Sk Keyfoundry Inc.

Keesik Ahn

Sungbum Park

Wan-Chul Kong

Weon-Hwa Jeong

Chulgeun Lim

Seongjun Park

Yonghwan Kim

Youngchul Seo

Soyeon Kim

Wanchul Kong

Hoon Jin

Woojin Han

Changbum Im

Ilwoo Lee

An eFuse one-time programmable (OTP) memory includes an eFuse intellectual property (IP) configured to perform one-time writing and multiple readings for a plurality of memory cells, and a serial interface (SI) logic configured to receive a clock signal and a trim signal from a master device, and perform data writing to, or reading from, the eFuse IP based on the clock signal and the trim signal. The trim signal includes a start signal, a mode signal configured for a write mode or a read mode, and control signals configured to read or write for each of a plurality of addresses corresponding to the plurality of memory cells.

eFuse OTP memory device including serial interface logic and operation method thereof

An embedded flash memory and an operation method thereof is provided. The embedded flash memory includes a memory cell array comprising a plurality of memory cells, an automatic verification controller comprising: a TRIM calibration configured to provide a write voltage, and a time controller configured to control a write time, and a high voltage generator configured to provide the write voltage to the memory cell array, an input buffer configured to store input data, a sense amplifier configured to generate read data from the memory cell array, and a data comparator configured to compare the read data with the input data.

Embedded flash memory and write operation method thereof

A low-power retention flip-flop is provided. The low-power retention flip-flop may include: a master latch configured to output an input signal based on first control signals; a slave latch configured to output the signal from the master latch based on second control signals; and a control logic configured to generate the first control signals based on a clock signal, and provide the generated first control signals to the master latch, and generate the second control signals based on the clock signal and a power down mode signal, and provide the generated second control signals to the slave latch.

Low-power retention flip-flop

A memory device includes an eFuse cell array in which unit cells of different types are alternately disposed, and each of the unit cells of different types includes a PN diode, a first NMOS transistor, and a fuse, wherein a first type unit cell and a second type unit cell are connected to each other through a common node, and the first type unit cell and the second type unit cell are disposed in a bilaterally symmetrical structure with respect to the common node.

Non-volatile memory device having a fuse type memory cell array

A semiconductor device includes a memory cell array including a plurality of memory cells, a bit line selection circuit, including a first main select transistor, and a plurality of first sub-select transistors connected in parallel with each other, and the plurality of first sub-select transistors configured to be the first memory cell through the first bit line to transfer the read current from the first bit line to the first memory cell; and a sense amplifier configured to compare a reference current having a predetermined current value with a memory current drawn by the first memory cell, and output an output signal based on an input voltage, the sense amplifier including an active load, connected to the first main select transistor, comprising a PMOS diode or a NMOS diode configured to lower the input voltage at a sense node.

Semiconductor device having a non-voltaile memory with high speed-read operation

An eFuse one-time programmable (OTP) memory is provided. The eFuse OTP memory supports inter integrated circuit (I2C) communication, and an operation method thereof. The eFuse OTP memory includes: an eFuse intellectual property (IP) which data writes once and data reads multiple times for a plurality of addresses; and an I2C slave which communicates with an I2C master based on a serial clock line and a serial data line, and performs the data write and the data read to and from the eFuse IP.

eFUSE one-time programmable memory with inter integrated circuit (I2C) communication and operation method thereof

A retention flip-flop includes a master latch outputting a first signal which is generated based on a signal inputted through an input terminal based on first control signals; a slave latch outputting a second signal generated based on the first signal based on the first control signals and second control signals; and a control logic that generates the first control signals based on a clock signal and provides the first control signals to the master latch and the slave latch, and generates the second control signals based on a power down signal and provides the second control signals to the slave latch. The slave latch comprises a retention latch which transmits the first signal to an output terminal as the second signal by operating as an open loop based on the second control signals or maintains the second signal by forming a closed loop based on the second control signals.

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Hwaseong-si, South Korea

Keesik Ahn