Tokyo Electron Limited

Kazuyuki Kikuchi

Shinya Nasukawa

Tatsuya Yamaguchi

Tsuneyuki Okabe

Kohei Fukushima

Hirofumi Kaneko

Hiromi Nitadori

Kazuteru Obara

Yasuaki Kikuchi

Masato Kadobe

Ryuji Kusajima

A heat treatment apparatus includes: a processing container configured to accommodate and process a plurality of substrates in multiple tiers under a reduced-pressure environment; a first heater configured to heat the plurality of substrates accommodated in the processing container; a plurality of gas supply pipes configured to supply a gas to positions having different heights in the processing container; and a second heater provided on a gas supply pipe that supplies a gas to a lowermost position among the plurality of gas supply pipes, and configured to heat the gas in the gas supply pipe.

Heat treatment apparatus and film deposition method

A processing apparatus includes: a plurality of process modules concatenated with one another; and a loader module configured to receive a carrier accommodating a plurality of substrates to be processed by the plurality of process modules, wherein each of the plurality of process modules includes: a heat treatment unit including a processing container configured to accommodate the plurality of substrates and perform a heat treatment on the plurality of substrates; and a gas supply unit disposed on one side surface of the heat treatment unit and configured to supply a gas into the processing container.

Processing apparatus

A substrate processing apparatus includes: a process container configured to receive a substrate therein; a pressure detection part configured to measure an internal pressure of the process container; an exhaust-side valve installed in an exhaust pipe configured to exhaust an interior of the process container; a gas storage tank connected to the process container through a first gas supply pipe; a gas amount measuring part configured to measure an amount of gas stored in the gas storage tank; and a control valve installed in the first gas supply pipe and configured to control the internal pressure of the process container by changing an opening degree of the control valve based on the internal pressure of the process container which is detected by the pressure detection part and by controlling a flow path cross section through which the gas is supplied from the gas storage tank to the process container.

Substrate processing apparatus, gas supply method, substrate processing method, and film forming method

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Iwate, Japan

Kazuyuki Kikuchi