Canon Kabushiki Kaisha

Conon Kabushiki Kaisha

Kei Fujita

Mineo Shimotsusa

Yukihiro Hayakawa

Seiji Kamei

Kenji Makino

Yutaka Akino

Shigeyuki Matsumoto

Hiroshi Yuzurihara

Hideshi Kuwabara

Tetsuo Asaba

Yutaka Yuge

Asao Saito

Yuzo Kataoka

Toshihiko Ichise

Yasuhiro Naruse

Yoshiyuki Imanaka

Junichi Kobayashi

Takayuki Yagi

Masahiro Takizawa

Takaaki Yamaguchi

Takuya Hatsui

Souta Takeuchi

Muga Mochizuki

Kousuke Kubo

Yasuhiro Sekine

Yasushi Matsuno

Masaru Sakamoto

Hiraku Kozuka

Makoto Terui

Hiroyuki Nakamura

Genzo Momma

Fumio Murooka

Takashi Morii

Yasushi Kawasumi

Genzo Monma

Shunichi Kaizu

Hiroshi Nakano

Yashiro Naruse

Yuzo Kayaoka

A semiconductor device in which electro-thermal conversion elements and switching devices for flowing currents through the elements are integrated on a first conductive type semiconductor substrate. The switching devices are insulated gate type field effect transistors having a second conductive type first semiconductor region on one principal surface of the semiconductor substrate; a first conductive type second semiconductor region for supplying a channel region and for adjoining the first semiconductor region; a second conductive type source region on the surface of the second semiconductor region; a second conductive type drain region on the surface of the first semiconductor region; and gate electrodes on the channel region with a gate insulator film between them. The second semiconductor region is formed by a semiconductor having an impurity concentration higher than that of the first semiconductor region, and is disposed between two adjacent drain regions, separating them in a traverse direction.

Semiconductor device, method for manufacturing the same, and liquid jet apparatus

In a case where first wirings (wirings for a driving power supply (VH)) commonly connected to a plurality of electro-thermal converting elements and adapted to supply an electric power to the plurality of electro-thermal converting elements and second wirings (high voltage grounding wirings (GNDH)) for connecting source areas of respective switching elements to grounding potential are provided, resistance of the second wiring is selected to be smaller than resistance of the first wiring.

Substrate for ink jet recording head, ink jet recording head and ink jet recording apparatus using ink jet recording head

A semiconductor device having a plurality of electrothermal conversion elements and a plurality of switching elements for flowing current through the electrothermal conversion elements, respectively formed on a semiconductor substrate of a first conductivity type, wherein each of the switching elements is an insulated gate field effect transistor including: a first semiconductor region of a second conductivity type opposite to the first conductivity type, the first semiconductor region being formed on a principal surface of the semiconductor substrate, a second semiconductor region of the first conductivity type for providing a channel region, the second semiconductor region being formed adjacent to the first semiconductor region, a source region of the second conductivity type formed in a surface layer of the second semiconductor region, a drain region of the second conductivity type formed in a surface layer of the first semiconductor region, and a gate electrode formed on a gate insulating film on the channel region, and a resistivity of the semiconductor substrate is 5 to 18 &#x3a9;cm, and the first semiconductor region has a depth of 2.0 to 2.2 &#x3bc;m along a depth direction of the semiconductor substrate and an impurity concentration of 1&#xd7;10to 1&#xd7;10/cm.

Semiconductor device and liquid jetting device using the same

To provide a substrate unit for liquid discharging head, a method for producing the same, a liquid discharging head, a cartridge, and an image forming apparatus. The substrate unit for liquid discharging head is for a head which gives thermal energy to the liquid for film boiling, to discharge droplets of the liquid from its discharge port. The substrate unit includes an electrothermal transducer provided on the substrate surface to generate thermal energy, a pair of electrode wiring circuits provided on the substrate surface and connected to the transducer, first protective layer formed over the substantially entire surface of the substrate to cover a pair of the electrode wiring circuits and transducer, and second protective layer formed over the first protective layer to cover the transducer and the area where the transducer is connected to the wiring circuit, in which a pair of the electrode wiring circuits are 1800 to 2400 &angst; thick, and the portion of the first protective layer covered by the second protective layer is 2600 to 3400 &angst; thick and thicker than the portion of the first protective layer not covered by the second protective layer.

