Mie Fujitsu Semiconductor Limited

United Semiconductor Japan Co., Ltd.

Kazuyuki Kumeno

Taiji Ema

Makoto Yasuda

Nobuhiro Misawa

A semiconductor device includes as a resistance element a first polycrystalline silicon and a second polycrystalline silicon containing impurities, such as boron, of the same kind and having different widths. The first polycrystalline silicon contains the impurities at a concentration C. The second polycrystalline silicon has a width larger than a width of the first polycrystalline silicon and contains the impurities of the same kind at a concentration Clower than the concentration C. A sign of a temperature coefficient of resistance (TCR) of the first polycrystalline silicon changes at the concentration C. A sign of a TCR of the second polycrystalline silicon changes at the concentration C.

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Kuwana, Japan

Kazuyuki Kumeno