Applied Materials, Inc.

Kedar Sapre

Nitin K Ingle

Jing Tang

Shankar Venkataraman

Paul Edward Gee

Sasha Joseph Kweskin

Ganesh Kumar Mohanur Raghunathan

Sumit Kumar Jha

Aditya Sista

Manuel Hernandez

Ubhay Kumar

Lei Luo

Abhijit Basu Mallick

Zheng Yuan

Zhong Qiang Hua

Linlin Wang

Ajay Bhatnagar

Methods, systems, and apparatus, including computer programs encoded on a computer storage medium, for training a machine learning model to segment magnified images of tissue samples. The method includes obtaining a magnified image of a tissue sample; processing an input comprising: the image, features derived from the image, or both, in accordance with current values of model parameters of a machine learning model to generate an automatic segmentation of the image into a plurality of tissue classes; providing, to a user through a user interface, an indication of: (i) the image, and (ii) the automatic segmentation of the image; determining an edited segmentation of the image, comprising applying modifications specified by the user to the automatic segmentation of the image; and determining updated values of the model parameters of the machine learning model based the edited segmentation of the image.

Interactive training of a machine learning model for tissue segmentation

A method of etching a recess in a semiconductor substrate is described. The method may include forming a dielectric liner layer in a trench of the substrate where the liner layer has a first density. The method may also include depositing a second dielectric layer at least partially in the trench on the liner layer. The second dielectric layer may initially be flowable following the deposition, and have a second density that is less than the first density of the liner. The method may further include exposing the substrate to a dry etchant, where the etchant removes a portion of the first liner layer and the second dielectric layer to form a recess, where the dry etchant includes a fluorine-containing compound and molecular hydrogen, and where the etch rate ratio for removing the first dielectric liner layer to removing the second dielectric layer is about 1:1.2 to about 1:1.

Intrench profile

A method of etching a substrate comprises forming on the substrate, a plurality of double patterning features composed of silicon oxide, silicon nitride, or silicon oxynitride. The substrate having the double patterning features is provided to a process zone. An etching gas comprising nitrogen tri-fluoride, ammonia and hydrogen is energized in a remote chamber. The energized etching gas is introduced into the process zone to etch the double patterning features to form a solid residue on the substrate. The solid residue is sublimated by heating the substrate to a temperature of at least about 100&#xb0; C.

Double patterning etching process

Methods of forming a dielectric liner layer on a semiconductor substrate are described. The method may include flowing a phosphorus-containing precursor with a silicon-containing precursor and an oxygen-containing precursor over the substrate to deposit a dielectric material. The dielectric material may be deposited along a field region and within at least one via on the substrate having a depth of at least 1 &#x3bc;m. The method may also include forming a liner layer within the via with the dielectric material. The liner may include a silicon oxide doped with phosphorus, and the thickness of the liner layer at an upper portion of the via sidewall may be less than about 5 times the thickness of the liner layer at a lower portion of the via sidewall.

Liner property improvement

A method for improving conformality of oxide layers along sidewalls of vias in semiconductor substrates includes forming a nitride layer over an upper surface of a semiconductor substrate and forming a via extending through the nitride layer and into the semiconductor substrate. The via may have a depth of at least about 50 &#x3bc;m from a top surface of the nitride layer and an opening of less than about 10 &#x3bc;m at the top surface of the nitride layer. The method also includes forming an oxide layer over the nitride layer and along sidewalls and bottom of the via. The oxide layer may be formed using a thermal chemical vapor deposition (CVD) process at a temperature of less than about 450&#xb0; C., where a thickness of the oxide layer at the bottom of the via is at least about 50% of a thickness of the oxide layer at the top surface of the nitride layer.

Conformality of oxide layers along sidewalls of deep vias

Aspects of the disclosure pertain to methods of depositing dielectric layers on patterned substrates. In embodiments, dielectric layers are deposited by flowing BIS(DIETHYLAMINO)SILANE (BDEAS), ozone and molecular oxygen into a processing chamber such that a relatively uniform dielectric growth rate is achieved across the patterned substrate surface. The deposition of dielectric layers grown according to embodiments may have a reduced dependence on pattern density while still being suitable for non-sacrificial applications.

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A method of etching silicon-and-carbon-containing material is described and includes a SiConi&#x2122; etch in combination with a flow of reactive oxygen. The reactive oxygen may be introduced before the SiConi&#x2122; etch reducing the carbon content in the near surface region and allowing the SiConi&#x2122; etch to proceed more rapidly. Alternatively, reactive oxygen may be introduced during the SiConi&#x2122; etch further improving the effective etch rate.

Silicon-selective dry etch for carbon-containing films

Aspects of the disclosure pertain to methods of depositing conformal silicon oxide layers on patterned substrates. In embodiments, dielectric layers are deposited by flowing a silicon-containing precursor and ozone into a processing chamber such that a relatively uniform dielectric growth rate is achieved across the patterned substrate surface having heterogeneous materials and/or a heterogeneous pattern density distribution. The deposition of dielectric layers grown according to embodiments may have a reduced dependence on underlying material and pattern density while still being suitable for non-sacrificial applications. Reduction in dependence on pattern density is achieved by terminating deposition near the end of an incubation period. Multiple deposition cycles may be conducted in series since the beneficial nature of the incubation period may repeat after a pause in deposition.

Silicon-ozone CVD with reduced pattern loading using incubation period deposition

Methods of depositing a silicon oxide layer on a substrate are described. The methods may include the steps of providing a substrate to a deposition chamber, generating an atomic oxygen precursor outside the deposition chamber, and introducing the atomic oxygen precursor into the chamber. The methods may also include introducing a silicon precursor to the deposition chamber, where the silicon precursor and the atomic oxygen precursor are first mixed in the chamber. The silicon precursor and the atomic oxygen precursor react to form the silicon oxide layer on the substrate, and the deposited silicon oxide layer may be annealed. Systems to deposit a silicon oxide layer on a substrate are also described.

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San Jose, CA, United States of America

Kedar Sapre