Korea Institute of Energy Research

Kee Shik Shin

Ara Cho

Kyung Hoon Yoon

Jihye Gwak

Sejin Ahn

Jun Sik Cho

Joo Hyung Park

Jae Ho Yun

Young Joo Eo

SeoungKyu Ahn

Sang Hyun Park

Jin Su Yoo

Jin Su You

Jae-ho Yun

Kihwan Kim

Seoung Kyu Ahn

Se Jin Ahn

Ki Hwan Kim

Ki-Hwan Kim

Sung Woo Choi

Young-joo Eo

Joo-hyung Park

Jun-sik Cho

Jin-su Yoo

Jin-Su Yoo

Seoung-Kyu Ahn

Guk-Yeong Jeong

Hisun Park

Ji Hye Gwak

Disclosed is a crucible that exhibits stable evaporation efficiency and durability with respect to Al, is used in an evaporation source of an electron-beam evaporator, and includes a storage unit, which includes a wall and a bottom and in which a deposition material is placed, and a wetting prevention unit that includes another wall, which is taller than the wall of the storage unit, and another bottom, and is combined with an exterior of the storage unit. The wetting prevention unit is provided so that only the wall of the storage unit is wet with Al, and accordingly, the lifespan of the crucible is lengthened. Further, contact with the ceramic material in order to prevent wetting is minimized, thereby preventing a reduction in the physical properties of the thin film due to the impurities mixed with the deposited Al.

Crucible for electron-beam evaporator

The invention relates a thin-film solar cell. In the related art, a buffer layer, a transparent electrode, and a grid electrode are formed on a light absorption layer, but in the invention, the buffer layer and the transparent electrode are not formed on a light absorption layer, and the buffer layer, the transparent electrode, and the grid electrode are formed under a CIGS face such that solar light is directly input to the light absorption layer without obstacles, and the first electrode and the buffer layer are patterned in a saw-toothed structure to engage with each other to reduce a distance by which electrons or holes generated by absorbing light energy move to the electrode or the buffer layer.

Solar cell having rear buffer layer and method of manufacturing the same

A method for manufacturing a light absorption layer of a thin film solar cell in in a method for manufacturing a solar cell transparent electrode may be provided that includes: manufacturing a Ib group element-VIa group element binary system nano particle (s); manufacturing a binary system nano particle slurry of the Ib group element-VIa group element by adding a solvent, binder and a solution precursor including Va group element to the Ib group element-VIa group element binary system nano particle (s); distributing and mixing the binary system nano particle slurry of the Ib group element-VIa group element (s); coating the binary system nano particle slurry of the Ib group element-VIa group element on the rear electrode layer(s); and performing a heat treatment process on the coated nano particle slurry by supplying the VIa group element (s).

Method for manufacturing light absorption layer of thin film solar cell and thin film solar cell using the same

A method for manufacturing a CZTS based thin film having a dual band gap slope, comprising the steps of: forming a CuZnSnSthin film layer; forming a CuZnSn(S,Se)thin film layer; and forming a CuZnSnSthin film layer. A method for manufacturing a CZTS based solar cell having a dual band gap slope according to another aspect of the present invention comprises the steps of: forming a back contact; and forming a CZTS based thin film layer on the back contact by the method described above.

Method for manufacturing CZTS based thin film having dual band gap slope, method for manufacturing CZTS based solar cell having dual band gap slope and CZTS based solar cell thereof

Disclosed herein is a device for controlling a sample temperature during photoelectric measurement of the sample. The device for controlling a sample temperature during photoelectric measurement of the sample includes: a sample stage to which a measurement target sample is fixed; a cooling unit for cooling the sample by injecting air; and a temperature measuring unit having a thermometer that measures a temperature of the sample. The device has an effect of easily controlling the temperature of a measurement target sample by employing a direct control method for a sample temperature, in which air or cooled air is injected to the sample.

Device for controlling sample temperature during photoelectric measurement and solar cell measurement device using same

A method of fabricating an Ag&#x2014;(Cu&#x2014;)In&#x2014;Ga&#x2014;Se (A(C)IGS) based thin film using Se&#x2014;AgSe core-shell nanoparticles, an A(C)IGS based thin film fabricated by the method, and a tandem solar cell having the A(C)IGS thin film are disclosed. More particularly, a method of fabricating a densified Ag&#x2014;(Cu&#x2014;)In&#x2014;Ga&#x2014;Se (A(C)IGS) based thin film by non-vacuum coating a substrate with a slurry containing Se&#x2014;AgSe core-shell nanoparticles, an A(C)IGS based thin film fabricated by the method, and a tandem solar cell including the A(C)IGS based thin film are disclosed. According to the present invention, an A(C)IGS based thin film including Ag is manufactured by applying Se&#x2014;AgSe core-shell nanoparticles in a process of manufacturing a (C)IGS thin film, thereby providing an A(C)IGS based thin film having a wide band gap.

Method of fabricating A(C)IGS based thin film using Se-Ag2Se core-shell nanoparticles, A(C)IGS based thin film fabricated by the same, and tandem solar cells including the A(C)IGS based thin film

A method of fabricating a CIGS thin film for solar cells using a simplified co-vacuum evaporation process and a CIGS thin film fabricated by the method are disclosed. The method includes: (a) depositing Cu, Ga and Se on a substrate having a substrate temperature ranging from 500&#xb0; C. to 600&#xb0; C. through co-vacuum evaporation, (b) depositing Cu, Ga, Se and In through co-vacuum evaporation while maintaining the same substrate temperature as in step (a), and (c) depositing Ga and Se through co-vacuum evaporation, followed by depositing Se alone through vacuum evaporation while lowering the temperature of the substrate. The method can realize crystal growth and band-gap grading by Ga composition distribution while simplifying process steps and significantly reducing a film-deposition time, as compared with a conventional co-vacuum evaporation process, thereby providing improvement in process efficiency.

Method of fabricating copper indium gallium selenide (CIGS) thin film for solar cell using simplified co-vacuum evaporation and copper indium gallium selenide (CIGS) thin film for solar cell fabricated by the same

Disclosed is a method of forming a chalcopyrite light-absorbing layer for a solar cell, including: forming a thin film including a chalcopyrite compound precursor; and radiating light on the thin film, wherein the chalcopyrite compound precursor absorbs light energy and is thus crystallized. When forming the chalcopyrite light-absorbing layer, light, but not heat, is applied, thus preventing problems, including damage to a substrate due to heat and formation of MoSedue to heating of the Mo rear electrode. Furthermore, long-wavelength light, which deeply penetrates the thin film, is first radiated, and short-wavelength light, which shallowly penetrates the thin film, is subsequently radiated, thereby sequentially forming the chalcopyrite light-absorbing layer from the bottom of the thin film.

Method of forming chalcopyrite light-absorbing layer

Disclosed is an ultra-thin HIT solar cell, including: an n- or p-type crystalline silicon substrate; an amorphous silicon emitter layer having a doping type different from that of the silicon substrate; and an intrinsic amorphous silicon passivation layer formed between the crystalline silicon substrate and the amorphous silicon emitter layer, wherein the HIT solar cell further includes a transparent conductive oxide layer made of ZnO on an upper surface thereof, and the surface of the crystalline silicon substrate is not textured but only the surface of the transparent conductive oxide layer is textured, and thereby a very thin crystalline silicon substrate can be used, ultimately achieving an ultra-thin HIT solar cell having a very low total thickness while maintaining light trapping capacity.

Ultra thin hit solar cell and fabricating method of the same

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Daejeon, South Korea

Kee Shik Shin