Hitachi, Ltd.

Other

Kazuyuki Suko

Masayuki Kojima

Yoshiaki Sato

Hironobu Kawahara

Kazuo Nojiri

Takashi Yamada

Ryooji Fukuyama

Yoshimi Torii

Michimasa Hunabashi

Keizo Kuroiwa

Yoshinao Kawasaki

Koichiro Ishibashi

Shuji Ikeda

Toshiaki Yamanaka

Satoshi Meguro

Naotaka Hashimoto

Fumio Murai

Atsuyoshi Koike

Takashi Yunogami

Hirohiko Yamamoto

Sadayuki Morita

Takao Kumihashi

Kyoichiro Asayama

Tadanori Yoshida

Fumiyuki Kanai

Maki Shimoda

Yasuo Kiguchi

Ryouichi Furukawa

Shunji Sasabe

Masayuki Ishizaka

Toshiro Aoto

Koichi Saitoh

Masayuki Hiranuma

Eri Fujita

Jun Abe

Disclosed is apparatus for treating samples, and a method of using the apparatus. The apparatus includes processing apparatus (a) for treating the samples (e.g., plasma etching apparatus), (b) for removing residual corrosive compounds formed by the sample treatment, (c) for wet-processing of the samples and (d) for dry-processing the samples. A plurality of wet-processing treatments of a sample can be performed. The wet-processing apparatus can include a plurality of wet-processing stations. The samples can either be passed in series through the plurality of wet-processing stations, or can be passed in parallel through the wet-processing stations.

Method and apparatus for processing samples

Conductive layers are formed in the trenches made in an insulating film in the following manner. First, an amorphous silicon film A is deposited in the trenches made in a silicon oxide film . A photoresist film is then formed on the amorphous silicon film A by means of spin coating. Then, exposure light is applied to the entire surface of the photoresist film , thereby exposing to light those parts of the photoresist film which lie outside the trenches . The other parts of the photoresist film , which lie in the trenches are not exposed to light because the light reaching them is inadequate. Further, the photoresist film is developed thereby removing those parts of the film which lie outside the trenches and which have been exposed to light. Thereafter, those parts of the amorphous silicon film A, which lie outside the trenches , are removed by means of dry etching using, as a mask, the unexposed parts of the photoresist film which remain in the trenches

Method of forming a data-storing capacitive element made in an insulating film on a semiconductor substrate

Apparatus for processing samples

A static random access memory comprising memory cells each composed of transfer MISFETs controlled by word lines and of a flip-flop circuit made of driver MISFETs and load MISFETs. The top of the load MISFETs is covered with supply voltage lines so that capacitor elements of a stacked structure are formed between the gate electrodes of the load MISFETs and the supply voltage lines.

Semiconductor integrated circuit device

In order that reaction products of low vapor pressure may be prevented from being deposited on the side wall of a predetermined pattern when this pattern is to be formed by dry-etching a Pt film or a PZT film, a resist mask having a rounded outer periphery at its head is used when the Pt film deposited on a semiconductor substrate is to be dry-etched. After this dry-etching, moreover, an overetching of a proper extent is performed to completely remove the side wall deposited film which is left on the side of the pattern. The resist mask is formed by exposing and developing a benzophenone novolak resist and subsequently by heating to set it while irradiating it, if necessary, with ultraviolet rays.

Process for manufacturing semiconductor integrated circuit device

Conductive layers are formed in the trenches made in an insulating film in the following manner. First, an amorphous silicon film A is deposited in the trenches made in a silicon oxide film A photoresist film is then formed on the amorphous silicon film A by means of spin coating. Then, exposure light is applied to the entire surface of the photoresist film thereby exposing to light those parts of the photoresist film 30 which lie outside the trenches The other parts of the photoresist film which lie in the trenches are not exposed to light because the light reaching them is inadequate. Further, the photoresist film is developed thereby removing those parts of the film which lie outside the trenches and which have been exposed to light. Thereafter, those parts of the amorphous silicon film A, which lie outside the trenches are removed by means of dry etching using, as a mask, the unexposed parts of the photoresist film which remain in the trenches

Method of forming conductive layers in the trenches or through holes made in an insulating film on a semiconductors substrate

Semiconductor memory device having driver and load MISFETs and capacitor elements

In order that reaction products of low vapor pressure may be prevented from being deposited on the side wall of a predetermined pattern when this pattern is to be formed by dry-etching a Pt film or a PZT film, a resist mask 54 having a rounded outer periphery at its head is used when the Pt film 53 deposited on a semiconductor substrate 50 is to be dry-etched. After this dry-etching, moreover, an overetching of a proper extent is performed to completely remove the side wall deposited film 55 which is left on the side of the pattern. The resist mask 54 is formed by exposing and developing a benzophenone novolak resist and subsequently by heating to set it while irradiating it, if necessary, with ultraviolet rays.

Apparatus for processing a sample having a metal laminate

Growing community of inventors

Tachikawa, Japan

Kazuyuki Suko