Hitachi Cable, Inc.

Tamura Corporation

Koha Co., Ltd.

Kazuyuki Iizuka

Masahiro Arai

Taichiroo Konno

Shinya Watanabe

Takekazu Masui

Hajime Fujikura

Kimiyoshi Koshi

Yoshikatsu Morishima

Shinkuro Sato

Akira Ito

Katsuya Akimoto

Masahiro Watanabe

Nobuaki Kitano

Daisuke Inomata

Masaru Takizawa

Akito Kuramata

Hiroyuki Sawano

Daiki Wakimoto

Yu Yamaoka

Takashi Furuya

Hiroaki Sano

Kentaro Tone

Mikihiko Uwani

Kei Doioka

Haruka Matsubara

A light emitting device includes a laser diode that emits a blue light, and a wavelength conversion part that absorbs a part of light emitted from the laser diode and converts a wavelength thereof. The wavelength conversion part includes a YAG-based single crystal phosphor. Irradiance of light emitted from the laser diode and irradiated on the wavelength conversion part is not less than 80 W/mm.

Light emitting device

Provided is a method for growing a &#x3b2;-GaO-based single crystal, whereby it becomes possible to grow a &#x3b2;-GaO-based single crystal having a small variation in crystal structure and also having a high quality in the direction of a b axis. In one embodiment, a method for growing a &#x3b2;-GaO-based single crystal includes growing a plate-shaped Sn doped &#x3b2;-GaO-based single crystal in the direction of the b axis using a seed crystal.

Method for growing &#x3b2;-GAO-based single crystal

A &#x3b2;-GaO-based single-crystal substrate includes a &#x3b2;-GaO-based single crystal, and a principal surface being a plane parallel to a b-axis of the &#x3b2;-GaO-based single crystal. A maximum value of &#x394;&#x3c9; on an arbitrary straight line on the principal surface that passes through a center of the principal surface is not more than 0.7264. The &#x394;&#x3c9; is a difference between a maximum value and a minimum value of values obtained by subtracting &#x3c9;from &#x3c9;at each of measurement positions, where &#x3c9;represents an angle defined by an X-ray incident direction and the principal surface at a peak position of an X-ray rocking curve on the straight line and &#x3c9;represents an angle on an approximated straight line obtained by using least-squares method to linearly approximate a curve representing a relationship between the &#x3c9;and the measurement positions thereof.

&#x3b2;-Ga2O3 single-crystal substrate

A method for growing a &#x3b2;-GaO-based single crystal, can provide a plate-shaped &#x3b2;-GaO-based single crystal having high crystal quality. In one embodiment, a method for growing a &#x3b2;-GaO-based single crystal employing an EFG method is provided, the method including: bringing a plate-shaped seed crystal into contact with a GaO-based melt, wherein the plate-shaped seed crystal includes a &#x3b2;-GaO-based single crystal having a defect density of not more than 5&#xd7;10/cmin the whole region; and pulling up the seed crystal to grow a &#x3b2;-GaO-based single crystal.

Method for growing B-Ga2O3-based single crystal

A method for manufacturing a semiconductor stacked body, and a semiconductor element including the semiconductor stacked body includes a semiconductor stacked body, including a GaOsubstrate having, as a principal plane, a plane on which oxygen atoms are arranged in a hexagonal lattice, an AlN buffer layer formed on the GaOsubstrate, and a nitride semiconductor layer formed on the AlN buffer layer.

Semiconductor stacked body, method for manufacturing same, and semiconductor element

Provided is a crystal layered structure having a low dislocation density on the upper surface of a nitride semiconductor layer on a GaOsubstrate, and a method for manufacturing the same. In one embodiment, there is provided a crystal layered structure including: a GaOsubstrate; a buffer layer comprising an AlGaInN (0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, 0&#x2266;z&#x2266;1, x+y+z=1) crystal on the GaOsubstrate; and a nitride semiconductor layer comprising an AlGaInN (0&#x2266;x&#x2266;1, 0&#x2266;y&#x2266;1, 0&#x2266;z&#x2266;1, x+y +z=1) crystal including oxygen as an impurity on the buffer layer. The oxygen concentration in a region having a thickness of no less than 200 nm on the nitride semiconductor layer on the side towards the GaOsubstrate is no less than 1.0&#xd7;10/cm.

Crystal layered structure and method for manufacturing same, and semiconductor element

A light emitting element includes a semiconductor laminated structure including a first semiconductor layer of first conductivity type, a second semiconductor layer of second conductivity type different from the first conductivity type, and an active layer sandwiched between the first semiconductor layer and the second semiconductor layer, a surface electrode including a center electrode disposed on one surface of the semiconductor laminated structure and a thin wire electrode extending from a periphery of the center electrode, and a contact part disposed on a part of another surface of the semiconductor laminated structure extruding a part located directly below the surface electrode, in parallel along the thin wire electrode, and including a plurality of first regions forming the shortest current pathway between the thin wire electrode and a second region allowing the plural first regions to be connected. The surface electrode has an arrangement that the shortest current pathway between the center electrode and the contact part is longer than the shortest current pathway between the thin wire electrode and the first region, and the shortest current pathway between an end part of the thin wire electrode and the contact part is not shorter than the shortest current pathway between the thin wire electrode and the first region.

