G.t. Equipment Technologies, Inc.

Gt Solar Incorporated

Dpa Ventures, Inc.

Ferrofluidics Corporation

G.t. Equuipment Technologies Inc.

Kedar Prasad Gupta

Mohan Chandra

Jonathan A Talbott

Ijaz H Jafri

Vishwanath Prasad

Partha S Dutta

Saurabh Ullal

Robert B Farmer

Mark Pettus

Bernard D Jones

Pooja Devendran

Anand Devendran

David F Bliss

Alleppey V Hariharan

Carl Chartier

Yuepeng Wan

Michael A Costantini

Santhana Raghavan Parthasarathy

Jurek K Koziol

Rick C White

Philippe Leyvraz

Allison Caster

Derek M Dispensa

George F Lewis

In general, the present disclosure is directed to an artificial window system that can simulate the user experience of a traditional window in environments where exterior walls are unavailable or other constraints make traditional windows impractical. In an embodiment, an artificial window consistent with the present disclosure includes a window panel, a panel driver, and a camera device. The camera device captures a plurality of image frames representative of an outdoor environment and provides the same to the panel driver. A controller of the panel driver sends the image frames as a video signal to cause the window panel to visually output the same. The window panel may further include light panels, and the controller may extract light characteristics from the captured plurality of image frames to send signals to the light panels to cause the light panels to mimic outdoor lighting conditions.

Artificial window system

Power management in an artificial window system

A process for making silicon ingots using a multi-part, reusable, graphite crucible of at least two mold pieces configured for assembly into an open top mold having an interior surface functional as a mold cavity for receiving molten silicon; removing or reducing a prior applied release coating from the interior surface until a uniformly smooth finish is achieved; coating the interior surface with a first layer of release coating comprising silicon nitride; coating the interior surface with a second layer of release coat comprising silica suspended in water; coating the interior surface with a third layer of release coat comprising silicon nitride; curing the release coat on said crucible; casting a silicon ingot in the crucible; and then repeating the prior steps multiple times.

Solidification of crystalline silicon from reusable crucible molds

A bulk silicon material for making silicon ingots, consisting of silicon pellets, and a method for making the pellets from an agglomerate-free source of high purity silicon powder by feeding a controlled amount of silicon powder that is free of intentional additives and binders into a pellet die, and dry compacting the powder at ambient temperature with pressure to produce a pellet that has a density of about 50&#x2013;75% of the theoretical density of elemental silicon, a weight within a range of about 1.0 gram to about 3.0 grams and preferably of about 2.3 grams, a diameter in the range of 10 mm to 20 mm and preferably of about 14 mm, and a height in the range of 5 mm to 15 mm and preferably of about 10 mm.

Dry conversion of high purity ultrafine silicon powder to densified pellet form for silicon melting applications

A method and apparatus, and product by process, for the production of bulk polysilicon by a chemical vapor deposition process on a removable tube section. A quartz envelope and base plate form a CVD reactor enclosure, with external radiant heaters providing process heat through the wall of the reactor, and with process gas inlet and outlet ports located in the base plate. A tube section, preferably an EFG silicon tube-section, vertically emplaced on the base plate and capped to close the top is used as the reaction chamber. During the CVD process, deposition occurs on the inside surface of the chamber tube, the inner diameter of the deposit layer becoming increasingly smaller as the yield accumulates. In a two tube reactor, a smaller diameter, vertical middle tube is uniformly spaced and supported inside the chamber tube for fall flow of process gas over and under the middle tube so that deposition occurs on the three exposed tube surfaces. A co-axial core tube and heater mounted on the base plate provides yet more deposition surface area, improved thermal gradient in the reaction chamber, and greater thermal efficiency to the process. The full, double sided deposit on the middle tube and exterior deposit on the core tube are unique products of the process.

