Cabot Microelectronics Corporation

3m Innovative Properties Company

Ke Zhang

Selvaraj Palanisamy Chinnathambi

Michael L White

John B Scheibner

Hon Wu Lau

Chee Tat Ee

Juang Meng Mok

Yong Peng Lee

Steven Grumbine

Andrew G Haerle

Robert S Dodsworth

Tong Li

Hon-Wu Lau

Lu Tian

Tsung-Ho Lee

Described are slurry compositions useful in chemical-mechanical processing of a nickel layer of a substrate, wherein the slurry compositions contain abrasive particles that include silica particles that are cationically charged at a low pH.

Chemical-mechanical processing slurry and methods for processing a nickel substrate surface

Described are chemical mechanical processing (CMP) compositions and related methods, including compositions and methods for polishing nickel-containing substrate surfaces such as nickel phosphorus (NiP) surfaces for hard disk applications, wherein the compositions contain highly irregular-shaped fused silica abrasive particles.

Chemical-mechanical processing slurry and methods

Chemical mechanical polishing (CMP) compositions and methods for planarizing a nickel phosphorus (NiP) substrate are described. A NiP CMP method comprises abrading a surface of the substrate with a CMP composition. The CMP composition comprises a colloidal silica abrasive suspended in an aqueous carrier having a pH of less than 2, and containing a primary oxidizing agent comprising hydrogen peroxide, a secondary oxidizing agent comprising a metal ion capable of reversible oxidation and reduction in the presence of NiP and hydrogen peroxide, a chelating agent, and glycine. The chelating agent comprises two or three carboxylic acid substituents capable of chelating to the metal ion of the secondary oxidizing agent.

CMP compositions and methods for polishing nickel phosphorous surfaces

The invention provides a chemical-mechanical polishing composition and a method of chemically-mechanically polishing a substrate, such as a nickel-phosphorous substrate. The composition contains water, silica particles, a first alcohol comprising one or more of monohydric alcohol, polyhydric alcohol, and diglycol, a second alcohol in the form of polyvinyl alcohol, a nickel complexing agent, and optionally hydrogen peroxide, pH adjuster, and/or biocide. The method involves contacting the substrate with a polishing pad and the chemical-mechanical polishing composition, moving the polishing pad and the polishing composition relative to the substrate, and abrading at least a portion of the substrate to polish the substrate.

CMP composition and method for polishing rigid disks

The invention provides a polishing composition that contains (a) &#x3b1;-alumina particles that have an average particle size of about 250 nm to about 300 nm, (b) a per-type oxidizing agent, (c) a complexing agent, wherein the complexing agent is an amino acid or an organic acid, and (d) water. The invention also provides a method of polishing a substrate, especially a nickel-phosphorous substrate, with the polishing composition.

Polishing composition and method for nickel-phosphorous coated memory disks

A chemical mechanical polishing (CMP) composition for planarizing a nickel phosphorus (NiP) substrate comprises a suspension of colloidal silica particles and fused silica particles in an acidic aqueous carrier containing hydrogen peroxide, in which the concentration of the fused silica particles is less than or equal to the concentration of the colloidal silica particles. In some embodiments, the CMP composition includes a primary complexing agent, a secondary complexing agent, and a metal ion such as ferric ion, which is capable of reversible oxidation and reduction in the presence of hydrogen peroxide and NiP.

Nickel phosphorous CMP compositions and methods

A flexible circuit incorporating an electrostatic discharge limiting feature, comprising a dielectric substrate selected from polyimide or liquid crystal polymer film having at least one conductive trace coated on at least one surface of the substrate wherein the discharge limiting feature includes a thin conductive polymer coating selectively applied over a at least a portion of the non-critical region of the circuit, said feature reducing the surface resistivity of the circuit to about 10ohms to about 10ohms and having tribocharging of less than about 50 V.

Flexible circuit with electrostatic damage limiting feature

A flexible circuit incorporating an electrostatic discharge limiting feature, comprising a dielectric substrate selected from polyimide or liquid crystal polymer film having at least one conductive trace coated on at least one surface of the substrate wherein the discharge limiting feature includes a thin conductive polymer coating selectively applied over a at least a portion of the non-critical region of the circuit, said feature reducing the surface resistivity of the circuit to about 10 ohms to about 10 ohms and having tribocharging of less than about 50 V.

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Singapore, Singapore

Ke Zhang