Xiamen Sanan Optoelectronics Technology Co., Ltd.

Other

Xiamen San'an Optoelectronics Co., Ltd

Xiamen Sanan Integrated Circuit Co., Ltd.

Kechuang Lin

Chen-Ke Hsu

Jiansen Zheng

Qunfeng Pan

Xiaojuan Shao

Yi-Jui Huang

Junpeng Shi

Shaohua Huang

Suhui Lin

Jyh-Chiarng Wu

Meng-Hsin Yeh

Wen-Yu Lin

Jiali Zhuo

Lingfeng Yin

Shao-hua Huang

Houng-Chi Wei

Jyh Chiarng Wu

Tsung-Te Chiu

Chi-Lun Chou

Bing-Han Chuang

JyhChiarng Wu

Jyh-Chiamg Wu

Hsing-wei Lu

Chiahao Tsai

Chia-Chu Kuo

A backside metallized compound semiconductor device includes a compound semiconductor wafer and a metal layered structure. The compound semiconductor wafer includes a substrate having opposite front and back surfaces, and a ground pad structure formed on the front surface. The substrate is formed with a via extending from the back surface to the front surface to expose a side wall of the substrate and a portion of the ground pad structure. The metal layered structure is disposed on the back surface, and covers the side wall and the portion of the ground pad structure. The metal layered structure includes an adhesion layer, a seed layer, a gold layer, and an electroplated copper layer that are formed on the back surface in such order. The method for manufacturing the backside metallized compound semiconductor device is also disclosed.

Backside metallized compound semiconductor device and method for manufacturing the same

A method of making a transfer head for transferring micro elements, wherein the transfer head includes a cavity with a plurality of vacuum paths and a suite having arrayed suction nozzles and vacuum paths. The suction nozzles are connected to the vacuum path components respectively, and the vacuum path components are formed to connect to vacuum paths in the cavity respectively. The suction nozzles attract or release the micro element through vacuum pressure transmitted by vacuum. When the suite is mounted in the cavity, the upper surface of the suite is arranged with optical switching components for controlling the switch of the vacuum path components and vacuum paths of each path so that the suction nozzles can attract or release required micro element through vacuum pressure; and fabricating a suite with an array micro-hole structure, wherein the array micro-hole structure serves as the vacuum path components and the suction nozzles.

Transfer head for transferring micro element and transferring method of micro element

A transfer head for transferring micro elements includes a cavity with a plurality of vacuum paths; a suite having a plurality of suction nozzles and vacuum path components. The suction nozzles are connected to the vacuum path components respectively, and the vacuum path components are formed to connect to vacuum paths in the cavity respectively. The suction nozzles absorb or release the micro elements through vacuum pressure, which is transmitted by vacuum path components and vacuum paths of each path. When the suite is mounted in the cavity, the upper surface of the suite is arranged with optical switching components for controlling the switch of the vacuum path components and vacuum paths of each path so that the suction nozzles can absorb or release required micro element through vacuum pressure.

A fabrication method for a light emitting diode (LED), including: 1) mounting a LED chip on a substrate; 2) mounting a screen printing template on the LED chip; 3) coating a silicone gel layer over the surface of the screen printing template; 4) printing the phosphor: printing the phosphor over the chip surface via silk screen printing process and recycling the excess phosphor; and 5) removing the screen printing template and baking the phosphor for curing, and coating the cured phosphor over the chip surface. In the packaging method of the present disclosure, the unused phosphor can be recycled because it is not polluted by the screen printing template material.

Light emitting diode fabrication method

An electrode material includes a fine-array porous material. The fine-array porous material includes a plurality of pores having a substantially uniform size of &#x3c;1000 &#x3bc;m, with a variation of &#x3c;20%, and comprises a metal such as Ni, Al, Ti, Sn and Mn. The metal fine-array porous electrode material can be surface-treated to form a metal oxide on the surface of the porous electrode material, or be coated with a metal oxide including RuO, TaO. An electrical energy storage apparatus, such as a supercapacitor or a lithium battery, containing the fine-array porous electrode material can have significantly improved performances as compared with conventional materials.

Electrode material and energy storage apparatus

A transfer head for transferring micro element includes a cavity; a plurality of vacuum paths connected with the cavity respectively with valves configured at the connection between the cavity and the vacuum paths and used for opening/closing; a plurality of suction nozzles connected with the vacuum paths, wherein the suction nozzles hold or release the micro element via vacuum pressure; vacuum pressure is transmitted by each vacuum path; a switching component for controlling valve to open/close each vacuum path, so as to control the suction nozzles to hold or release required micro element via vacuum pressure. Further, the switching component includes a CMOS memory circuit and an address electrode array connected to the CMOS memory circuit to realize micro-switch array. The transfer head can selectively transfer a plurality of micro elements at one time.