Light emitting element including center electrode and thin wire electrode extending from periphery of the center electrode

A light-emitting element includes a semiconductor laminated structure including a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type different from the first conductivity type and an active layer sandwiched by the first and second semiconductor layers, a first electrode on one surface side of the semiconductor laminated structure, a conductive reflective layer on an other surface side of the semiconductor laminated structure for reflecting light emitted from the active layer, a contact portion partially formed between the semiconductor laminated structure and the conductive reflective layer and being in ohmic contact with the semiconductor laminated structure, and a second electrode on a part of a surface of the conductive reflective layer on the semiconductor laminated structure without contacting the semiconductor laminated structure for feeding current to the contact portion.

Light-emitting element

A semiconductor light emitting element includes a group III-V compound semiconductor layer, a first main surface and a second main surface, a reflection metal film formed on the second main surface, a front surface electrode formed on the first main surface, and an ohmic contact joint part formed between the reflection metal film and the group III-V compound semiconductor layer except a region directly under the front surface electrode. The ohmic contact joint part is disposed in a side of an outer peripheral part of the semiconductor light emitting element, formed so as to surround the front surface electrode when the ohmic contact joint part is viewed from a side of the front surface electrode, and disposed so that distance from each location of outer edge parts of the front surface electrode to the ohmic contact joint part nearest to the each location becomes equal to each other.

Semiconductor light emitting element

A semiconductor light-emitting device includes a support structure, and a light-emitting structure. The support structure includes a support substrate, and a support substrate side bonding layer disposed on one surface of the support substrate. The light-emitting structure includes a light-emitting structure side bonding layer bonded to the support substrate side bonding layer, a reflection region disposed on the support substrate side bonding layer opposite the support substrate, and a semiconductor multilayer structure including a light-emitting layer disposed on the reflection region opposite the light-emitting structure side bonding layer for emitting a light with a predetermined wavelength, and a light-extraction surface disposed on the light-emitting layer opposite the reflection region for reflecting diffusely the light. The reflection region includes a transparent layer of a material with a lower refractive index than that of the semiconductor multilayer structure, and a reflection layer of a metallic material. The transparent layer has such a thickness that interference caused by multiple reflection of light inputted to the transparent layer can be suppressed.

Semiconductor light-emitting device

A light emitting device includes a semiconductor multilayer structure having a first semiconductor layer of a first conductivity type, a second semiconductor layer of a second conductivity type, and an active layer. A reflecting layer is provided at a side of one surface of the semiconductor multilayer structure and reflects a light emitted from the active layer. A supporting substrate of Si or Ge is provided at an opposite side of the reflecting layer with respect to the side of the semiconductor multilayer structure and supports the semiconductor multilayer structure via a metal bonding layer. A back surface electrode is provided at an opposite side of the supporting substrate with respect to a side of the metal bonding layer and includes Au alloyed with the support substrate. A hardness of the back surface electrode is higher than a hardness of the Au.

Light emitting device and method for fabricating the same including a back surface electrode with an Au alloy

A plurality of semiconductor layers including an active layerand a light extract layer, and a reflective metal filmare formed in a semiconductor light emitting device. The light extract layeris formed of a plurality of layershaving different composition ratios. An irregularityis formed on the layersincluding an outermost layer to provide a main surface S as a rough-surface.

Semiconductor light emitting device

A semiconductor light-emitting device with a transparent conductive film has: a light-emitting portion formed on a semiconductor substrate, the light-emitting portion having an n-type clad layer, an active layer and a p-type clad layer; an As-based contact layer formed on the light-emitting portion, the contact layer being doped with a p-type dopant of 1&#xd7;10/cmor more; a current spreading layer formed on the contact layer, the current spreading layer being formed of a transparent conductive film made of a metal oxide material; and a buffer layer formed between the contact layer and the p-type clad layer. The buffer layer has two or more buffer layer parts, and the adjacent buffer layer parts are different each other in material or composition.

Semiconductor light-emitting device with transparent conductive film

A semiconductor light-emitting device having: a light-emitting portion formed on a semiconductor substrate, the light-emitting portion having an n-type clad layer, an active layer and a p-type clad layer; an As-based contact layer formed on the light-emitting portion, the contact layer being doped with a p-type dopant of 1&#xd7;10/cmor more; a current spreading layer formed on the contact layer, the current spreading layer being formed of a transparent conductive film of a metal oxide material; and a buffer layer formed between the contact layer and the p-type clad layer or formed being inserted inside of the p-type clad layer. The buffer layer is of an undoped group III/V semiconductor, and the group III/V semiconductor is of a group V element having P (phosphorus) as a main component thereof.

A semiconductor light-emitting device has a semiconductor substrate, an n-type cladding layer, an active layer, a p-type cladding layer, a p-type buffer layer, a p-type contact layer, and a current spreading layer. A part or all of the p-type buffer layer has a low Mg concentration buffer layer with a Mg concentration of 3.0&#xd7;10/cmor less and a film thickness of 50 nm or more.

Growing community of inventors

Tsuchiura, Japan

Kazuyuki Iizuka