Applied Materials, Inc.

General Electric Company

Steag Hamatech Ag

Ske Technology Corp.

Ke Ling Lee

Shinichi Kurita

Ken Lee

Emanuel Beer

Fred Charles Nopwaskey

Robert Martinson

Mikhail Mazur

Alfred Wilhelm Dalcher

Wendell T Blonigan

Arnold Kholodenko

Efrain Quiles

Mingwei Jiang

Maya Shendon

Robert M Martinson

The method includes repairing a nuclear reactor, where the reactor includes one or more submerged lines welded to one or more support brackets. The method involves removing a damaged section of the one or more submerged lines, and replacing the damaged section without welding.

Method and apparatuses for operating and repairing nuclear reactors

Method of repairing nuclear reactors that include one or more submerged lines welded to one or more support brackets may include: removing a damaged section of one of the one or more submerged lines; and replacing the damaged section of the one of the one or more submerged lines without welding. Methods of operating nuclear reactors that include one or more submerged lines welded to one or more support brackets may include: shutting down the nuclear reactor; repairing damage to at least one of the one or more submerged lines without welding; and starting up the nuclear reactor. Methods of operating nuclear reactors that include one or more submerged lines welded to one or more support brackets may include: cooling down the nuclear reactor; repairing damage to at least one of the one or more submerged lines without welding; and heating up the nuclear reactor.

Methods and apparatuses for operating and repairing nuclear reactors

Methods and apparatus for grounding a chamber isolation valve for a processing system are provided. In one embodiment, a grounded chamber isolation valve for a plasma processing system is described. The chamber isolation valve includes a door and a bracing member movably attached to and opposing the door, and at least one electrically conductive member in electrical communication with the door, the at least one electrically conductive member comprising one or more reaction bumpers disposed on the bracing member that are adapted to contact at least one grounded component of the plasma processing system when the door is in the closed position.

Chamber isolation valve RF grounding

A method and apparatus for grounding a chamber isolation valve are provided. Generally, the method makes use of an electrically conductive elastomeric member or members to effectively ground a chamber isolation valve and/or isolation valve door while avoiding metal-to-metal contact between moving parts in the processing system. In one embodiment, the elastomeric member is attached to and in electrical communication with the door of the chamber isolation valve. The elastomeric member is brought into contact with a grounded component of the plasma processing system when the door is in the closed position. In another embodiment, the conductive elastomeric member is attached to a bracing member of the isolation valve and is brought into contact with a grounded component of the plasma processing system when the bracing member is deployed to hold the isolation valve door in place during substrate processing. Other configurations are also provided.

In one embodiment, a slit valve is provided that is adapted to seal an opening and that includes a valve housing having a first wall, a first opening formed in the first wall, a second wall and a second opening formed in the second wall. The slit valve also includes a closure member having a sealing portion adapted to contact the second wall and seal the second opening, and a bracing member moveable relative to the sealing portion and adapted to contact the first wall. The slit valve further includes at least one actuating mechanism adapted to (1) move the sealing portion toward the second wall and into contact with the second wall; and (2) move the bracing member away from the sealing portion and into contact with the first wall so as to brace the sealing portion against the second wall. Numerous other aspects are provided.

Methods and apparatus for sealing an opening of a processing chamber

A plasma sputtering system that may be used to deposit a film on a substrate such as an optical disk is disclosed. In one embodiment, the sputtering system includes a main vacuum chamber. A plurality of sputtering chambers and a load lock chamber are connected to the main vacuum chamber. An assembly of a horizontal unprocessed substrate, an inner mask, and an outer mask are pressed onto a substrate transport tray that is positioned in the load lock. The tray supports the substrate and the masks throughout the processing of the substrate. A vertical lift lowers the tray from the load lock onto a carousel. The carousel transports the tray, substrate and masks to the sputtering chambers and then back to the load lock for unloading. Other lifts raise the tray, processed substrate, and masks from the carousel to the sputtering chambers. The tray is selectively pressed against the lower access aperture of the load lock and sputtering chambers so as to isolated them from the main chamber. After processing is complete, the lift pedestal at the load lock raises the tray and the substrate and masks thereon from the carousel to the load lock, whereupon the substrate and masks are removed from the sputtering system.

Horizontal sputtering system

A plasma sputtering system is described. A substrate handling system thereof places an unprocessed substrate (e.g., an optical disk), an inner mask, and an outer mask onto a tray in a loadlock of the sputtering system, and then seals the access opening to the loadlock. The substrate and the masks are moved on the tray to a sputtering chamber where the substrate is sputter coated. The substrate handing system removes the processec substrate and accompanying inner and outer masks from the tray in the loadlock to an external substrate change station, where the processed substrate is removed from the masks, which are still gripped by the substrate handling system. Another unprocessed disk is placed on the inner mask and within the outer mask, and the sequence repeats. The substrate handling system only contacts the masks on surfaces thereof that are not subjected to direct sputter deposition.

System and method for transporting and sputter coating a substrate in a sputter deposition system

A substrate handling system auxiliary to a plasma sputtering system is described. The substrate handling system inserts an unprocessed substrate (e.g., an optical disk), an inner mask, and an outer mask into a loadlock of the sputtering system, and then seals the access opening to the loadlock. The substrate and the masks then are moved to a sputtering chamber where the substrate is coated by sputtering. Subsequently, the substrate handling system moves a processed substrate, and its accompanying inner mask and an outer mask, from the loadlock to an external disk change station, where the processed substrate is removed from the masks, which are still gripped by the substrate handling system. Subsequently, another unprocessed disk is placed on the inner mask and within the outer mask, and the sequence repeats. The substrate handling system only contacts the masks on surfaces thereof that are not subjected to direct sputter deposition, so that the masks can be gripped without causing particulate contamination. A coated surface of the inner mask and outer mask has numerous asperities to trap sputtered material and reduce contamination.

System and method for handling and masking a substrate in a sputter deposition system

A temperature control system 10 is used to control the temperature of a chamber surface 15, such as a convoluted external surface, of a process chamber 25 that is used to process a semiconductor substrate 30. The temperature control system 10 comprises a vapor chamber 100 that forms an enclosure adjoining or surrounding the process chamber surface 15. A fluid distributor 115 in the vapor chamber 100 applies a fluid film 130 onto the process chamber surface 15. Vaporization of the fluid film 130 from the chamber surface 15 controls the temperature of the chamber surface. Optionally, a vent 165 in the vapor chamber 100 can be used to adjust the vaporization temperature of the fluid in the vapor chamber.

Growing community of inventors

Cupertino, CA, United States of America

Ke Ling Lee