Aac Acoustic Technologies (shenzhen) Co., Ltd.

Aac Technologies (nanjing) Co., Ltd.

Shanghai United Imaging Healthcare Co., Ltd.

Ke Wu

Chao Wang

Lirong Zhang

Shuai Yang

Zhiqiang Zhuang

Hui Zhang

Shiyang Cheng

Xu Wang

The present invention provides a piezoelectric film acoustic resonator, which comprises a substrate, a first electrode disposed over the substrate, a piezoelectric film disposed over the substrate and covering at least a portion of the first electrode and a second electrode disposed on a surface of the piezoelectric film away from the first electrode, one end of the first electrode extends in the direction away from the piezoelectric film to form a first extended pad, one end of the second electrode extends in the direction away from the first extended pad to form a second extended pad, the first extended pad comprises a first protruding reflection grating on the surface away from the substrate, the second extended pad comprises a second protruding reflection grating on the surface away from the substrate. The configuration can reduce the impact on acoustic performance while improving the quality factor.

Piezoelectric film acoustic resonator

The present disclosure provides a piezoelectric resonator comprising a substrate having an acoustic reflection mirror, a bottom electrode stacked on the substrate, a piezoelectric layer disposed on the substrate and covering the bottom electrode, and a top electrode stacked on a surface of piezoelectric layer distal to the bottom electrode. An overlapping portion of the acoustic reflection mirror, the bottom electrode, the piezoelectric layer, and the top electrode along a thickness direction of the piezoelectric resonator is a resonance region. A sidewall of the top electrode or a bottom electrode recesses to form a recessing portion. The recessing portion does not extend to an upper surface or a lower surface of the top electrode or the bottom electrode.

Piezoelectric resonator

A resonator includes a silicon substrate, a bottom electrode stacked on a portion of the silicon substrate, a piezoelectric layer covering the bottom electrode and another portion of the silicon substrate, a top electrode stacked on the piezoelectric layer, and a Bragg reflecting ring. The Bragg reflecting ring is formed on a side of the piezoelectric layer connected to the top electrode and surrounds the top electrode. The Bragg reflecting ring includes a Bragg high-resistivity layer and a Bragg low-resistivity layer alternately arranged along the radial direction of the Bragg reflecting ring. An acoustic impedance of the Bragg high-resistivity layer is greater than an acoustic impedance of the Bragg low-resistivity layer. The Bragg reflecting ring forms reflection surfaces to reflect the laterally propagating clutter waves, thereby suppressing the parasitic mode in the working frequency band, improving the frequency response curve of the resonator and the overall performance of the resonator.

Resonator and method for manufacturing the same

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Shenzhen, China

Ke Wu