Zymergen Inc.

Cypress Semiconductor Corporation

Matrix Semiconductor, Inc.

Dna2.0, Inc.

Kedar Patel

Aaron Miller

Shawn Szyjka

Philip Weyman

Sara Da Luz Areosa Cleto

Stephen Blaskowski

Solomon Henry Stonebloom

Colin Scott Maxwell

Sharon Nademanee

Elizabeth Lauren Meier

Cameron Coates

Melissa Netwal

Roy E Scheuerlein

Jeffrey T Watt

Andrew J Walker

Alper Ilkbahar

Krishnaswamy Ramkumar

Jeremy S Minshull

Shan Sun

Erik Jedediah Dean

Thomas Davenport

Sridhar Govindrajan

Brian Chaikind

Hendrik M Van Rossum

Paul Perkovich

Kunal Mehta

The present invention relates to methods for editing the genome of a microbial host cell in successive rounds of transformation. The method allows the introduction of genetic edits into the genome of a microbial host cell in an iterative fashion that does not require the use of functional counterselection following at least one round of transformation. It can be used to rapidly stack genetic edits in the genome of a microbial host cell. Kits for performing the methods are also disclosed.

Iterative genome editing in microbes

Methods, compositions, and kits for high throughput DNA assembly reactions in vitro. Modular CRISPR DNA constructs comprising modular insert DNA parts flanked by cloning tag segments comprising pre-validated CRISPR protospacer/protospacer adjacent motif sequence combinations. High throughput methods of CRISPRi and CRISPRa.

Applications of CRISPRi in high throughput metabolic engineering

The present disclosure relates to methods of joining three or more double-stranded (ds) or single-stranded (ss) DNA molecules of interest in vitro or in vivo. The method allows the joining of a large number of DNA fragments, in a deterministic fashion. It can be used to rapidly generate nucleic acid libraries that can be subsequently used in a variety of applications that include, for example, genome editing and pathway assembly. Kits for performing the method are also disclosed.

Multiplexed deterministic assembly of DNA libraries

The present invention relates to methods for editing the genome of a microbial host cell in one or more rounds of transformation. The method allows the introduction of genetic edits into the genome of a microbial host cell in a pooled and/or iterative fashion that does not require the use of functional counterselection following at least one round of transformation. It can be used to rapidly stack genetic edits in the genome of a microbial host cell. Compositions and kits for performing the methods are also disclosed.

Pooled genome editing in microbes

The invention provides methods for introducing co-varying paired nucleic acids into a vector such under separate transcriptional control. An oligonucleotide is synthesized including the paired nucleic acids. The oligonucleotide is then assembled with a spacer nucleic acid encoding a promoter. After assembly the spacer nucleic acid is to one side of the oligonucleotide encoding the paired segments. However, on circularization of the assembled nucleic acid and cleavage between the DNA segments the spacer oligonucleotide and its components now occur between the paired segments. The resulting nucleic acid can now be cloned into a vector with a single step, such that each of the paired nucleic acid segments is linked to its own promoter. The present method can readily be extended to library screening without proportionately increasing the effort.

Methods for generating libraries with co-varying regions of polynuleotides for genome modification

Non-volatile memory cells including complimentary metal-oxide-semiconductor transistors and embedded ferroelectric capacitor and methods of forming the same are described. In one embodiment, the method includes forming on a surface of a substrate a gate level including a gate stack of a MOS transistor, a first dielectric layer overlying the MOS transistor and a first contact extending through the first dielectric layer from a top surface thereof to a diffusion region of the MOS transistor. A local interconnect (LI) layer is deposited over the top surface of the first dielectric layer and the first contact, a ferro stack including a bottom electrode, a top electrode and ferroelectric layer there between deposited over the LI layer, and the ferro stack and the LI layer patterned to form a ferroelectric capacitor and a LI through which the bottom electrode is electrically coupled to the diffusion region of the MOS transistor.

Methods of fabricating an F-RAM

A semiconductor device comprises two transistors where a gate electrode of one transistor and source or drain of another transistor are located in the same rail. A monolithic three dimensional array contains a plurality of such devices. The transistors in different levels of the array preferably have a different orientation.

High density 3d rail stack arrays and method of making

A method of making a semiconductor structure includes sealing a gate layer by wet oxidation. The gate layer is on a substrate containing isolation regions. Semiconductor devices prepared from the semiconductor structure exhibits reduced inverse narrow width effects.

Method to eliminate inverse narrow width effect in small geometry MOS transistors

High density 3D rail stack arrays

Growing community of inventors

Fremont, CA, United States of America

Kedar Patel