Sumitomo Electric Industries, Limited

Kei Fujii

Katsushi Akita

Takashi Ishizuka

Youichi Nagai

Hideaki Nakahata

Hiroshi Inada

Yasuhiro Iguchi

Kaoru Shibata

Takashi Kyono

Takamichi Sumitomo

Koji Nishizuka

Suguru Arikata

Masaki Ueno

Yusuke Yoshizumi

Yohei Enya

Hiroki Mori

Takeshi Aoki

Susumu Yoshimoto

Tatsuya Tanabe

Kouhei Miura

Toshiyuki Tanahashi

A vertical cavity surface-emitting laser configured to emit laser light having a wavelength of 830 nm to 910 nm includes a substrate having a main surface including GaAs, a first distributed Bragg reflector, an active layer, and a second distributed Bragg reflector. The substrate, the first distributed Bragg reflector, the active layer, and the second distributed Bragg reflector are arranged in a first axis direction intersecting the main surface. The main surface has an off angle of 6° or more with respect to a (100) plane. The active layer includes InAlGaAs (0<x<1, 0≤y<1). The active layer has a strain. An absolute value of the strain is 0.5% to 1.4%.

Vertical cavity surface-emitting laser

A vertical cavity surface emitting laser includes: an active layer including a quantum well structure including one or more well layers including a III-V compound semiconductor containing indium as a group III constituent element; an upper laminated region containing a carbon dopant; and a substrate for mounting a post including the active layer and the upper laminated region, in which the active layer is provided between the upper laminated region and the substrate, the quantum well structure has a carbon concentration of 2&#xd7;10cmor less, and the upper laminated region includes a pile-up layer of indium at a position away from the active layer.

Vertical cavity surface emitting laser and method for manufacturing vertical cavity surface emitting laser

A vertical cavity surface emitting laser includes: a supporting base having a principal surface including III-V compound semiconductor containing gallium and arsenic as constituent elements; and a post disposed on the principal surface. The post has a lower spacer region including a III-V compound semiconductor containing gallium and arsenic as group-III elements, and an active layer having a quantum well structure disposed on the lower spacer region. The quantum well structure has a concentration of carbon in a range of 2&#xd7;10cmor more to 5&#xd7;10cmor less. The quantum well structure includes a well layer and a barrier layer. The well layer includes a III-V compound semiconductor containing indium as a group-III element, and the barrier layer includes a III-V compound semiconductor containing indium and aluminum as group-III elements. The lower spacer region is disposed between the supporting base and the active layer.

Vertical cavity surface emitting laser, method for fabricating vertical cavity surface emitting laser

A semiconductor layered structure includes a substrate formed of a III-V compound semiconductor, a buffer layer disposed on and in contact with the substrate and formed of a III-V compound semiconductor, and a quantum well layer disposed on and in contact with the buffer layer and including a plurality of component layers formed of III-V compound semiconductors. The substrate has a diameter of 55 mm or more. At least one of the component layers is formed of a mixed crystal of three or more elements. When the compound semiconductor forming the substrate has a lattice constant d, the compound semiconductor forming the buffer layer has a lattice constant d, and the compound semiconductors forming the quantum well layer have an average lattice constant d, (d&#x2212;d)/dis &#x2212;3&#xd7;10or more and 3&#xd7;10or less, and (d&#x2212;d)/dis &#x2212;3&#xd7;10or more and 3&#xd7;10or less.

Semiconductor layered structure, method for producing semiconductor layered structure, and method for producing semiconductor device

Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor deviceincludes an absorption layerof a type II (GaAsSb/InGaAs) MQW structure located on an InP substrate, and an InP contact layerlocated on the MQW structure. In the MQW structure, a composition x (%) of GaAsSb is not smaller than 44%, a thickness z (nm) thereof is not smaller than 3 nm, and z&#x2267;&#x2212;0.4x+24.6 is satisfied.

Semiconductor device, optical sensor device and semiconductor device manufacturing method

An epitaxial wafer which allows manufacture of a photodiode having suppressed dark current and ensured sensitivity, and a method for manufacturing the epitaxial wafer, are provided. The epitaxial wafer of the present invention includes: a III-V semiconductor substrate; and a multiple quantum well structure disposed on the substrate, and including a plurality of pairs of a first layer and a second layer. The total concentration of elements contained as impurities in the multiple quantum well structure is less than or equal to 5&#xd7;10cm.

Epitaxial wafer and method for manufacturing same

An epitaxial wafer of the present invention includes a substrate composed of a III-V compound semiconductor, a multiple quantum well structure composed of a III-V compound semiconductor and located on the substrate, and a top layer composed of a III-V compound semiconductor and located on the multiple quantum well structure. The substrate has a plane orientation of (100) and an off angle of &#x2212;0.030&#xb0; or more and +0.030&#xb0; or less, and a surface of the top layer has a root-mean-square roughness of less than 10 nm.

