The Furukawa Electric Co., Ltd.

Fuji Electric Co., Ltd.

Kazuyuki Umeno

Keishi Takaki

Tatsuyuki Shinagawa

Ryosuke Tamura

Masayuki Iwami

Jiang Li

Takuya Kokawa

Sadahiro Kato

Yutaka Ohki

Hirotatsu Ishii

Shusuke Kaya

Tomomichi Yasuoka

Ryuichiro Minato

Jun Terada

Toshiaki Sakai

Shinya Ootomo

Ryohei Makino

Daeyoul Yoon

Sayo Suga

Nobuyasu Matsumoto

Shinya Otomo

Masamitsu Kaneko

Fumika Nishino

A welding method includes: irradiating a plurality of metal foils stacked on a first surface of a metal member in a first direction with laser light to weld the metal member and the plurality of metal foils to each other, the laser light including first laser light having a wavelength of 800 [nm] or more and 1200 [nm] or less and second laser light having a wavelength of 550 [nm] or less, a second surface of a metal foil farthest from the metal member in the first direction among the plurality of metal foils, on a side opposite to the metal member, being irradiated with the laser light.

Welding method, welding device, metal stacked body, electrical component, and electrical product

A semiconductor laser device includes a semiconductor layer portion having an active layer and performs multi-mode oscillation of laser light. Further, the semiconductor layer portion includes first and second regions, the second region being located closer to a facet on a laser light radiation side than the first region, the first region and the second region include a stripe region in which the laser light is guided, and an optical confinement effect of the laser light to the stripe region in a horizontal direction in the second region is less than that in the first region.

Semiconductor laser device and laser light irradiation apparatus

A nitride semiconductor device includes; a semiconductor stack configured with a plurality of semiconductor layers made of nitride semiconductors provided on a base having a conductive portion; a first electrode provided on a portion of a semiconductor layer of the semiconductor layers configuring the semiconductor stack; a second electrode provided on a portion of a semiconductor layer of the semiconductor layers configuring the semiconductor stack separately from the first electrode; a first wiring provided at an upper layer of the first electrode; and a second wiring provided at an upper layer of the second electrode. A low permittivity area being a portion of which permittivity is lower than permittivities of the nitride semiconductors configuring the semiconductor stack at a lower layer of a portion of at least one of the first electrode and the second electrode other than a portion being junctioned with the semiconductor stack electrically.

Nitride semiconductor device, production method thereof, diode, and field effect transistor

A semiconductor multi-layer substrate includes a substrate made of Si and a multi-layer semiconductor layer. The multi-layer semiconductor layer includes an active layer made of a nitride semiconductor, a first warp control layer being formed between the substrate and the active layer and giving a predetermined warp to the substrate, and a second warp control layer made of a nitride semiconductor of which amount of an increase in a warp per a unit thickness is smaller than an amount of increase in the warp per a unit thickness of the first warp control layer. A total thickness of the multi-layer semiconductor layer is equal to or larger than 4 &#x3bc;m.

Semiconductor multi-layer substrate, semiconductor device, and method for manufacturing the same

A semiconductor multi-layer substrate includes a substrate, a buffer layer formed on the substrate and made of a nitride semiconductor, an electric-field control layer formed on the buffer layer and made of a nitride semiconductor, the electric-field control layer having conductivity in the substrate's lateral direction, an electric-field relaxation layer formed on the electric-field control layer and made of a nitride semiconductor, and an active layer formed on the electric-field relaxation layer and made of an nitride semiconductor. A resistance in the substrate's lateral direction of the electric-field control layer is equal to or smaller than 10 times a resistance of the electric-field relaxation layer, and a ratio of an electric field share between the electric-field relaxation layer and the buffer layer is controlled by a ratio between a thickness of the electric-field relaxation layer and a thickness of the buffer layer.

Semiconductor multi-layer substrate and semiconductor element

A nitride compound semiconductor device includes: a substrate; a buffer layer formed on the substrate and including a plurality of composite layers each layered of: a first layer formed of a nitride compound semiconductor; and a second layer formed of a nitride compound semiconductor containing aluminum and having a lattice constant smaller than a lattice constant of the first layer; a semiconductor operating layer formed on the buffer layer; and a plurality of electrodes formed on the semiconductor operating layer. At least one of the second layers has oxygen added therein.

Nitride compound semiconductor device and manufacturing method thereof

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Tokyo, Japan

Kazuyuki Umeno