Cold wall reactor and method for chemical vapor deposition of bulk polysilicon

A method and apparatus, and product by process, for the production of bulk polysilicon by broad area chemical vapor deposition, consisting of a quartz envelope and base plate forming a reactor enclosure, with external radiant heaters providing the heat source. A thin wall, edge-defined film fed growth (EFG) silicon tube section is used as the deposition casing and reaction chamber wall. The tube is capped at the top and sealed to the base plate to form the reaction chamber. External heaters radiate heat through the quartz enclosure to heat the tube wall to deposition temperature. A through flow of process gas is introduced to initiate the deposition. A uniform wide surface area deposit occurs on the inside surface of the tube, causing the diameter to become increasingly smaller as the yield accumulates. In a two tube reactor, a smaller core tube is uniformly spaced and supported inside the outer tube for full flow of process gas around the core tube so that deposition occurs on both the outside and inside surface of the core tube. The outer tube may be configured for preheating by a flow of electrical current from the base plate to the cover plate.

Method and apparatus for chemical vapor deposition of polysilicon

A slurry recycle process for use in free-abrasive machining operations such as for wire saws used in wafer slicing of ingots, where the used slurry is separated into kerf-rich and abrasive-rich components, and the abrasive-rich component is reconstituted into a makeup slurry. During the process, the average particle size of the makeup slurry is controlled by monitoring the condition of the kerf and abrasive components and making necessary adjustments to the separating force and dwell time of the separator apparatus. Related pre-separator and post separator treatments, and feedback of one or the other separator slurry output components for mixing with incoming used slurry and recirculation through the separator, provide further effectiveness and additional control points in the process. The kerf-rich component is eventually or continually removed; the abrasive-rich component is reconstituted into a makeup slurry with a controlled, average particle size such that the products of the free-abrasive machining method using the recycled slurry process of the invention are of consistent high quality with less TTV deviation from cycle to cycle for a prolonged period or series of machining operations.

Method and apparatus for improved wire saw slurry

An apparatus and method for drying a microelectronic structure on wafer substrate using supercritical phase gas techniques and a unique pressure vessel locking mechanism. There is lid and a base with an open cavity to contain at least one microelectronic structure on wafer substrate. Clamping the lid to the base uses locking clamp rings with open jaws large to partially enclose the edge of the vessel. The clamp rings are supported symmetrically about the sides of the vessel. The rings are adjusted between an open position where the rings are clear of the vessel and a locking position where the jaws partially enclose the vessel. The jaws and the vessel share a tapered cam plate and roller system configured to bring the rings into vertically compressive locking engagement on the pressure vessel when the rings are moved into locking position. Mechanical interlocks provide security against back pressure opening the rings. The invention includes the necessary mechanisms and systems for manual or automatic closing and clamping the vessel, controlling pressure in the cavity, controlling temperature in the cavity, flowing process fluid through the cavity, venting the cavity, unclamping the pressure vessel, and removing the lid.

Supercritical phase wafer drying/cleaning system

The invention is an improved method and apparatus for growing crystals that incorporates an isolation valve between the growth and injection chambers to allow the growth chamber to be maintained at operating temperature and pressure while decoupling the injector chamber in order to make changes necessary to restart or advance the process. Separate heating elements in the injector assembly or chamber provide related heating control. Upper and lower load cells and programmable signal amplifiers are configured to weigh and output the dynamic weight range of the loss or gain of process materials of the growth chamber crucible and the injector assembly, and are connected by electrical slip rings or wireless means to a computer control system.

Method and apparatus for synthesis and growth of semiconductor crystals

The present invention is directed toward a feeder system for replenishing the melt in a crystal growing system that utilizes a heated crucible containing a pool of melted charge material from which a seen is withdrawn to grow the crystal. The feed system utilizes a storage hopper for storing solid pellets of the charge material. The storage hopper is provided with an opening at the bottom thereof which allows pellets to flow out of the hopper. A rotating plate is provided below the opening for collecting pellets that flow from the opening and enables piles of pellets to be formed thereon. A wiper is provided that extends across a portion of the plate and, as the plate is rotated, contacts the pellet piles to wipe pellets off of the plate. Thereafter, the pellets are collected and sourced to the melt to accomplish replenishment thereof.

Solid pellet feeder for controlled melt replenishment in continuous

Growing community of inventors

Hollis, NH, United States of America

Kedar Prasad Gupta