Samsung Electronics Co., Ltd.

International Business Machines Corporation

Keewon Kim

Sang Hwan Park

Youngman Jang

Minkyung Lee

Whankyun Kim

Kwangseok Kim

Jae Hoon Kim

Woojin Kim

Mahesh Govind Samant

Jaewoo Jeong

Joonmyoung Lee

Daehan Kim

Byeongtaek Bae

Yong Jong Park

Sechung Oh

Jaehoon Kim

Stuart S P Parkin

Hajin Lim

Soonoh Park

Da Il Eom

Dail Eom

S P Stuart Parkin

Minah Kang

SangHwan Park

Disclosed are an apparatus for and a method of manufacturing a semiconductor device. The apparatus includes a chamber, an evaporator that evaporates an organic source to provide a source gas on a substrate in the chamber, a vacuum pump that pumps the source gas and air from the chamber, an exhaust line between the vacuum pump and the chamber, and an analyzer connected to the exhaust line. The analyzer detects a derived molecule produced from the organic source and determines a replacement time of the evaporate.

Apparatus for and method of manufacturing semiconductor device

A photoelectric conversion device includes a substrate and a wiring layer disposed on the substrate. The wiring layer includes a wiring structure and a wiring insulating layer that surrounds the wiring structure. A reflective layer is disposed on the wiring layer. The reflective layer is electrically connected to the wiring structure. A semi-permeable metal layer is spaced apart from the reflective layer in a thickness direction of the substrate. The semi-permeable metal layer faces the reflective layer to form a microcavity between the reflective layer and the semi-permeable metal layer. A stacked structure is between the reflective layer and the semi-permeable metal layer in the thickness direction of the substrate. The stacked structure includes a photoelectric conversion layer, a transparent electrode layer, and an insulating optical spacer.

Photoelectric conversion devices

Disclosed are an apparatus for and a method of manufacturing a semiconductor device. The apparatus includes a chamber, an evaporator that evaporates an organic source to provide a source gas on a substrate in the chamber, a vacuum pump that pumps the source gas and air from the chamber, an exhaust line between the vacuum pump and the chamber, and an analyzer connected to the exhaust line. The analyzer detects a derived molecule produced from the organic source and determines a replacement time of the evaporator.

A method of measuring an image sensor is disclosed. The method includes connecting a measurement unit to an image sensor, producing an electric current, which sequentially flows through a second connection line, second lower electrodes, an upper electrode, first lower electrodes, and a first connection line of the image sensor, using the measurement unit, and measuring an alignment state of the lower electrodes, the photoelectric conversion layer, and the upper electrode.

Image sensor and methods of fabricating and measuring image sensor

A semiconductor memory device includes free magnetic pattern on a substrate, a reference magnetic pattern on the free magnetic pattern, the reference magnetic pattern including a first pinned pattern, a second pinned pattern, and an exchange coupling pattern between the first and second pinned patterns, a tunnel barrier pattern between the reference magnetic pattern and the free magnetic pattern, a polarization enhancement magnetic pattern between the tunnel barrier pattern and the first pinned pattern, and an intervening pattern between the polarization enhancement magnetic pattern and the first pinned pattern, wherein the first pinned pattern includes first ferromagnetic patterns and anti-ferromagnetic exchange coupling patterns which are alternately stacked.

Semiconductor memory device

A magnetic memory device may include a free magnetic pattern and a capping pattern on a surface of the free magnetic pattern. The capping pattern may include first and second metal elements. The capping pattern may include a first portion adjacent to an interface between the free magnetic pattern and the capping pattern, and a second portion spaced apart from the interface. The first metal element may have a concentration greater in the first portion than in the second portion. The first metal element may have an atomic weight smaller than that of the second metal element. The concentration of the first metal element along the thickness direction of the capping pattern may be proportional to a proximity to the interface.

Magnetic memory devices and methods for manufacturing the same

A memory device includes a magnetic tunnel junction comprising a first free layer, a pinned layer, and a tunnel barrier layer disposed between the first free layer and the pinned layer, wherein the first free layer comprises a first free magnetic pattern adjacent to the tunnel barrier layer, and a second free magnetic pattern spaced apart from the tunnel barrier layer with the first free magnetic pattern interposed therebetween, wherein the second free magnetic pattern contacts the first free magnetic pattern, wherein the first and second free magnetic patterns include boron (B), wherein a boron content of the first free magnetic pattern is higher than a boron content of the second free magnetic pattern, and wherein the boron content of the first free magnetic pattern is in a range of about 25 at % to about 50 at %.

Magnetic memory device and method for manufacturing the same

Example embodiments relate to magnetic memory devices and methods for manufacturing the same. The magnetic memory device includes a magnetic tunnel junction layer including a first magnetic layer, a second magnetic layer, and a first tunnel barrier layer between the first and second magnetic layers. The second magnetic layer is disposed on the first tunnel barrier layer and is in direct contact with the first tunnel barrier layer. The second magnetic layer includes cobalt-iron-beryllium (CoFeBe). A beryllium content of CoFeBe in the second magnetic layer ranges from about 2 at % to about 15 at %.

Magnetic memory device having cobalt-iron-beryllium magnetic layers

Example embodiments relate to a magnetic memory device that includes a magnetic tunnel junction layer including a first magnetic layer, a second magnetic layer, and a first tunnel barrier layer between the first and second magnetic layers. The second magnetic layer is disposed on the first tunnel barrier layer and is in direct contact with the first tunnel barrier layer. The second magnetic layer includes cobalt-iron-beryllium (CoFeBe). A beryllium content of CoFeBe in the second magnetic layer ranges from about 2 at % to about 10 at %.

The inventive concepts provide magnetic memory devices and methods forming the same. The method includes sequentially forming a first magnetic conductive layer and a capping layer on a substrate, patterning the capping layer and the first magnetic conductive layer to form a first magnetic conductive pattern and a capping pattern, forming an interlayer insulating layer exposing the capping pattern on the substrate, removing the capping pattern to expose the first magnetic conductive pattern, forming a tunnel barrier layer and a second magnetic conductive layer on the first magnetic conductive pattern and the interlayer insulating layer, and patterning the second magnetic conductive layer and the tunnel barrier layer to form a second magnetic conductive pattern and a tunnel barrier pattern.

Magnetic memory devices and methods of forming the same

Provided are a magnetic memory device and a method of forming the same. The magnetic memory device includes a pinned pattern including a coupling enhancement pattern, a polarization enhancement pattern, and a texture blocking pattern located between the coupling enhancement pattern and the polarization enhancement pattern, a free pattern located on the polarization enhancement pattern of the pinned pattern, and a tunnel barrier located between the pinned pattern and the free pattern. The coupling enhancement pattern includes a first enhancement magnetic pattern, a second enhancement magnetic pattern, and a first enhancement non-magnetic pattern located between the first enhancement magnetic pattern and the second enhancement magnetic pattern.

Growing community of inventors

Suwon-si, South Korea

Keewon Kim