Substrate unit for liquid discharging head, method for producing the same, liquid discharging head, cartridge, and image forming apparatus

The invention provides a method of producing a through-hole, a substrate used to produce a through-hole, a substrate having a through-hole, and a device using such a through-hole or a substrate having such a through-hole, which are characterized in that: a through-hole can be produced only by etching a silicon substrate from its back side; the opening length d can be precisely controlled to a desired value regardless of the variations in the silicon wafer thickness, and the orientation flat angle, and also regardless of the type of a silicon crystal orientation-dependent anisotropic etchant employed; high productivity, high production reproducibility, and ease of production can be achieved; a high-liberality can be achieved in the shape of the opening end even if temperature treatment is performed at a high temperature for a long time; and a high-precision through-hole can be produced regardless of the shape of a device formed on the surface of a substrate.

Method of producing a through-hole, silicon substrate having a

An insulating film is formed on the surface of the base of a semiconductor, and a portion of the insulating film is removed to cause the surface to appear outside. The exposed surface is terminated with hydrogen, and then energy beams are applied to selectively remove the terminating hydrogen. Metal is selectively deposited on the portion terminated with left hydrogen atoms.

Manufacturing method of a semiconductor apparatus having an electron

A recording head comprises electrothermal transducers for jetting ink and functional devices for driving these electrothermal transducers, both of which are arranged on a single substrate plate. The functional devices comprise a pair of major electrode regions such as drain and source regions arranged on the substrate plate, a region comprising control electrode region and surrounding one of electrode regions used to be grounded, an insulating layer arranged on the control electrode region and a control electrode arranged on the insulating layer. The control layer alters the semiconductor types of a boundary surface of the control electrode region by applying a control voltage through the insulating layer and as a result a current flow between major electrode regions, source and drain, is controlled.

Ink jet recording system having improved functional devices for driving

A method of fabricating semiconductor devices comprises the following process of: forming an electrode leading out window having its vertical side wall at a given position in the functional element formed on a semiconductor substrate; forming an insulating film on the surface of the side wall; and depositing an electrode metal in the leading out window.

Method of fabricating a semiconductor device having an insulating side

A method for manufacturing a mask ROM by first forming a contact hole with a semiconductor within. A surface treatment is then applied to supply by hydrogen atoms to the surface of the semiconductor. The contact hole is selectively irradiated with energy beams so as to produce an irradiated contact hole and a non-irradiated contact hole. In the non-irradiated contact hole a conductive or semiconductor thin film is formed and a circuit formed on the conductive or semiconductor thin film. The circuit and the non-irradiated hole are connected to each other and the irradiated hole and the circuit are insulated from each other.

Method of manufacturing a ROM device having contact holes treated with

Method of forming metal pattern including a schottky diode

A recording head for discharging ink by using thermal energy comprises a plurality of outlets for discharging ink and a substrate including a common substrate plate of P type, a plurality of electrothermal converting elements and a plurality of functional elements connected to the respective electrothermal converting elements and formed on the common substrate plate as well as the electrothermal converting elements. Each of the functional elements has a first semiconductor region of N type, a second semiconductor region of P type provided within the first semiconductor region and a third semiconductor region of N type provided within the second semiconductor region, so as to form a rectifying junction. The first, second and third semiconductor regions are formed by diffusion of impurity atoms in the common semiconductor substrate plate.

Method of forming an ink jet recording device, and head using same

Method of forming a capacitor having contact hole treated with hydrogen

A semiconductor device has transistors, each transistor having a first conduction type of a first semiconductor region including a first main electrode region, a second conduction type of second semiconductor region including a channel region which is provided in the first semiconductor region, a second main electrode region provided in the second semiconductor region, a gate electrode on the channel region extending through a gate insulating film between the first and second main electrode regions. A portion of the first main electrode region which contacts the channel region is a high-resistance region. The semiconductor device also has buried-type element isolation regions which prevent the occurrence of latch up and bird's beaks in the device.

Semiconductor device for driving heat generator

A method for producing a substrate for a recording head wherein a plurality of electro-thermal converting elements, a plurality of driving functional elements for respectively driving the electro-thermal converting elements and a plurality of wiring electrodes for respectively connecting each of the driving functional elements and each of the electro-thermal converting elements are formed on a supporting member by photolithography comprises forming the wiring electrodes by etching a material layer for the wiring electrodes while etchingwise removing a photoresist for masking the material layer for the wiring electrodes.

Substrate for recording head, recording head and method for producing

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Sagamihara, Japan

Kei Fujita