Samsung Electronics Co., Ltd.

Keeyoung Jun

Sanghoon Ahn

Naein Lee

Byunghee Kim

Jongwon Hong

Thomas Oszinda

Taejin Yim

Jung-soo Yoon

Jaebeom Park

Minjong Kim

Choongrae Cho

Seonggil Park

Disclosed is a substrate processing apparatus. The substrate processing apparatus comprises a process chamber providing an inner space where a substrate is treated, a support unit disposed in the inner space and supporting the substrate, and a gas supply unit providing the inner space with a process gas required for generating plasma. The support unit comprises a base having a top surface on which the substrate is placed, a heater disposed in the base, and a coating layer formed on the top surface of the base.

Substrate processing apparatus

A method of treating a porous dielectric layer includes preparing a substrate on which the porous dielectric layer including an opening and pores exposed by the opening is formed, supplying a first precursor onto the substrate to form a first sub-sealing layer sealing the exposed pores, and supplying a second precursor onto the first sub-sealing layer to form a second sub-sealing layer covering the first sub-sealing layer. Each of the first and second precursors includes silicon, and a molecular weight of the second precursor is smaller than that of the first precursor.

Method of treating a porous dielectric layer and a method of fabricating a semiconductor device using the same

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Seongnam-si, South Korea

Keeyoung Jun