Samsung Electro-mechanics Co., Ltd.

Kee Ju Um

In Hyuk Song

Dong Soo Seo

Kwang Soo Kim

Jae Hoon Park

Chang Su Jang

Jaehoon Park

Jin Su Kim

Bum Seok Suh

Young Hoon Kwak

Jong Man Kim

Min Gyu Park

Young Ki Lee

Dong Hwan Kim

Joon Seok Chae

Kyu Hwan Oh

Young Ho Sohn

Chang Seob Hong

Si Joong Yang

Hyo Jin Lee

Jun Ho Lee

Sun Woo Yun

In Wha Jeong

Suk Ho Lee

Jae Hyun Lim

Jin Suk Son

Sung Man Pang

Chang Jae Heo

Eun Jung Jo

Job Ha

Chang Soo Jang

Joon Hyung Cho

Jae Kyu Sung

Suk Ho Kee

There is provided a power semiconductor device including: a first semiconductor region of a first conductivity type; second semiconductor regions formed in the first semiconductor region and being of a second conductivity type; a well region formed above the second semiconductor regions and being of the second conductivity type; and a source region formed in the well region and being of the first conductivity type, wherein the second semiconductor regions include 1 to n layers formed from a lower portion of the device extending a in a direction of height of the device, and in the case that the widest width of the of the second semiconductor region of the nlayer is P, P&#x3c;P(n&#x2267;2).

Power semiconductor device and method of manufacturing the same

There is provided a power module package. The power module package includes: a base substrate provided with a pattern; a heat spreader formed by being stacked on an upper surface of the base substrate; and at least one first semiconductor device mounted on an upper surface of the heat spreader, wherein an outer circumferential surface of the heat spreader is provided with a coil.

Power module package including heat spreader and inductance coil

There is provided a power semiconductor device, including a first conductive type drift layer; a second conductive type body layer formed on the drift layer, a second conductive type collector layer formed below the drift layer; a first gate formed by penetrating through the body layer and a portion of the drift layer, a first conductive type emitter layer formed in the body layer and formed to be spaced apart from the first gate, a second gate covering upper portions of the body layer and the emitter layer and formed as a flat type gate on the first gate, and a segregation stop layer formed between contact surfaces of the first and second gates with the body layer, the emitter layer, and the drift layer.

Power semiconductor device and method of fabricating the same

There is provided an insulated gate bipolar transistor including: a first semiconductor area of a first conductivity type; a second semiconductor area of a second conductivity type formed on one surface of the first semiconductor area; third semiconductor areas of the first conductivity type continuously formed in a length direction on one surface of the second semiconductor area; a plurality of trenches formed between the third semiconductor areas, extending to an inside of the second semiconductor area, and being continuous in the length direction; a fourth semiconductor area of the second conductivity type formed on one surface of the third semiconductor areas, insulation layers formed inside the trenches; gate electrodes buried inside the insulation layers; and a barrier layer formed in at least one of locations corresponding to the third semiconductor areas inside the second semiconductor area.

Insulated gate bipolar transistor

There is provided a leadless package type power semiconductor module. According to an exemplary embodiment of the present disclosure, the leadless package type power semiconductor module includes: connection terminals of a surface mounting type (SMT) formed at edges at which respective sides of four surfaces meet each other; a first mounting area connected to the connection terminals through a bridge to be disposed at a central portion thereof and mounted with power devices or control ICs electrically connected to the power devices to control the power devices; and second mounting areas formed between the connection terminals and mounted with the power devices or the control ICs, wherein the first mounting area is disposed at a different height from the second mounting area through the bridge to generate a phase difference from the second mounting area. Therefore, it is possible to implement a high-integration, high-performance, and small power semiconductor module by applying a three-dimensional structure deviating from a one-dimensional flat structure.

Leadless package type power semiconductor module

A power semiconductor device may include: a first conductive type drift layer in which trench gates are formed; a second conductive type well region formed on the drift layer so as to contact the trench gate; a first conductive type source region formed on the well region so as to contact the trench gate; and a device protection region formed below a height of a lowermost portion of the source region in a height direction.

Power semiconductor device

A method of manufacturing a semiconductor device may include: preparing a substrate formed of SiC; depositing crystalline or amorphous silicon (Si) on one surface of the substrate to form a first semiconductor layer; and performing a heat treatment under a nitrogen atmosphere to form a second semiconductor layer formed of SiCN between the substrate and the first semiconductor layer.

Semiconductor device, method of manufacturing the same and power semiconductor device including the same

Disclosed herein is a semiconductor device including: a source electrode formed on one side of an N-type AlGaN layer; N-type and P-type AlGaN layers formed on the other side of the P-type AlGaN layer and formed in a direction perpendicular to the source electrode; a gate electrode formed on one side of the N-type and P-type AlGaN layers; and a drain electrode formed on the other side of the N-type and P-type AlGaN layers.

Semiconductor device

Disclosed herein is a power semiconductor device. The power semiconductor device includes a second conductive type first junction termination extension (JTE) layer that is formed so as to be in contact with one side of the second conductive type well layer, a second conductive type second JTE layer that is formed on the same line as the second conductive type first JTE layer, and is formed so as to be spaced apart from the second conductive type first JTE layer in a length direction of the substrate, and a poly silicon layer that is formed so as to be in contact with the second conductive type well layer and an upper portion of the second conductive type first JTE layer.

Power semiconductor device capable of maintaining a withstand voltage

There is provided a power semiconductor device including a contact formed in an active region, a trench gate extendedly formed from the first region into a first termination region and formed alternately with the contact, a first conductive well formed between the contact of the active region and the trench gate, a first conductive well extending portion formed in the first termination region and a part of a second termination region, and a first conductive field limiting ring formed in the second termination region and contacting the well extending portion.

There is provided a power semiconductor device, including: a first conductive type drift layer, a second conductive type termination layer formed on an upper portion of an edge of the drift layer, and a high concentration first conductive type channel stop layer formed on a side surface of the edge of the drift layer.

Power semiconductor device and method for manufacturing the same

A gate driver circuit applicable to an inductive load, an inverter module, and an inverter apparatus are provided. The gate driver circuit includes a high side driver having a first output side and a first control side and generating a high side gate signal; and a low side driver generating a low side gate signal, wherein the high side driver includes a first VS pad formed on the first output side; a first output pad formed on the first output side, a first VB pad formed on the first control side; and a second VB pad formed to be adjacent to the first VB pad on the first control side and electrically connected to the first VS pad; and a first circuit unit connected to the plurality of pads to provide the high side gate signal through the first output pad.

Gate driver circuit for inductive load, inverter module, and inverter apparatus having the same

A power factor correction circuit may include a boost converter circuit in which a plurality of boost circuits including a boost inductor, a rectifying diode, and a boost switch are connected with each other; and a snubber circuit including a snubber inductor and a snubber switch so as to snubber the boost converter circuit. The snubber inductor may be controlled so as to be turned on before the boost inductor is turned on to apply zero voltage to the boost inductor. It is possible to reduce switching loss occurring when the boost switch is turned on and increase efficiency of an AC-DC power supply apparatus.

Power factor correction circuit and method for controlling power factor correction

There is provided a power semiconductor device, including a plurality of trench gates formed to be spaced apart from each other by a predetermined distance, a current increasing part formed between the trench gates and including a first conductivity-type emitter layer and a gate oxide formed on a surface of the trench gate, and an immunity improving part formed between the trench gates and including a second conductivity-type body layer, a preventing film formed on the surface of the trench gate, and a gate oxide having a thickness less than that the gate oxide of the current increasing part.

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Suwon, South Korea

Kee Ju Um