Chengdu Pbm Technology Ltd.

Ke Wang

Jack Zezhong Peng

The present disclosure provides a high-density three-dimensional multilayer memory and a fabrication method, and relates to the preparation technology of memories. The memory comprises an underlying circuit part and a basic structure body disposed above the underlying circuit part, wherein the basic structure body is divided into two independent interdigitated structures by a curve-shaped division groove, at least three memory cell holes are formed in the curve-shaped division groove side by side, a vertical electrode is disposed in each memory cell hole, and the memory medium is an insulating medium; and a buffer region is placed on the inner wall of the memory cell hole and at the position of a first conducting medium layer, the buffer region protrudes from the inner wall of the memory cell hole to the central axis of the memory cell hole, and the buffer region is connected to the memory medium.

High-density three-dimensional multilayer memory and fabrication method

The present disclosure provides a method for manufacturing a fully self-aligned high-density 3D multi-layer memory, which relates to the technical field of memory manufacturing. The method includes the following steps: 1) forming a base structure; 2) grooving the base structure; 3) filling an insulating medium in the division groove; 4) deep-hole etching the insulating medium in step 3 to form memory cell holes discretely arranged along the division groove, where the insulating medium is present between adjacent memory cell holes, and conductive medium layers and insulating medium layers of the base structure are exposed in the memory cell holes; and 5) disposing various layers of medium required by a preset memory structure layer by layer onto the inner walls of the memory cell holes. The semiconductor memory manufactured according to the present disclosure has high storage density.

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Chengdu, China

Ke Wang