Epitaxial wafer, method for producing the same, semiconductor element, and optical sensor device

A semiconductor device and the like having high quantum efficiency or high sensitivity in a near-infrared to infrared region is provided. The semiconductor device includes: a substrate; a multiple quantum well structure disposed on the substrate, and including a plurality of pairs of a layer a and a layer b; and a crystal-adjusting layer disposed between the substrate and the multiple quantum well structure. The crystal-adjusting layer includes a first adjusting layer which is made of the same material as the substrate and is in contact with the substrate, and a second adjusting layer which is made of the same material as the layer a or the layer b of the multiple quantum well structure and is in contact with the multiple quantum well structure.

Semiconductor device and method for manufacturing the same

A method for producing a semiconductor element includes a step of forming a multiple quantum well in which a GaSb layer and an InAs layer are alternately stacked on a GaSb substrate by MOVPE, wherein, in the step of forming a multiple quantum well, an InSb film is formed on at least one of a lower-surface side and an upper-surface side of the InAs layer so as to be in contact with the InAs layer.

Semiconductor element and method for producing the same

A photodiode and the like capable of preventing the responsivity on the short wavelength side from deteriorating while totally improving the responsivity in a type II MQW structure, is provided. The photodiode is formed on a group III-V compound semiconductor substrate, and includes a pixel. The photodiode includes an absorption layer of a type II MQW structure, which is located on the substrate. The MQW structure includes fifty or more pairs of two different types of group III-V compound semiconductor layers. The thickness of one of the two different types of group III-V compound semiconductor layers, which layer has a higher potential of a valence band, is thinner than the thickness of the other layer.

Photodiode, optical sensor device, and photodiode manufacturing method

A method for producing an epitaxial wafer includes a step of growing an epitaxial layer structure on a III-V semiconductor substrate, the epitaxial layer structure including a III-V semiconductor multiple-quantum well and a III-V semiconductor surface layer, wherein the step of growing the epitaxial layer structure on the substrate is performed such that a lattice mismatch &#x394;&#x3c9; of the multiple-quantum well with respect to the substrate satisfies a range of &#x2212;0.13%&#x2266;&#x394;&#x3c9;&#x3c;0% or 0%&#x3c;&#x394;&#x3c9;&#x2266;+0.13%, the range having a center displaced from zero, and an X-ray rocking curve in a zero-order diffraction peak derived from the multiple-quantum well has a full width at half maximum (FWHM) of 30 seconds or less.

Epitaxial wafer, method for producing the same, photodiode, and optical sensor device

An object of the present invention is to provide a group III-V compound semiconductor photo detector comprising an absorption layer having a group III-V compound semiconductor layer containing Sb as a group V constituent element, and an n-type InP window layer, resulting in reduced dark current. The InP layergrown on the absorption layercontains antimony as impurity, due to the memory effect with antimony which is supplied during the growth of a GaAsSb layer of the absorption layer. In the group III-V compound semiconductor photo detector, the InP layercontains antimony as impurity and is doped with silicon as n-type dopant. Although antimony impurities in the InP layergenerate holes, the silicon contained in the InP layercompensates for the generated carriers. As a result, the second portionof the InP layerhas sufficient n-type conductivity.

Group III-V compound semiconductor photo detector, method of fabricating group III-V compound semiconductor photo detector, photo detector, and epitaxial wafer

Provided are an epitaxial wafer, a photodiode, and the like that include an antimony-containing layer and can be efficiently produced such that protruding surface defects causing a decrease in the yield can be reduced and impurity contamination causing degradation of the performance can be suppressed. The production method includes a step of growing an antimony (Sb)-containing layer on a substrateby metal-organic vapor phase epitaxy using only metal-organic sources; and a step of growing, on the antimony-containing layer, an antimony-free layer including a window layer, wherein, from the growth of the antimony-containing layer to completion of the growth of the window layer, the growth is performed at a growth temperature of 425&#xb0; C. or more and 525&#xb0; C. or less.

Epitaxial wafer, photodiode, optical sensor device, and methods for producing epitaxial wafer and photodiode

A semiconductor device includes a semiconductor layer laminate in which a plurality of semiconductor layers are laminated, the semiconductor layer laminate including a light receiving layer, the light receiving layer being grown by a metal-organic vapor phase epitaxy method, the light receiving layer having a cutoff wavelength of more than or equal to 3 &#x3bc;m and less than or equal to 8 &#x3bc;m, the semiconductor device having a dark current density of less than or equal to 1&#xd7;10A/cmwhen a reverse bias voltage of 60 mV is applied at a temperature of &#x2212;140&#xb0; C. Thereby, a semiconductor device which can receive light in a mid-infrared range and has a low dark current is provided.

Semiconductor device

Provided are a semiconductor device and an optical sensor device, each having reduced dark current, and detectivity extended toward longer wavelengths in the near-infrared. Further, a method for manufacturing the semiconductor device is provided. The semiconductor deviceincludes an absorption layerof a type II (GaAsSb/InGaAs) MQW structure located on an InP substrate, and an InP contact layerlocated on the MQW structure. In the MQW structure, a composition x (%) of GaAsSb is not smaller than 44%, a thickness z (nm) thereof is not smaller than 3 nm, and z&#x2267;&#x2212;0.4+24.6 is satisfied.

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Itami, Japan

Kei Fujii