Fujifilm Electronic Materials U.s.a., Inc.

Fujifilm Corporation

Keeyoung Park

Atsushi Mizutani

William A Wojtczak

Thomas Dory

Yasuo Sugishima

Tomonori Takahashi

Kazutaka Takahashi

Emil A Kneer

This disclosure relates to methods and compositions for treating a semiconductor substrate having a pattern disposed on a surface of the substrate. The methods can include a) supplying a sublimating material to a substrate having a pattern disposed on a surface thereof; b) maintaining the sublimating material on the surface for a time sufficient to modify the surface; c) solidifying the sublimating material on the surface; and d) removing by sublimation the sublimating material disposed on the surface.

Surface treatment compositions and methods

A treatment liquid contains orthoperiodic acid and water, and the pH is 11 or more. It is preferable that the content of orthoperiodic acid in the treatment liquid is 0.01% to 5% by mass with respect to the total mass of the treatment liquid.

Ruthenium removal composition and method of producing magnetoresistive random access memory

This disclosure relates to methods and compositions for treating a wafer having a pattern disposed on a surface of the wafer.

Methods of using surface treatment compositions

Surface treatment compositions and articles containing same

An object is to provide a ruthenium removal composition capable of dissolving Ru while suppressing dissolution of CoFeB, and a method of producing a magnetoresistive random access memory (MRAM) using the same. A ruthenium removal composition of the present invention contains orthoperiodic acid and water, and the pH is 11 or more. It is preferable that the content of orthoperiodic acid in the ruthenium removal composition is 0.01% to 5% by mass with respect to the total mass of the composition.

The present disclosure is directed to non-corrosive cleaning compositions that are useful primarily for removing residues (e.g., plasma etch and/or plasma ashing residues) and/or metal oxides from a semiconductor substrate as an intermediate step in a multistep manufacturing process.

Cleaning compositions and methods of use therefor

The disclosure provides methods and compositions therefor for treating a surface wherein a surface treatment layer is formed on the surface, thereby minimizing or preventing pattern collapse as the surface is subjected to typical cleaning steps in the semiconductor manufacturing process.

Surface treatment methods and compositions therefor

This disclosure relates to a cleaning composition that contains 1) at least one redox agent; 2) at least one organic solvent selected from the group consisting of water soluble alcohols, water soluble ketones, water soluble esters, and water soluble ethers; 3) at least one metal-containing additive; and 4) water.

Cleaning formulations for removing residues on semiconductor substrates

An object is to provide an MRAM dry etching residue removal composition capable of removing dry etching residues while suppressing damage to a substrate containing a specific metal in a step of producing an MRAM, a method of producing a magnetoresistive random access memory using the same, and a cobalt removal composition having excellent cobalt removability. The MRAM dry etching residue removal composition of the present invention contains a strong oxidizing agent and water. In addition, the cobalt removal composition of the present invention contains orthoperiodic acid and water.

MRAM dry etching residue removal composition, method of producing magnetoresistive random access memory, and cobalt removal composition

There is provided an etching liquid including nitric acid; a fluorine-containing compound; and a nitrogen-containing organic compound A containing a nitrogen atom, or a phosphorus-containing compound B.

Etching liquid, kit of same, etching method using same, method for producing semiconductor substrate product, and method for manufacturing semiconductor element

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Gilbert, AZ, United States of America

Keeyoung Park