwave transmission line is included in the waveguide terminal structure. Input and output of microwave signals between the semiconductor device and an external device are carried out simply by applying an end of the external waveguide to the waveguide terminal structure. As a result, even when the substrate of the semiconductor device warps, an input-output characteristic evaluation of the semiconductor device is carried out with high stability. Further, the microwave signals are transmitted from the external waveguide directly to the microwave transmission line on the substrate or from the microwave transmission line directly to the external waveguide, thereby reducing transmission loss of the microwave signals.

Growing community of inventors

Tokyo, Japan

Kei Goto