Anhui University

Ke Xu

Zhixiang Huang

Ming Fang

Jian Feng

Wei Yang

Chenran Liu

Xingchen Liu

Zhicheng Xiao

Zhenshan Guan

Xuesong Deng

Yang Shi

Meijun Kang

Yihao Li

Rongsheng Cheng

Donghua Zhou

Described is a broadband near infrared absorber, including a wide-type cross-shaped gold layer, an indium tin oxide (ITO) thin film, a silicon dioxide (SiO) layer and a hollowed-out cross-shaped gold layer arranged from top to bottom. A length of the cross-shaped gold layer is the same as a length of the hollowed-out cross-shaped gold layer. A width of the cross-shaped gold layer is the same as a width of the hollowed-out cross-shaped gold layer. A thickness of the cross-shaped gold layer is different from a thickness of the hollowed-out cross-shaped gold layer.

Broadband infrared absorber based on epsilon-near-zero material

Provided is an electromagnetic field simulation method based on a face-centered cubic and a subgrid, including setting periodic boundary conditions and a metal plate to construct an electromagnetic field simulation model based on the face-centered cubic, FDTD and the subgrid; through the electromagnetic field simulation model, setting the source point in the subgrid region, selecting the detecting point, simulating the electromagnetic field simulated, and obtaining the moment domain waveform diagram of the electric field in the simulation region.

Electromagnetic field simulation method based on face-centered cubic and subgrid technique

Growing community of inventors

Hefei, China

Ke Xu