Dai Nippon Printing Co., Ltd.

Kei Amagai

Katsuya Sakayori

Toshiyuki Sakai

Toshimasa Takarabe

Aki Kimura

Satoru Kanke

Kazunori Oda

Koji Ichimura

Keita Arihara

Shunji Fukuda

Takeshi Sekiguchi

Makoto Mizoshiri

Megumi Ooishi

Kenzaburou Kawai

Kurumi Hashimoto

Tomoki Sasou

A resin composition including an olefin resin, an alkenyl-containing alkoxy silane compound, and at least one inorganic filler selected from the group consisting of titanium oxide, alumina, talc, clay, aluminum, aluminum hydroxide, mica, iron oxide, graphite, carbon black, calcium carbonate, zinc sulfide, zinc oxide, barium sulfate, and potassium titanate; a reflector using the resin composition; a reflector-bearing lead frame; and a semiconductor light-emitting device. Accordingly, provided by the present invention are: a resin composition capable of expressing an excellent heat resistance (especially heat distortion resistance) even when it is made to a formed body; a reflector using the resin composition; a reflector-bearing lead frame; and a semiconductor light-emitting device.

Resin composition, reflector, lead frame with reflector, and semiconductor light-emitting device

A semiconductor light-emitting device including at least a substrate, a reflector having a concave cavity, and an optical semiconductor element, wherein the reflector is formed of a resin composition containing an inorganic substance; in a spectrum obtained when the reflector is measured by an X-ray diffraction method using CuK&#x3b1; radiation (wavelength=1.5418 A), an intensity ratio (P1/P2) of a peak intensity P1 of the highest intensity diffraction peak in a range of diffraction angle 2&#x3b8; of 0&#xb0; to 24&#xb0; to the peak intensity P2 of the highest intensity diffraction peak in a range of diffraction angle 2&#x3b8; of more than 24&#xb0; to 70&#xb0; is 0.01 or more and 1.0 or less; and an ash content of the reflector is 60% by mass or more. A semiconductor light-emitting device and an optical-semiconductor-mounting substrate, including a reflector having an extremely high light reflection property and excellent dimensional stability.

Semiconductor light-emitting device and optical-semiconductor-mounting substrate

Provided are an electron beam curable resin composition including an olefin resin, a crosslinking agent, and a white pigment, in which the crosslinking agent has a saturated or unsaturated ring structure, at least one atom among atoms forming at least one ring is bonded to any allylic substituent of an allyl group, a methallyl group, an allyl group through a linking group, and a methallyl group through a linking group, and the white pigment is blended in an amount of more than 200 parts by mass and 500 parts by mass or less with respect to 100 parts by mass of olefin resin, a reflector resin frame using the resin composition, a reflector, a semiconductor light-emitting device, and a molding method using the resin composition.

Electron beam curable resin composition, reflector resin frame, reflector, semiconductor light-emitting device, and molded article production method

Disclosed is a substrate for a flexible device which, when a TFT is produced on a flexible substrate in which a metal layer and a polyimide layer are laminated, can suppress deterioration of the electrical performance of the TFT due to the surface irregularities of the metal foil surface and can suppress detachment or cracks of the TFT. Also disclosed is a substrate for a thin film element which has excellent surface smoothness and is capable of suppressing deterioration of the characteristics of thin film elements. Also disclosed are methods for manufacturing substrates for thin film elements.

Substrate for flexible device, thin film transistor substrate for flexible device, flexible device, substrate for thin film element, thin film element, thin film transistor, method for manufacturing substrate for thin film element, method for manufacturing thin film element, and method for manufacturing thin film transistor

Growing community of inventors

Tsukuba, Japan

Kei Amagai