Hynix Semiconductor Inc.

Skhynix Inc.

Industry-University Cooperation Foundation Hanyang University

Hyundai Electronics Inc. Co., Ltd.

Kee Teok Park

Kang Seol Lee

Heat Bit Park

Jae Jin Lee

Sang Jin Byeon

Tae Jin Kang

Tae Sik Yun

Hyung Sik Won

Chang Sik Yoo

Chun Seok Jeong

Jang Woo Lee

Ji Eun Jang

Hyun Ju Ham

Khil Ohk Kang

Hong Jung Kim

A stacked memory device includes a plurality of lower word lines extending in a first direction, a bit line positioned over the plurality of the lower word lines and extending in a second direction intersecting with the first direction, and a plurality of upper word lines positioned over the bit line and extending in the first direction. The stacked memory device also includes a plurality of lower memory cells including a lower capacitor and a lower switching element between the lower word lines and the bit line. The stacked memory device further includes a plurality of upper memory cells including an upper capacitor and an upper switching element between the bit line and the upper word lines.

Semiconductor memory device including word line and bit line

Stacked DRAM memory device for improving integration density and reducing bit line capacitance

A semiconductor memory apparatus may be provided. The semiconductor memory apparatus may include a row decoder configured to generate one or more row decoding signals based on a plurality of row addresses. The semiconductor memory apparatus may include a column decoder configured to generate one or more column decoding signals based on a plurality of column addresses.

Semiconductor memory apparatus

A resistive memory apparatus may include a memory cell array and a selective write circuit. The memory cell array may include a plurality of resistive memory cells coupled between a plurality of word lines and a plurality of bit lines. The selective write circuit may determine whether or not to perform a pre-read/comparison operation for a memory cell on which a next write operation is scheduled to be performed, based on a logic level of input data provided for a write operation. The selective write circuit may control the write operation for the memory cell array according to a determination result of the pre-read/comparison operation.

Resistive memory apparatus, selective write circuit therefor, and operation method thereof

A voltage generation apparatus may include an external voltage sensing circuit configured to generate a first start signal and a second start signal by sensing the magnitude of a first external voltage and the magnitude of a second external voltage. The voltage generation apparatus may include an internal voltage sensing circuit configured to generate a voltage generation signal by comparing an internal voltage with a target voltage. The voltage generation apparatus may include a voltage pumping circuit configured to be activated in response to the first start signal, configured to perform a pumping operation based on the voltage generation signal, and configured to generate the internal voltage. The voltage generation apparatus may include a voltage regulating circuit configured to be activated in response to the first and second start signals, and configured to generate the internal voltage based on the voltage generation signal.

Voltage generation apparatus

The semiconductor apparatus includes a reference delay value check unit configured to receive a source signal and delay the source signal to generate a reference delay signal; a process delay value check unit configured to receive the source signal and delay the source signal to generate a process delay signal; and a signal generation unit configured to receive the reference delay signal and the process delay signal, receive an input signal, and variably delay the input signal based on the reference delay signal and the process delay signal to generate an output signal.

Semiconductor apparatus, method for delaying signal thereof, stacked semiconductor memory apparatus, and method for generating signal thereof

A semiconductor apparatus with an open bit line structure includes a memory bank including a plurality of memory cell blocks and dummy mats, in which a plurality of bit lines are formed, a bit line sense amplifier configured to be arranged between the plurality of memory cell blocks and the dummy mats, compare a voltage difference between a bit line and a complementary bit line, and amplify the difference, and a dummy word line driving unit configured to selectively activate a dummy word line of the dummy mat in response to a test mode.

Semiconductor apparatus with open bit line structure

A data alignment circuit of a semiconductor memory apparatus includes: a data strobe clock phase control block configured to control a phase of a data strobe clock signal in response to a strobe delay code and generate a delayed strobe clock signal; a plurality of data phase control blocks configured to control phases of input data in response to data delay codes and generate delayed data; a plurality of data alignment blocks configured to latch the delayed data in response to the delayed strobe clock signal and generate latched data and aligned data; and a delay code generation block configured to perform an operation of determining phases of the latched data and generate the strobe delay code and the data delay codes.

Data alignment circuit and method of semiconductor memory apparatus

A internal voltage generator in a semiconductor memory device has a first and second internal voltage generators. The first internal voltage generator outputs a first signal having a first voltage level to internal circuits of the memory device during an active mode of the memory device operation. The second internal voltage generator outputs a second signal having a second voltage level to the internal circuits of the memory device; however, the second signal is interrupted in absence of a predetermined level of a power control signal during the active mode of the memory device operation. The internal voltage control unit monitors the operational signals generated by the memory device and outputs the predetermined level of the power control signal during a plurality of active sections of the active mode of the memory device operation requiring power.

Memory device having internal voltage supply providing improved power efficiency during active mode of memory operation

A semiconductor memory device generates a control signal for regulating a potential of an internal power voltage when an extended mode register is set to adjust an operating speed and a tWR (time to write recovery) of a chip. The semiconductor memory device comprises an extended mode register setting unit and an internal power voltage generating unit. When an internal circuit enters into a specific mode for high-speed operation, the extended mode register setting unit outputs a plurality of internal power control signals to regulate a potential of an internal power voltage of the internal circuit. The internal power voltage generating unit generates an internal power voltage by regulating the potential of the internal power voltage in response to the plurality of internal power control signals.

Semiconductor memory device

Provided is concerned with a voltage regulation circuit and method of regulating the voltage, including a reference voltage generator for generating a reference voltage by dividing a core voltage of a semiconductor memory device, a controller for controlling the reference voltage generator to adjust the reference voltage without handling the core voltage in response to a test signal of a test mode, and a voltage generator for generating a bit-line precharging voltage and/or a cell plate voltage in accordance with the reference voltage.

Voltage regulating circuit and method of regulating voltage

A clock enable buffer for entry of a self-refresh mode. The clock enable buffer includes a current mirror load connected between a voltage source and first and second nodes, wherein the current mirror load has first and second transistors; a third transistor connected between the first node and a third node, wherein the third transistor is turned on according to a reference voltage; a fourth transistor connected between the second node and the third node, for controlling the current mirror load in response to a clock enable signal; a fifth transistor connected between the third node and a ground, wherein the fifth transistor is turned on according to a self-refresh signal; and a sixth transistor that is turned on according to an inverted self-refresh signal to make the potential of the first node a Low level.

Clock enable buffer for entry of self-refresh mode

The present invention discloses a circuit for detecting a negative word line voltage including a detecting unit for detecting a negative word line voltage in a detection node by using a plurality of loads coupled in series between a power supply terminal and a negative word line voltage terminal, a test signal generating unit for generating a plurality of test signals for detecting variations of the negative word line voltage, and a control unit driven according to the test signals, for controlling a potential of the detection node by adjusting a number of the loads of the detecting unit. The circuit for detecting the negative word line voltage can detect a wanted level of negative word line voltage by using the plurality of test signals without modifying the circuit, to reduce a development period of DRAM semiconductor products.

Circuit for detecting negative word line voltage

A semiconductor memory test device is capable of reducing the test time and increasing test reliability by applying an effective stress in a burn-in level or a wafer level. The semiconductor memory test device controls a sense amplifier using an additional sense amplifier driving signal when a 2rb pattern stress is applied. Therefore, the semiconductor memory test device applies a uniform stress by applying the constant supply voltage to a cell corresponding to the entire wordlines.

Growing community of inventors

Ichon-shi, South Korea

Kee Teok Park