Nec Corporation

Kabushiki Kaisha Toshiba

Oki Data Corporation

Oki Electric Industry Co., Ltd.

Elpida Memory, Inc.

Hitachi, Ltd.

The Tokyo Electric Power Company, Incorporated

Shin-etsu Polymer Co., Ltd.

Kazuyoshi Yoshida

Syuichiro Ogata

Hiroyuki Inoue

Yoshitatsu Okiyama

Hiroshi Itoh

Shuji Abe

Takashi Itaya

Kuniharu Hayashi

Toru Ishihara

Hidenobu Miyamoto

Kazuhiko Nagaoka

Masanori Maekawa

Makoto Shinohara

Noboru Otaki

Hiroyuki Yajima

Yuji Ono

Takeshi Tokunaga

Hiroshi Kikuchi

Daisuke Kobayashi

Jiro Tanuma

Minoru Isobe

Katsuyuki Ito

Yasushi Masahiro

Masato Sakai

Toshiyuki Kawaguchi

Hiroshi Fukuoka

Shuichi Fujikura

Hiroyuki Kudo

Yoshihiro Sano

Yoshitaka Miyazaki

Kunio Matsuzawa

Kazuki Obara

Eiichi Soda

Keizo Inagaki

Shuichiro Ogata

Eiji Ikawa

Yoshifumi Oura

Nobuyuki Ikezawa

Tailu c/o Shin-Etsu Polymer Co Ltd Ning

Rika c/o Shin-Etsu Polymer Co Ltd Abe

A method for manufacturing a semiconductor device, including: forming a first conductive layer on a first insulating film; forming a second insulating film so as to cover the first conductive layer; forming a resist mask on the second insulating film; forming a hole reaching the first conductive layer in the second insulating film by a first etching using the resist mask; removing the resist mask; removing the first conductive layer exposed at the bottom of the hole by a second etching, so that the hole reaches the first insulating film and the first conductive layer exposes at a side surface within the hole; forming a conductive plug in contact with the first conductive layer exposed at the side surface within the hole by burying a conductive material in the hole; and forming a second conductive layer to be connected to the conductive plug on the second insulating film.

Method for manufacturing semiconductor device having via plug

A method of manufacturing semiconductor devices includes: preparing a semiconductor substrate over which a laminated structure including an insulating layer is formed; forming over the insulating layer a resist mask including a first opening and a second opening which is greater in width than the first opening; first etching using the resist mask to form a hole which corresponds to the first opening and penetrates the insulating layer and to form a first trench which corresponds to the second opening and is shallower than the hole; forming a deposition film so as to fill the hole; second etching to etch back the deposition film so that the insulating layer is exposed in the first trench and that the deposition film remains in the hole; and third etching using the resist mask and the remaining deposition film for masking to remove the insulating layer part exposed in the first trench so as to form a second trench penetrating the insulating layer.

Method of manufacturing semiconductor devices

A method for fabricating a semiconductor device including the steps of: sequentially forming an oxide film and a polycrystalline silicon film overlying a substrate; and selectively dry-etching the polycrystalline silicon film in consecutive two processes including a main etching process for dry-etching the polycrystalline silicon film under existence of Cl , HBr and CF and an over-etching process for dry-etching the polycrystalline silicon film under existence of HBr and oxygen. In the process, the polycrystalline silicon film is etched in the main etching process with the excellent dimension controllability and is etched in the over etching process with the higher selective ratio between the polycrystalline silicon film and the gate oxide film.

Method of etching polycrystalline silicon film by using two consecutive dry-etching processes

An image recording apparatus includes a plurality of print engine aligned in a advance direction in which a transporting member transports a recording medium. A first one of the plurality of image-forming sections records a first detection pattern on the transporting member and a second one of the plurality of image-forming sections records a second detection pattern on the first detection pattern. A color shift detecting section detects the amount of color shift between the first and second ones of the print engines by measuring an intensity of light reflected by the first and second detection patterns. Based on the amount of color shift, a correcting section corrects a position of the image recorded on the recording medium. The detection pattern may be of different configurations, depending on the direction in which color shift occurs, i.e., traverse, advance, and oblique directions. The detection pattern includes a plurality of blocks aligned in a row, each of the plurality of blocks having at least one stripe.

Image recording apparatus in which a plurality of images of different colors are printed in registration

A double super tuner for receiving television signals from conventional broadcast, CATV, satellite broadcast, and HDTV. A first frequency converter converts an input high-frequency signal in a first intermediate frequency band signal based on a first local oscillator signal. The output of the first frequency converter is band-pass filtered by a dielectric filter. A second frequency converter converts the output of the dielectric filter into a second intermediate frequency band signal based on a second local oscillator signal.

Double super tuner

A method of forming a trench in a semiconductor substrate by gas plasma etching having the steps of detecting and analyzing emission spectrums of gas plasma etching products and controlling the gas plasma etching based on the ratio of the emission spectrums. The etching uses a HBr/O,gas. The ratio of emission spectrums is preferable from 1 to 2.

Etching method

In a semiconductor device manufacturing method, HBr gas (etching gas) is made plasma while the gas pressure thereof is kept to 2 mTorr or less, and ion elements of the plasma are accelerated under bias power of 150 W or more to etch a titanium silicide film 11. Thereafter, HBr gas is further made plasma while the gas pressure thereof is kept to 5 to 10 mTorr, and ion elements of the plasma are accelerated under bias power of 10 to 100 W to etch a polysilicon film 10 with the ion elements in the plasma.

