Hon Hai Precision Industry Co., Ltd.

Tsinghua University

Ke-Nan Zhang

Shou-Shan Fan

Yang Wu

Shu-Yun Zhou

Ming-Zhe Yan

The disclosure relates to a semimetal compound of Pt and a method for making the same. The semimetal compound is a single crystal material of PtSe. The method comprises: providing a PtSepolycrystalline material; placing the PtSepolycrystalline material in a reacting chamber; placing chemical transport medium in the reacting chamber; evacuating the reacting chamber to be vacuum less than 10 Pa; placing the reacting chamber at a temperature gradient, wherein the reacting chamber has a first end at a temperature of 1200 degrees Celsius to 1000 degrees Celsius and a second end opposite to the first end and at a temperature of 1000 degrees Celsius to 900 degrees Celsius; and keeping the reacting chamber in the temperature gradient for 10 days to 30 days.

Semimetal compound of Pt

The disclosure relates to a method for making semimetal compound of Pt. The semimetal compound is a single crystal material of PtSe. The method comprises: placing pure Pt and pure Se in a reacting chamber as reacting materials; evacuating the reacting chamber to be vacuum less than 10 Pa; heating the reacting chamber to a first temperature of 600 degrees Celsius to 800 degrees Celsius and keeping for 24 hours to 100 hours; cooling the reacting chamber to a second temperature of 400 degrees Celsius to 500 degrees Celsius at a cooling rate of 1 degrees Celsius per hour to 10 degrees Celsius per hour and keeping for 24 hours to 100 hours to obtain a crystal material of PtSe; and separating the excessive reacting materials from the crystal material of PtSe.

Method for making semimetal compound of Pt

Semimetal compound of Pt and method for making the same

The disclosure relates to a method for making semimetal compound of Pt. The semimetal compound is a single crystal material of PtSe. The method comprises: placing pure Pt and pure Se in a reacting chamber as reacting materials; evacuating the reacting chamber to be vacuum less than 10 Pa; heating the reacting chamber to a first temperature of 600 degrees Celsius to 800 degrees Celsius and keeping for 24 hours to 100 hours; cooling the reacting chamber to a second temperature of 400 degrees Celsius to 500 degrees Celsius and keeping for 24 hours to 100 hours at a cooling rate of 1 degrees Celsius per hour to 10 degrees Celsius per hour to obtain a crystal material of PtSe; and separating the excessive reacting materials from the crystal material of PtSe.

The disclosure relates to a method for making semimetal compound of Pt. The semimetal compound is a single crystal material of PtTe. The method comprises: placing pure Pt and pure Te in a reacting chamber as reacting materials; evacuating the reacting chamber to be vacuum less than 10 Pa; heating the reacting chamber to a first temperature from 600 degree Celsius to 800 degree Celsius and keeping for 24 hours to 100 hours; cooling the reacting chamber to a second temperature from 400 degree Celsius to 500 degree Celsius and keeping for 24 hours to 100 hours at a cooling rate from 1 degree Celsius per hour to 10 degree Celsius per hour to obtain a crystal material of PtTe; and separating the excessive reacting materials from the crystal material of PtTe.

Method for making a semimetal compound of Pt by reacting elements Pt and Te

The disclosure relates to a semimetal compound of Pt and a method for making the same. The semimetal compound is a single crystal material of PtTe. The method comprises: providing a PtTepolycrystalline material; placing the PtTepolycrystalline material in a reacting chamber; placing chemical transport medium in the reacting chamber; evacuating the reacting chamber to be vacuum less than 10 Pa; placing the reacting chamber in a temperature gradient, wherein the reacting chamber has a first end in a temperature from 1200 degree Celsius to 1000 degree Celsius and a second end opposite to the first end and in a temperature from 1000 degree Celsius to 900 degree Celsius; and keeping the reacting chamber in the temperature gradient for 10 days to 30 days.

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Beijing, China

Ke-Nan Zhang