A super-fine bubble generation apparatus includes a fine-array porous membrane and a device for generating substantially uniform, super-fine gas bubbles in a liquid. The fine-array porous membrane includes a plurality of pores having a substantially uniform size of &#x3c;100 &#x3bc;m, with a variation of &#x3c;20%. The super-fine gas bubbles generated by this apparatus can have a size of 50 nm-50000 nm, with a substantially uniform distribution with variations &#x3c;20%. Applications of such super-fine bubble generation apparatus can include a skin cleansing device, or a teeth-cleaning device.

Bubble-generation apparatus and system

An apparatus including a fine-array porous material with a specific surface area higher than 10/mm, the specific surface area depending on different pore sizes, wherein the porous material comprises a plurality of pores having a substantially uniform size with a variation of less than about 20%, wherein the size is larger than about 100 nm and smaller than about 10 cm. The high-buoyancy apparatus can be part of a water vehicle such as a boat or a submarine, and the fine-array porous material is configured to reduce friction and/or control buoyancy. A conduit is also provided employing a fine-array porous material to reduce friction and/or control buoyancy. A garment is provided taking advantage of water repellant and/or UV/IR reflection properties of the fine-array porous material.

High-buoyancy material and system

A film for semiconductor device includes a base material and an adhesive layer formed over the base material. The film is divided into an adhesive area and an expansion area. The elasticity modulus of the expansion area is less than that of the adhesive area. When tensile strength is applied on the film, the expansion area is more prone to tensile deformation than the adhesive area. When this film is used for film expansion of semiconductor devices, the devices can be evenly and orderly arranged on the film.

Film for semiconductor device and fabrication method thereof

An epitaxial structure of light emitting diode with a current modulation layer, and more specifically, a high-resistivity material is injected to change the current conduction path, and implementation of the main structure is to grow a high-resistivity material (e.g., InAlGaN) over the N-type conductive layer or the P-type conductive layer till part of current conduction path is exposed through high-temperature Hin-situ etching in the reacting furnace and to grow the N-type or the P-type conductive layer for coverage. This design for forming a current modulation layer without second epitaxial growth provides the injected current with a better spreading path in the N-type conductive layer and the P-type conductive layer, which more effectively and uniformly injects the current to the active layer and improves luminous efficiency.

Nitride light emitting diode and fabrication method thereof

An n-type layer, an active layer, and a p-type layer are grown on a growth substrate. Portions of the p-type layer and active layer are etched away to expose the n-type layer, and an n-electrode is formed over the exposed portions of the n-type layer. A first dielectric layer is formed over the n-electrodes. A transparent conductor layer is formed over the p-type layer and the first dielectric layer. A p-electrode is formed over the transparent conductor layer. A transparent bonding layer is deposited over the transparent conductor layer and the p-electrode. A transparent support substrate is bonded to the p-type layer via the bonding layer. The growth substrate is then removed to expose the n-type layer, and the layers are etched to expose the n and p electrodes for connection to a power source. A reflector layer is formed on the bottom surface of the substrate.

Light emitting diode having increased light extraction

A nitride light-emitting diode is provided including a current spreading layer. The current spreading layer includes a first layer having a plurality of distributed insulating portions configured to have electrical current flow therebetween; and a second layer including interlaced at least one substantially undoped nitride semiconductor layer and at least one n-type nitride semiconductor layer configured to spread laterally the electrical current from the first layer.

Nitride light-emitting diode with a current spreading layer

A light emitting diode (LED) includes a transparent insulating layer; and at least one transparent conductive oxide layer substantially enclosing the transparent insulating layer, wherein the transparent insulating layer and the at least one transparent conductive oxide layer are configured to distribute a current through the LED more concentrated toward a peripheral region of the LED.

Light emitting diode with a current concentrating structure

A light emitting diode (LED) includes a transparent insulating layer; and at least one transparent conductive oxide layer substantially enclosing the transparent insulating layer, wherein the transparent insulating layer and the at least one transparent conductive oxide layer are configured to distribute a current through the LED toward a peripheral region of the LED.

A reflector for a GaN-based light-emitting device, method for manufacturing the reflector and GaN-based light-emitting device including the reflector are provided. The reflector is formed on a p-type GaN-based epitaxial layer and includes: a whisker crystal of un-doped GaN, formed on a surface of the p-type GaN-based epitaxial layer with a predefined density distribution and at a position that corresponds to a dislocation defect of an epitaxial layer; and a metal reflective layer, formed on both the p-type GaN-based epitaxial layer and the whisker crystal. The whisker of un-doped GaN is positioned on the dislocation defect of the p-type GaN-based epitaxial layer, so that the Ag reflective layer can be separated from the dislocation defect of the p-type GaN-based epitaxial layer, thereby effectively preventing Ag from moving inside the dislocation defect via electromigration, and largely decreasing the possibility of current leakage of the light-emitting device including the Ag reflector.

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Xiamen, China

Kechuang Lin