Method of manufacturing semiconductor device

A method of forming an electrostatic latent image includes printing operation and toner recovering operation. The printing operation includes charging, forming an electrostatic latent image, developing, and transferring operations. The toner recovering operation includes the step of charging the photosensitive drum in timed relation to the rotation of the photosensitive drum after printing operation so that reversely charged toner deposited on the charging roller migrates from the charging roller to the photosensitive drum. The toner migrated from the charging roller to the photosensitive drum is recovered into a developer. An apparatus for forming an image includes a charging roller, photosensitive drum, developing roller, and transfer roller. The apparatus further includes a reversely-charged-toner recovering device which causes the photosensitive drum to be charged in timed relation to the rotation of the photosensitive drum after printing operation so that the reversely charged toner deposited on the charging roller migrates to the photosensitive drum. The developer recovers the toner which has migrated to the photosensitive drum from the charging roller.

Method and apparatus for forming an electrostatic latent image with

Disclosed herein is a method of manufacturing a semiconductor device, the method including a step of anisotropic-etching of a high-melting-point (or refractory) metal silicide layer by use of a halogen-containing gas using. This halogen-containing gas has a boron trichloride gas as a main component gas and either one of a chlorine gas or a hydrogen bromide gas as an auxiliary or a sub-component gas.

Method for selectively etching polycide layer

A method of forming an electrostatic latent image includes printing operation and toner recovering operation. the printing operation includes charging, forming an electrostatic latent image, developing, and transferring operations. The toner recovering operation includes the step of charging the photosensitive drum in timed relation to the rotation of the photosensitive drum after printing operation so that reversely charged toner deposited on the charging roller migrates from the charging roller to the photosensitive drum. The toner migrated from the charging roller to the photosensitive drum is recovered into a developer. An apparatus for forming an image includes a charging roller, photosensitive drum, developing roller, and transfer roller. The apparatus further includes a reversely-charged-toner recovering device which causes the photosensitive drum to be charged in timed relation to the rotation of the photosensitive drum after printing operation so that the reversely charged toner deposited on the charging roller migrates to the photosensitive drum. The developer recovers the toner which has migrated to the photosensitive drum from the charging roller.

An electrophotographic recording apparatus that removes reverse-charged toner that is charged with a polarity opposite to a polarity of a normal-charged toner. The apparatus includes a carrier belt; a transfer roller for carrying the toner adhering to the surface of the photosensitive body toward the carrier belt; a transfer power supply for applying to the transfer roller a first voltage that causes the normal-charged toner adhering to the surface of the photosensitive body to be transferred to the recording medium on the carrier belt, and a second voltage, of opposite polarity to the first voltage, that causes the reverse-charged toner adhering to the surface of the photosensitive body to be transferred to the carrier belt; and a carrier belt cleaning blade. A control circuit controls an operation of the transfer power supply, whereby the first voltage is applied to the transfer roller during an image-forming stage, and the second voltage is applied to the transfer roller during a reverse-charged toner removing stage. For example, the normal-charged toner may have a negative polarity, the reverse-charged toner may have a positive polarity, the first voltage may be positive, and the second voltage may be negative.

Electrophotographic recording apparatus having reverse-charged toner

Disclosed herein is a plasma processing apparatus having a dielectric member through which electromagnetic-waves are introduced into the reaction vessel to excite a plasma therein. A metallic resistor plate 3 is buried in the dielectric member to reduce capacitive coupling components in the plasma and to function as the electromagnetic-wave transmitting and heating member. The metallic resistor plate 3 is provided with a DC power supply 5 and a current controller 7 for feeding a controlled direct current to the metallic ressitor plate so as to elevate and control the temperature of the dielectric member 2. Sputtering of the dielectric member is prevented by the reduction of the capacitive coupling component, while deposition of etching products on the dielectric is suppressed by the controlled heating of the dielectric, thereby alleviating the problem of contaminating particle generation and increasing etching condition stability.

Plasma processing apparatus for dry etching of semiconductor wafers

A color printer has multiple printing heads that print dots in different colors, one dot line at a time. Each line is divided into at least two parts. For each printing head, the printer has an image data memory that stores data for at least two dot lines. When a printing head prints one dot line, data for each part of the dot line are taken from an independently-selected line in the image data memory. The image lines are selected so as to correct positional skew between different printing heads.

Color printer and printing method with improved color registration

A plasma processing apparatus comprises a reaction chamber to hold a high-density plasma and having a dielectric plate window, a spiral coil placed outside the reaction chamber and close to the dielectric window, and a lower electrode which holds a wafer to be processed in place and installed in the reaction chamber facing the dielectric plate. A first radio frequency current supply to the coil, a mechanism for varying the distance between the coil and the dielectric plate window, and a second radio frequency voltage supply to the lower electrode is provided. Excellent uniformity of the ion current density of the plasma and hence etching rate is achieved by making the thickness of a central part of the dielectric plate window thicker than its peripheral parts. Also, the uniformity of the plasma and the etching rate is achieved by making the induction field produced by the coil axially symmetrical about the axial center of the reaction chamber. The etching profile and the material etching selectivity are controlled by moving the coil in the axial direction of the coil.

Plasma processing apparatus for manufacture of semiconductor devices

Growing community of inventors

Tokyo, Japan

Kazuyoshi Yoshida