Hynix Semiconductor Inc.

Kee Joon Oh

Geun Su Lee

Ki Soo Shin

Ji Yong Park

Hyo Seob Yoon

Ok Min Moon

Woo Jin Kim

Ji Hye Han

Jae Chang Chung

A method of removing an ion implanted photoresist comprises performing first cleaning a semiconductor substrate having the ion implanted photoresist using hot deionized water to which a megasonic process is applied, first rinsing the semiconductor substrate using cold deionized water, drying the semiconductor substrate, removing the ion implanted photoresist, and second cleaning the semiconductor wafer using an SPM solution.

Method of removing ion implanted photoresist

Cleaning solutions for removing photoresist resins remaining on the underlying layer patterns formed by photolithography process using the photoresist patterns as etching mask. The cleaning solution for removing photoresist comprises HO as solvent, amine compounds, hydrazine hydrate, transition metal-removing material and alkali metal-removing material. Photoresist coated on the top portion of underlying layers can be rapidly and effectively removed by the disclosed cleaning solution. In addition, the cleaning solution is environment-friendly because HO is used as the solvent, and has little effect on metal layers when underlying layers are formed of metals.

Solution composition for removing a remaining photoresist resin

Growing community of inventors

Gyeonggi-do, South Korea

Kee Joon Oh