Korea Institute of Energy Research

Kee-Shik Shin

Jae-ho Yun

Kyung-Hoon Yoon

Ara Cho

Jihye Gwak

Sejin Ahn

SeoungKyu Ahn

Sang-hyun Park

Young-joo Eo

Joo-hyung Park

Jun-sik Cho

Jin-Su Yoo

Ki-Bong Song

Se-jin Ahn

Seoung-Kyu Ahn

Jin-Hyeok Kim

Ji-Hye Gwak

Kyoo-Ho Kim

A method for manufacturing a CI(G)S-based thin film using a Cu&#x2014;Se two-component nanoparticle flux, and a CI(G)S-based thin film manufactured by the method are provided. The method for manufacturing the CI(G)S-based thin film, according to the present invention, comprises the steps of: manufacturing Cu&#x2014;Se two-component nanoparticles and In nanoparticles; manufacturing a slurry comprising the Cu&#x2014;Se two-component nanoparticles by mixing the Cu&#x2014;Se two-component nanoparticles, a solvent, and a binder, and manufacturing a slurry comprising the In nanoparticles by mixing the In nanoparticles, a solvent, and a binder; forming a thin film in which a plurality of layers are laminated by alternately coating the slurry comprising the Cu&#x2014;Se two-component nanoparticles and the slurry comprising the In nanoparticles on a substrate, regardless of order; and heat-processing the thin film which is formed.

Method for manufacturing CI(G)S-based thin film comprising Cu-Se thin film using Cu-Se two-component nanoparticle flux, and CI(G)S-based thin film manufactured by the method

A method of forming a nanometer-scale prominence and depression structure on a zinc oxide thin film in a wet-etching method, and the method includes the steps of: preparing a substrate; forming a nano structure having a height and a width of a nanometer range; forming the zinc oxide thin film on the substrate on which the nano structure is formed; and wet-etching the zinc oxide thin film, in which in the wet-etching step, zinc oxide having relatively low physical compactness is preferentially etched since the zinc oxide is positioned on the nano structure, and thus the prominence and depression structure is formed around the nano structure by the etching. The method is effective in that a thin film can be uniformly formed on the prominence and depression structure, and an electrolyte or an organic material may uniformly penetrate between the prominence and depression structure.

Method of forming zinc oxide prominence and depression structure and method of manufacturing solar cell using thereof

An apparatus and method for measurement of radiation intensity for testing reliability of a solar cell, and a method for testing the reliability of the solar cell. The apparatus includes a first solar cell receiving a predetermined intensity of radiation or more to generate electricity, a second solar cell receiving a predetermined intensity of radiation or more to generate electricity; a temperature sensor sensing a temperature of the second solar cell; a cooler cooling the first solar cell; and a controller measuring the intensity of radiation applied to the first solar cell, and controlling the cooler to prevent the temperature of the first solar cell from increasing above a predetermined temperature depending on the temperature of the second solar cell sensed by the temperature sensor.

Apparatus and method for measurement of radiation intensity for testing reliability of solar cell, and method for testing reliability of solar cell

A Cu&#x2014;In&#x2014;Zn&#x2014;Sn&#x2014;(Se,S)-based thin film for a solar cell and a preparation method thereof, and more particularly, to a Cu&#x2014;In&#x2014;Zn&#x2014;Sn&#x2014;(Se,S)-based thin film for a solar cell which can reduce an amount of In to be used and exhibit an excellent conversion efficiency and a preparation method thereof.

Cu&#x2014;In&#x2014;Zn&#x2014;Sn-(Se,S)-based thin film for solar cell and preparation method thereof

Disclosed are a high density CIS thin film and a method of manufacturing the same, which includes coating CIS nanopowders, CIGS nanopowders or CZTS nanopowders on a substrate by non-vacuum coating, followed by heat treatment with cavities between the nanopowders filled with filling elements such as copper, indium, gallium, zinc, tin, and the like. The high density CIS thin film is applied to a photo-absorption layer of a thin film solar cell, thereby providing a highly efficient thin film solar cell.

Method of manufacturing high density CIS thin film for solar cell and method of manufacturing thin film solar cell using the same

Growing community of inventors

Daejeon, South Korea

Kee-Shik Shin